Abstract: An electrostatic discharge (ESD) protection circuit with electrical overstress (EOS) and latch-up immunity has a main ESD circuit, a voltage detection circuit and an electrostatic driving circuit. The main ESD circuit is coupled between a first rail and a second rail and has a control end. The main ESD circuit is configured to establish an electrical connection between the first rail and the second rail based on a voltage of the control end. The voltage detection circuit is coupled between the first rail and the second rail for setting the voltage of the control end when a voltage of the first rail is greater than a limiting voltage. The electrostatic driving circuit is used to drive the main ESD circuit when an ESD phenomenon occurs.

Abstract: An electrostatic discharge (ESD) protection circuit with electrical overstress (EOS) and latch-up immunity has a main ESD circuit, a voltage detection circuit and an electrostatic driving circuit. The main ESD circuit is coupled between a first rail and a second rail and has a control end. The main ESD circuit is configured to establish an electrical connection between the first rail and the second rail based on a voltage of the control end. The voltage detection circuit is coupled between the first rail and the second rail for setting the voltage of the control end when a voltage of the first rail is greater than a limiting voltage. The electrostatic driving circuit is used to drive the main ESD circuit when an ESD phenomenon occurs.

Abstract: A method for arranging electronic elements is provided. The method is suitable for a set of N electronic elements in which N is an odd number. The set of N electronic elements include a first electronic element subset and a second electronic element subset. The electronic elements of the first electronic element subset are arranged according a first predetermined method and the electronic elements of the second electronic element subset are arranged according to a second predetermined method, wherein the second electronic element subset is adjacent to the first electronic element subset.

Abstract: A semiconductor structure is provided. The semiconductor structure comprises a substrate, a first metal-oxide-semiconductor (MOS), a second MOS, a first semiconductor region, and a second semiconductor region. The first and the second MOSs are formed on the substrate. The first semiconductor region is formed between the substrate and the first MOS. The second semiconductor region is formed between the substrate and the second MOS. The first semiconductor region and the second semiconductor region isolate the first MOS from the second MOS.

Abstract: A method for arranging electronic elements is provided. The method is suitable for a set of N electronic elements in which N is an odd number. The set of N electronic elements include a first electronic element subset and a second electronic element subset. The electronic elements of the first electronic element subset are arranged according a first predetermined method and the electronic elements of the second electronic element subset are arranged according to a second predetermined method, wherein the second electronic element subset is adjacent to the first electronic element subset.