Abstract: Microwave heating of debris collecting vanes within the source vessel of a lithography apparatus is used to accomplish uniform temperature distribution in order to reduce fall-on contamination and formation of clogs on the inner and outer surfaces of the vanes.

Abstract: A load-lock chamber with reduced particle contamination is disclosed. At least one movable particle shield is placed between the gate valve and a wafer location. Particles which can be generated due to contact between the gate valve door and its seat are blocked or inhibited by the particle shield from landing in the wafer location, reducing particle contamination. Methods for operating the load-lock chamber are also disclosed.

Abstract: A method of inspecting an extreme ultraviolet (EUV) radiation source includes, in an idle mode, inserting a borescope mounted on a fixture through a first opening into a chamber of the EUV radiation source. The borescope includes a connection cable attached at a first end to a camera. The EUV radiation source includes an excitation laser that generates a light beam that is configured to focus onto tin droplets to generate EUV radiation inside the chamber of the EUV radiation source. The method further includes extending the extendible section, in a direction toward the second opening of the EUV radiation source, to move the camera beyond the blocking shield, and acquiring one or more images from a region beyond the blocking shield. The method also includes analyzing the one or more acquired images to determine an amount of tin debris deposited inside the chamber of the EUV radiation source.

Abstract: A method and system for optimizing scan speed of a lithography scanner. A process design layout corresponding to a plurality of rows of fields to be formed on an associated wafer is received and a default machine constant of the lithography scanner is determined. Each of the plurality of rows is then identified corresponding to the received process design layout. A scan speed for each determined type of row and the determined default machine constant is then determined. The associated wafer is then processed utilizing the determined scan speed for each of the plurality of rows in accordance with the process design layout.

Abstract: An inspection system and inspection methods are provided. The inspection method includes steps of placing an specimen on a stage, wherein the stage comprises a plurality of first alignment marks; capturing a first image of the first alignment marks; determining a position drift between a current position of the stage and a reference position of the stage based on the first image; compensating for the position drift between the current position of the stage and the reference position of the stage; and performing an inspection operation on the specimen in response to the position drift being less than a first tolerance.

Abstract: A sensor cleaning method is provided. The method includes processing a semiconductor wafer in a chamber. The method further includes using a first sensor to detect a parameter in the chamber during the processing of the semiconductor wafer. The method also includes generating cleaning plasma by a probe positioned in the chamber, wherein a gas is supplied to a passage in the probe and is excited into cleaning plasma by electric power supplied by electrodes positioned next to the passage. In addition, the method includes discharging the cleaning plasma from the probe toward the first sensor to remove contaminations formed on the first sensor.

Abstract: Some implementations described herein provide techniques and apparatuses for inspecting interior surfaces of a vessel of a radiation source for an accumulation of a target material. An inspection tool, including a laser-scanning system and a motor system supported by an elongated supported member, may be inserted into the vessel to generate an accurate three-dimensional profile of the interior surfaces. Use of the inspection tool is efficient, with short setup and scan times that substantially reduce a duration associated with evaluating the interior surfaces of the vessel for the accumulation.

Abstract: A method for operating a reticle inspection system includes training an analysis model of the reticle inspection system with a machine learning process, generating a difference threshold based on the machine learning process, storing a reference image, and generating a scan image of a reticle with the reticle inspection system. The method includes generating a relative difference value by comparing the scan image to the reference image. The method includes, if the relative difference value is less than the difference threshold, determining that the reticle is not defective. The method includes, if the relative difference value is greater than the difference threshold, determining that the reticle is defective.

Abstract: A method of operating an excitation laser system includes measuring an operating power of a laser beam, determining whether the operating power is below a threshold power value, optically measuring a spectrum of light emitted from a gain medium of the laser beam to determine a composition of the gain medium, and adjusting the composition of the gain medium based on the optical measurement. An apparatus includes an optical emission spectrum meter configured to capture a spectrum of light emitted from a gain medium of a laser beam, and a gas supply unit configured to control a supply of gas to the gain medium based on a composition of the gain medium determined from the spectrum of light.

Abstract: A droplet generator for an extreme ultraviolet imaging tool includes a reservoir for a molten metal, and a nozzle having a first end connected to the reservoir and a second opposing end where molten metal droplets emerge from the nozzle. A gas inlet is connected to the nozzle, and an isolation valve is at the second end of the nozzle configured to seal the nozzle droplet generator from the ambient.

Abstract: An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a collector and a plurality of vibration sensors coupled to the collector. The vibration sensors generate sensor signals indicative of shockwaves from laser pulses and impacts from debris. The system utilizes the sensor signals to improve the quality of EUV light generation.

