Patents by Inventor Li-Jui Chen

Li-Jui Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12009177
    Abstract: A method includes applying a first voltage to a source of a first transistor of a detector unit of a semiconductor detector in a test wafer and applying a second voltage to a gate of the first transistor and a drain of a second transistor of the detector unit. The first transistor is coupled to the second transistor in series, and the first voltage is higher than the second voltage. A pre-exposure reading operation is performed to the detector unit. Light of an exposure apparatus is illuminated to a gate of the second transistor after applying the first and second voltages. A post-exposure reading operation is performed to the detector unit. Data of the pre-exposure reading operation is compared with the post-exposure reading operation. An intensity of the light is adjusted based on the compared data of the pre-exposure reading operation and the post-exposure reading operation.
    Type: Grant
    Filed: February 9, 2021
    Date of Patent: June 11, 2024
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITY
    Inventors: Ya-Chin King, Chrong-Jung Lin, Burn-Jeng Lin, Chien-Ping Wang, Shao-Hua Wang, Chun-Lin Chang, Li-Jui Chen
  • Patent number: 12007694
    Abstract: In an embodiment, a method includes: heating a byproduct transport ring of an extreme ultraviolet source, the byproduct transport ring disposed beneath vanes of the extreme ultraviolet source; after heating the byproduct transport ring for a first duration, heating the vanes; after heating the vanes, cooling the vanes; and after cooling the vanes for a second duration, cooling the byproduct transport ring.
    Type: Grant
    Filed: March 10, 2022
    Date of Patent: June 11, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Chun Yen, Chi Yang, Sheng-Kang Yu, Shang-Chieh Chien, Li-Jui Chen, Heng-Hsin Liu
  • Patent number: 11997778
    Abstract: A method includes following steps. A photoresist-coated substrate is received to an extreme ultraviolet (EUV) tool. An EUV radiation is directed from a radiation source onto the photoresist-coated substrate, wherein the EUV radiation is generated by an excitation laser hitting a plurality of target droplets ejected from a first droplet generator. The first droplet generator is replaced with a second droplet generator at a temperature not lower than about 150° C.
    Type: Grant
    Filed: December 9, 2022
    Date of Patent: May 28, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Yu Tu, Han-Lung Chang, Hsiao-Lun Chang, Li-Jui Chen, Po-Chung Cheng
  • Patent number: 11982944
    Abstract: A method of lithography process is provided. The method includes forming a conductive layer over a reticle. The method includes applying ionized particles to the reticle by a discharging device. The method includes forming a photoresist layer over a semiconductor substrate. The method includes securing the semiconductor substrate by a wafer electrostatic-clamp. The method also includes patterning the photoresist layer by emitting radiation from a radiation source via the reticle.
    Type: Grant
    Filed: May 31, 2023
    Date of Patent: May 14, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hsiao-Lun Chang, Chueh-Chi Kuo, Tsung-Yen Lee, Tzung-Chi Fu, Li-Jui Chen, Po-Chung Cheng, Che-Chang Hsu
  • Patent number: 11979971
    Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector mirror, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device, one or more coils for generating an inductively coupled plasma (ICP), a gas inlet for providing a source gas for the ICP, and a chamber enclosing at least the collector mirror and the rotatable debris collection device. The gas inlet and the one or more coils are configured such that the ICP is spaced apart from the collector mirror.
    Type: Grant
    Filed: April 10, 2019
    Date of Patent: May 7, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yen-Shuo Su, Chun-Lin Chang, Han-Lung Chang, Li-Jui Chen, Po-Chung Cheng
  • Publication number: 20240142878
    Abstract: Example implementations described herein include a laser source and associated methods of operation that can balance or reduce uneven beam profile problem and even improve plasma heating efficiency to enhance conversion efficiency and intensity for extreme ultraviolet radiation generation. The laser source described herein generates an auxiliary laser beam to augment a pre-pulse laser beam and/or a main-pulse laser beam, such that uneven beam profiles may be corrected and/or compensated. This may improve an intensity of the laser source and also improve an energy distribution from the laser source to a droplet of a target material, effective to increase an overall operating efficiency of the laser source.
