Abstract: A method for fabricating a semiconductor structure is provided. The method includes forming a semiconductor chip; providing a printed circuit board; and forming an adhesive layer between a connection surface of the semiconductor chip and the printed circuit board to bond the semiconductor chip with the printed circuit board. The semiconductor chip includes a plurality of cutting tracks intersected with each other to enclose an area having corner regions. The connection surface of the semiconductor chip includes a plurality of conductive bumps and a plurality of first openings are formed in each of the corner regions.

Abstract: Method for fabricating A packaging structure is provided. The packaging structure includes a base substrate including a solder pad body region and a trench region adjacent to and around the solder pad body region. The packaging structure includes a passivation layer on the base substrate and exposing the solder pad body region and the trench region. The packaging structure includes a main body solder pad on the solder pad body region of the base substrate, and one or more trenches on the trench region of the base substrate and between the passivation layer and the main body solder pad. The packaging structure includes a bonding conductive wire having one end connected to the main body solder pad.

Abstract: A method for fabricating a semiconductor structure is provided. The method includes forming a semiconductor chip; providing a printed circuit board; and forming an adhesive layer between a connection surface of the semiconductor chip and the printed circuit board to bond the semiconductor chip with the printed circuit board. The semiconductor chip includes a plurality of cutting tracks intersected with each other to enclose an area having corner regions. The connection surface of the semiconductor chip includes a plurality of conductive bumps and a plurality of first openings are formed in each of the corner regions.

Abstract: A method for fabricating a semiconductor structure includes forming a semiconductor chip. Forming the semiconductor chip includes providing a substrate, forming a connection layer on the substrate, and forming a first passivation layer on the substrate. The first passivation layer contains a plurality of first openings to expose the connection layer. Forming the semiconductor chip also includes forming a plurality of second openings and a plurality of third openings in the second passivation layer. Each second opening is formed in a first opening to expose the connection layer, and each third opening is formed outside of the plurality of first openings to expose the first passivation layer. Further, forming the semiconductor chip includes forming a conductive bump in each second opening.

Abstract: Method for fabricating A packaging structure is provided. The packaging structure includes a base substrate including a solder pad body region and a trench region adjacent to and around the solder pad body region. The packaging structure includes a passivation layer on the base substrate and exposing the solder pad body region and the trench region. The packaging structure includes a main body solder pad on the solder pad body region of the base substrate, and one or more trenches on the trench region of the base substrate and between the passivation layer and the main body solder pad. The packaging structure includes a bonding conductive wire having one end connected to the main body solder pad.

Abstract: A packaging structure and a method for fabricating the packaging structure are provided. The packaging structure includes a base substrate including a solder pad body region and a trench region adjacent to and around the solder pad body region. The packaging structure also includes a passivation layer on a surface of the base substrate and exposing the solder pad body region and the trench region. In addition, the packaging structure includes a main body solder pad on the solder pad body region of the base substrate, and one or more trenches on the trench region of the base substrate and between the passivation layer and the main body solder pad. Further, the packaging structure includes a bonding conductive wire having one end connected to the main body solder pad.

Abstract: A method for fabricating a semiconductor structure includes forming a semiconductor chip. Forming the semiconductor chip includes providing a substrate, forming a connection layer on the substrate, and forming a first passivation layer on the substrate. The first passivation layer contains a plurality of first openings to expose the connection layer. Forming the semiconductor chip also includes forming a plurality of second openings and a plurality of third openings in the second passivation layer. Each second opening is formed in a first opening to expose the connection layer, and each third opening is formed outside of the plurality of first openings to expose the first passivation layer. Further, forming the semiconductor chip includes forming a conductive bump in each second opening.

Abstract: A packaging structure and a method for fabricating the packaging structure are provided. The packaging structure includes a base substrate including a solder pad body region and a trench region adjacent to and around the solder pad body region. The packaging structure also includes a passivation layer on a surface of the base substrate and exposing the solder pad body region and the trench region. In addition, the packaging structure includes a main body solder pad on the solder pad body region of the base substrate, and one or more trenches on the trench region of the base substrate and between the passivation layer and the main body solder pad. Further, the packaging structure includes a bonding conductive wire having one end connected to the main body solder pad.

Abstract: The present invention at first prepares a penta-alkyl DTPA and then processes a regioselective hydrolysis over the penta-alkyl DTPA while using a metal ion as a catalyst to obtain a tetra-alkyl DTPA, where, by the above two steps, a monoreactive DTPA derivative is manufactured.

Abstract: A wafer transport system is provided including providing a wafer cassette having a slot, and placing a protection insert into the slot.

Abstract: A non-volatile memory module package capability of replacing, it may connected to a solid memory module, which includes a control unit, a system interface, and a first connector, the control unit may obtains external signals by the system interface, and then transmitted to this non-volatile memory module by the control unit to store or use the memory content. The package includes a substrate; a second connector is arranged on the substrate for inserting the first connector of the solid memory module; at least a non-volatile memory chip located on the substrate, and electrically connected the substrate and the second connector; at least a passive component is arranged on the substrate; and a compound resin is covered on the non-volatile memory chip and passive component.

Abstract: A solid memory module with extensible capacity includes at least a non-volatile memory module, each of which has at least a memory chip and a first connector, and at least a second connector, which electrically connects the first connector of the volatile memory module, at least a control unit and as a system interface. This control unit obtains external signals by this system interface and then transmits to this non-volatile memory module by the control unit to store or use the memory content.

Abstract: A solid memory module structure with extensible capacity includes at least a non-volatile memory module, each of which has at least a memory chip, a first connector, and a control unit. And A Solid memory module includes at least a second connector, which electrically connects the first connector of the volatile memory module, and a system interfac3. The control unit of the non-volatile memory module obtains external signals by this system interface and then transmits to this non-volatile memory module by the control unit to store or use the memory content.

Abstract: The present invention at first prepares a penta-alkyl DTPA and then processes a regioselective hydrolysis over the penta-alkyl DTPA while using a metal ion as a catalyst to obtain a tetra-alkyl DTPA, where, by the above two steps, a monoreactive DTPA derivative is manufactured.