Abstract: The present disclosure is directed to a modularized vessel droplet generator assembly (MGDVA) including a droplet generator assembly (DGA). Under a normal operation, the liquid fuel moves along an operation pathway extending through the DGA to eject or discharge the liquid fuel (e.g., liquid tin) from a nozzle of the DGA into a vacuum chamber. The liquid fuel in the vacuum chamber is then exposed to a laser generating an extreme ultra-violet (EUV) light. Under a service operation, the operation pathway is closed and a service pathway extending through the DGA is opened. A gas is introduced into the service pathway forming a gas-liquid interface between the gas and the liquid fuel. The gas-liquid interface is driven to an isolation valve directly adjacent to the DGA. In other words, the gas pushes back the liquid fuel to the isolation valve. Once the gas-liquid interface reaches the isolation valve, the isolation valve is closed isolating the DGA from the liquid fuel.

Abstract: The present disclosure is directed to a modularized vessel droplet generator assembly (MGDVA) including a droplet generator assembly (DGA). Under a normal operation, the liquid fuel moves along an operation pathway extending through the DGA to eject or discharge the liquid fuel (e.g., liquid tin) from a nozzle of the DGA into a vacuum chamber. The liquid fuel in the vacuum chamber is then exposed to a laser generating an extreme ultra-violet (EUV) light. Under a service operation, the operation pathway is closed and a service pathway extending through the DGA is opened. A gas is introduced into the service pathway forming a gas-liquid interface between the gas and the liquid fuel. The gas-liquid interface is driven to an isolation valve directly adjacent to the DGA. In other words, the gas pushes back the liquid fuel to the isolation valve. Once the gas-liquid interface reaches the isolation valve, the isolation valve is closed isolating the DGA from the liquid fuel.

Abstract: Some implementations described herein provide an exposure tool and associated methods of operation in which a scanner control system generates a scanner route for an exposure recipe such that the distance traveled by a substrate stage of the exposure tool along the scanner route is reduced and/or optimized for non-exposure fields on a semiconductor substrate. In this way, the scanner control system increases the productivity of the exposure tool, reduces processing times of the exposure tool, and increases yield in a semiconductor fabrication facility in which the exposure tool is included.

Abstract: A method and system for optimizing scan speed of a lithography scanner. A process design layout corresponding to a plurality of rows of fields to be formed on an associated wafer is received and a default machine constant of the lithography scanner is determined. Each of the plurality of rows is then identified corresponding to the received process design layout. A scan speed for each determined type of row and the determined default machine constant is then determined. The associated wafer is then processed utilizing the determined scan speed for each of the plurality of rows in accordance with the process design layout.

Abstract: A method of manufacturing a semiconductor device includes conditioning a reflective surface of an extreme ultraviolet (EUV) mask, capturing an image of the conditioned reflective surface, performing a photolithography process using the mask, capturing another image of the reflective surface after the photolithography process, and comparing the images of the reflective surface. A system for EUV photolithography includes a conditioning unit, an inspection tool, an EUV exposure device, and a computing system programmed to control the conditioning unit, the inspection tool, and the EUV exposure device.

Abstract: Some implementations described herein incorporate a heating system to heat a cover of a bucket. A liquified target material, collected by vanes and/or a transport ring within a vessel of an extreme ultraviolet (EUV) radiation source, flows through a drain port of the transport ring and through a conduit that provides the liquified target material to the bucket through an opening of the cover. By heating the cover, the heating system prevents the liquified target material from solidifying at or near the opening before the liquified target material can flow into the bucket. By preventing the solidifying of the liquid target material, a likelihood of a blockage within the conduit and/or the drain port is reduced.

Abstract: A lithography system is provided capable of deterring contaminants, such as tin debris from entering into the scanner. The lithography system in accordance with various embodiments of the present disclosure includes a processor, an extreme ultraviolet light source, a scanner, and a hollow connection member. The light source includes a droplet generator for generating a droplet, a collector for reflecting extreme ultraviolet light into an intermediate focus point, and a light generator for generating pre-pulse light and main pulse light. The droplet generates the extreme ultraviolet light in response to the droplet being illuminated with the pre-pulse light and the main pulse light. The scanner includes a wafer stage. The hollow connection member includes an inlet that is in fluid communication with an exhaust pump. The hollow connection member provides a hollow space in which the intermediate focus point is disposed.

Abstract: Some implementations described herein provide a dual-feedback control system for laser beam targeting in a lithography system such as an EUV lithography system. In addition to using feedback from a high-frequency quad-cell sensor to adjust a target position of the pre-pulse laser beam based on a first portion of a phase of a wavefront of the pre-pulse laser beam, the dual-feedback control system uses feedback from a low-frequency camera sensor to adjust the target position of the pre-pulse laser beam based on a second portion of the phase of the wavefront.

Abstract: An EUV collector mirror for an extreme ultra violet (EUV) radiation source apparatus includes an EUV collector mirror body on which a reflective layer as a reflective surface is disposed, a heater attached to or embedded in the EUV collector mirror body and a drain structure to drain melted metal from the reflective surface of the EUV collector mirror body to a back side of the EUV collector mirror body.