    Type: Application
    Filed: January 10, 2024
    Publication date: May 2, 2024
    Inventors: Tai-Yu CHEN, Shang-Chieh CHIEN, Sheng-Kang YU, Li-Jui CHEN, Heng-Hsin LIU
  • Patent number: 11973302
    Abstract: The present disclosure provides a method for aligning a master oscillator power amplifier (MOPA) system. The method includes ramping up a pumping power input into a laser amplifier chain of the MOPA system until the pumping power input reaches an operational pumping power input level; adjusting a seed laser power output of a seed laser of the MOPA system until the seed laser power output is at a first level below an operational seed laser power output level; and performing a first optical alignment process to the MOPA system while the pumping power input is at the operational pumping power input level, the seed laser power output is at the first level, and the MOPA system reaches a steady operational thermal state.
    Type: Grant
    Filed: February 20, 2023
    Date of Patent: April 30, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Lin Louis Chang, Henry Tong Yee Shian, Alan Tu, Han-Lung Chang, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • Patent number: 11953839
    Abstract: In a method of cleaning a lithography system, during idle mode, a stream of air is directed, through a first opening, into a chamber of a wafer table of an EUV lithography system. One or more particles is extracted by the directed stream of air from surfaces of one or more wafer chucks in the chamber of the wafer table. The stream of air and the extracted one or more particle are drawn, through a second opening, out of the chamber of the wafer table.
    Type: Grant
    Filed: December 5, 2022
    Date of Patent: April 9, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shih-Yu Tu, Shao-Hua Wang, Yen-Hao Liu, Chueh-Chi Kuo, Li-Jui Chen, Heng-Hsin Liu
  • Patent number: 11956994
    Abstract: The present disclosure is generally related to 3D imaging capable OLED displays. A light field display comprises an array of 3D light field pixels, each of which comprises an array of corrugated OLED pixels, a metasurface layer disposed adjacent to the array of 3D light field pixels, and a plurality of median layers disposed between the metasurface layer and the corrugated OLED pixels. Each of the corrugated OLED pixels comprises primary or non-primary color subpixels, and produces a different view of an image through the median layers to the metasurface to form a 3D image. The corrugated OLED pixels combined with a cavity effect reduce a divergence of emitted light to enable effective beam direction manipulation by the metasurface. The metasurface having a higher refractive index and a smaller filling factor enables the deflection and direction of the emitted light from the corrugated OLED pixels to be well controlled.
    Type: Grant
    Filed: August 10, 2021
    Date of Patent: April 9, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Chung-Chih Wu, Hoang Yan Lin, Guo-Dong Su, Zih-Rou Cyue, Li-Yu Yu, Wei-Kai Lee, Guan-Yu Chen, Chung-Chia Chen, Wan-Yu Lin, Gang Yu, Byung-Sung Kwak, Robert Jan Visser, Chi-Jui Chang
  • Patent number: 11948702
    Abstract: A radiation source apparatus includes a vessel, a laser source, a collector, a horizontal obscuration bar, and a reflective mirror. The vessel has an exit aperture. The laser source is configured to emit a laser beam to excite a target material to form a plasma. The collector is disposed in the vessel and configured to collect a radiation emitted by the plasma and to reflect the collected radiation to the exit aperture of the vessel. The horizontal obscuration bar extends from a sidewall of the vessel at least to a position between the laser source and the exit aperture of the vessel. The reflective mirror is in the vessel and connected to the horizontal obscuration bar.
    Type: Grant
    Filed: May 5, 2023
    Date of Patent: April 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Wei-Chung Tu, Sheng-Kang Yu, Shang-Chieh Chien, Li-Jui Chen, Heng-Hsin Liu
  • Publication number: 20240103378
    Abstract: The present disclosure provides an extreme ultraviolet (EUV) lithography system including a radiation source and an EUV control system integrated with the radiation source. The EUV control system includes a 3-dimensional diagnostic module (3DDM) designed to collect a laser beam profile of a laser beam from the radiation source in a 3-dimensional (3D) mode, an analysis module designed to analyze the laser beam profile, a database designed to store the laser beam profile, and an EUV control module designed to adjust the radiation source. The analysis module is coupled with the database and the EUV control module. The database is coupled with the 3DDM and the analysis module. The EUV control module is coupled with the analysis module and the radiation source.
