Patents by Inventor Li-Hsing Chang

Li-Hsing Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240136226
    Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.
    Type: Application
    Filed: January 2, 2024
    Publication date: April 25, 2024
    Inventors: Li-Wei CHU, Ying-Chi SU, Yu-Kai CHEN, Wei-Yip LOH, Hung-Hsu CHEN, Chih-Wei CHANG, Ming-Hsing TSAI
  • Patent number: 11915976
    Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.
    Type: Grant
    Filed: June 27, 2022
    Date of Patent: February 27, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Li-Wei Chu, Ying-Chi Su, Yu-Kai Chen, Wei-Yip Loh, Hung-Hsu Chen, Chih-Wei Chang, Ming-Hsing Tsai
  • Patent number: 6662989
    Abstract: A trigger assembly for a staple gun includes a trigger with an activation member received therein and an adjusting member engaged with the trigger. A cam rod rotatable extends through the body of the staple gun, the passage at an end of the trigger and an eccentric hole in the adjusting member. The adjusting member has a lug which can be engaged with two of the positioning notches defined in the body of the staple gun. The activation plate and the trigger can be lowered or lifted by rotating the adjusting member, and this adjustment changes the relative positions between the activation member, the valve of the staple gun and the safety plate so as to have single shooting or auto shooting feature.
    Type: Grant
    Filed: December 27, 2002
    Date of Patent: December 16, 2003
    Assignee: Basso Industry Corp.
    Inventors: Li-Hsing Chang, Shin-Nan Chang
  • Patent number: D477760
    Type: Grant
    Filed: November 13, 2002
    Date of Patent: July 29, 2003
    Assignee: Basso Industry Corp.
    Inventor: Li-Hsing Chang