Abstract: A new type of optical correlator performs motion detection or background clutter suppression and correlation simultaneously in a single photorefractive crystal, and is useful for moving target identification and tracking and for stationary clutter rejection. The correlation is of the VanderLugt type and the motion detection or background clutter suppression is based on the erasing property of photorefractive crystals.

Abstract: A time-multiplexed, optically-addressed, crossbar switch (38) is provided using a two-dimensional, optically-addressed, reflective spatial light modulator (O-SLM) (20). Since the optical addressing is time-multiplexed, only N addressing lines are required for an N.times.N crossbar, rather than the N.sup.2 lines needed in the prior art. This reduction in addressing lines makes possible the development of enormous crossbar switches, such as 100.times.100, for the first time. In addition, since data paths remain entirely in the optics domain, data speeds can reach the multi-gigabit level. In the switch, a row (40) of N inputs (42) at the "read" wavelength is spread over one axis of the O-SLM. The light is refocused along the other axis to an output array (48) of detectors (50), so that each input has the potential to talk to any one output. The O-SLM is normally off, i.e., non-reflective, so that the output is, in the absence of an input signal, zero.

Abstract: An improved AOTF-based imaging spectrometer that has ability to electronically set the bandpass wavelength of an AOTF to any desired value in its wide tuning range, provides significant observational flexibility. This allows observations to be tailored in real-time and enables the spectrometer to address a wide range of objectives and permits real-time modification of the observational parameters, such as in flight or in other situations in which only remote control is possible. Various improvements in optical architecture provide simplified magnification variability, improved image resolution and light throughput efficiency and reduced sensitivity to ambient light. A preferred embodiment employs a camera zoom lens as the input lens. A TeO.sub.2 AOTF and a relay lens are placed at selected distances behind the back focal plane of the input lens, respectively.

Abstract: Edge enhancement of an input image by four-wave mixing a first write beam with a second write beam in a photorefractive crystal, e.g., GaAs, achieved for VanderLugt optical correlation with an edge enhanced reference image by optimizing the power ratio of a second write beam to the first write beam, e.g., 70:1, and optimizing the power ratio of a read beam, which carries the reference image to the first write beam, e.g., 100:701. Liquid crystal TV panels are employed as spatial light modulators in order to change the input and reference images in real time.

Abstract: A method and apparatus for detecting and tracking moving objects in a noise environment cluttered with fast- and slow-moving objects and other time-varying background. A pair of phase conjugate light beams carrying the same spatial information commonly cancel each other out through an image subtraction process in a phase conjugate interferometer, wherein gratings are formed in a fast photorefractive phase conjugate mirror material. In the steady state, there is no output. When the optical path of one of the two phase conjugate beams is suddenly changed, the return beam loses its phase conjugate nature and the interferometer is out of balance, resulting in an observable output. The observable output lasts until the phase conjugate nature of the beam has recovered. The observable time of the output signal is roughly equal to the formation time of the grating.

Abstract: Optical processing using photorefractive GaAs and other compound semiconductor crystals (28) is achieved in a four-wave mixing configuration. Potential applications of optical processing include spatial light modulation, phase conjugation, correlation, convolution, edge enhancement, matrix multiplication, incoherent-to-coherent conversion, and many others. In particular embodiments, optical processing, matrix multiplication, and integrated semiconductor optical information processors are demonstrated. In the case of integration of semiconductors and optical information processors, a spatial light modulator (88) is fabricated on a surface of a compound semiconductor crystal to form an integrated device (86). The device uses the spatial light modulator to transfer electrical data into an optical form and then employs the photorefractive effect in the bulk for processing the data.

Abstract: Spatial light modulation (22) in a III-V single crystal (12), e.g., gallium arsenide, is achieved using the photorefractive effect. Polarization rotation created by beam coupling is utilized in one embodiment. In particular, information (16)on a control beam (14) incident on the crystal is transferred to an input beam (10), also incident on the crystal. An output beam (18) modulated in intensity is obtained by passing the polarization-modulated input beam through a polarizer (20).

Abstract: An infrared photodetector is formed of a heavily doped p-type Ge.sub.x Si.sub.1-x /Si superlattice in which x is pre-established during manufacture in the range 0 to 100 percent. A custom tailored photodetector that can differentiate among close wavelengths in the range of 2.7 to 50 microns is fabricated by appropriate selection of the alloy constituency value, x, to establish a specific wavelength at which photodetection cut-off will occur.

Abstract: Apparatus is provided which greatly reduces the intensity of bright portions of an image while only moderately reducing the brightness of dimmer portions of the image, to thereby compress the range of light intensities to facilitate detection of the image. The apparatus includes a light detector device formed by a chip of photorefractive material. A two-dimensional array of light beams from an object to be detected, passes through a beam splitter to form two arrays of light beams. The two arrays of light beams are directed at different angles against a surface of the chip of photorefractive material, the two arrays of light beams forming coincident images on the surface. One of the two-dimensional arrays of beams emerging from an opposite surface of the chip has a lower range of intensities, to facilitate detection of the object despite very bright spots on its image. The other array of light beams energing from the chip has a greater range of intensities than the unprocessed image of the object.

Abstract: An infrared photodetector is formed of a heavily doped p-type Ge.sub.x Si.sub.1-x /Si superlattice in which x is pre-established during manufacture in the range 0 to 100 percent. A custom tailored photodetector that can differentiate among close wavelengths in the range of 2.7 to 50 microns is fabricated by appropriate selection of the alloy constituency value, x, to establish a specific wavelength at which photodetection cut-off will occur.

Abstract: Front surface contact floating emitter solar cell "transistors" having a semiconductor body (n-type) and floating emitter sections (p-type) diffused or implanted in the front surface are provided with sections diffused or implanted in the front surface between the floating emitter sections, but isolated from the floating emitter sections, for use either as a base contact to the n-type semiconductor body, in which case the section is doped n.sup.+, or as a collector for the adjacent emitter sections, in which case the section is doped p.sup.+. In the first case, the structure is provided with p.sup.+ semiconductor material on the back to serve as a collector, and in the second case with n.sup.+ semiconductor material on the back to serve as a base contact. In either case, the semiconductor material on the back may be a starting substrate of suitably doped semiconductor material. In the case of the substrate being the collector, a groove is etched to isolate the collector junctions from saw damage on the edge.