    Type: Application
    Filed: November 30, 2023
    Publication date: March 28, 2024
    Inventors: Tai-Yu CHEN, Tzu-Jung PAN, Kuan-Hung CHEN, Sheng-Kang YU, Shang-Chieh CHIEN, Li-Jui CHEN, Heng-Hsin LIU
  • Publication number: 20240085797
    Abstract: A method of controlling an extreme ultraviolet (EUV) lithography system is disclosed. The method includes irradiating a target droplet with EUV radiation, detecting EUV radiation reflected by the target droplet, determining aberration of the detected EUV radiation, determining a Zernike polynomial corresponding to the aberration, and performing a corrective action to reduce a shift in Zernike coefficients of the Zernike polynomial.
    Type: Application
    Filed: November 13, 2023
    Publication date: March 14, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ting-Ya CHENG, Han-Lung CHANG, Shi-Han SHANN, Li-Jui CHEN, Yen-Shuo SU
  • Patent number: 11906902
    Abstract: Example implementations described herein include a laser source and associated methods of operation that can balance or reduce uneven beam profile problem and even improve plasma heating efficiency to enhance conversion efficiency and intensity for extreme ultraviolet radiation generation. The laser source described herein generates an auxiliary laser beam to augment a pre-pulse laser beam and/or a main-pulse laser beam, such that uneven beam profiles may be corrected and/or compensated. This may improve an intensity of the laser source and also improve an energy distribution from the laser source to a droplet of a target material, effective to increase an overall operating efficiency of the laser source.
    Type: Grant
    Filed: March 21, 2022
    Date of Patent: February 20, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tai-Yu Chen, Shang-Chieh Chien, Sheng-Kang Yu, Li-Jui Chen, Heng-Hsin Liu
  • Publication number: 20240050993
    Abstract: A cleaning device for cleaning particles from a tool includes a nozzle structure having a spray opening to spray a cleaning liquid in a first direction to the tool, a cleaning pad disposed around the nozzle structure, and a support disposed around the cleaning pad. The cleaning pad exposes the spray opening and includes a front surface facing in the first direction to clean the tool. The support includes multiple gas openings to blow a pressurized gas in the first direction to the tool, and multiple vacuum openings to suck residual gas, liquid and particles around the tool. An air wall around the tool is thus generated by a combination of operations performed by the multiple gas openings and the multiple vacuum openings to reduce or prevent contamination that might be caused by the cleaning device in the chamber.
    Type: Application
    Filed: August 9, 2022
    Publication date: February 15, 2024
    Inventors: Yen-Hao LIU, Sung-Han TSAI, Chueh-Chi KUO, Li-Jui CHEN
  • Publication number: 20240045323
    Abstract: A pellicle assembly is provided for an associated reticle of an extreme ultraviolet (EUV) scanner. The pellicle assembly includes: a pellicle membrane; and a frame configured to mount the pellicle membrane to the associated reticle. Suitably, the pellicle membrane includes: a nanotube material layer; a first protective layer; a second protective layer; an infrared (IR) active layer arranged between the first protective layer and the second protective layer, the IR active layer filtering out IR wavelengths of light passing therethrough; and a deep ultraviolet (DUV) active layer arranged between the first protective layer and the second protective layer, the DUV active layer filtering out DUV wavelengths of light passing therethrough.
    Type: Application
    Filed: August 8, 2022
    Publication date: February 8, 2024
    Inventors: Yen-Hao Liu, Shao-Hua Wang, Chueh-Chi Kuo, Li-Jui Chen, Heng-Hsin Liu
  • Publication number: 20240019789
    Abstract: A reticle is pre-heated prior to an exposure operation of a semiconductor substrate lot to reduce substrate to substrate temperature variations of the reticle in the exposure operation. The reticle may be pre-heated while being stored in a reticle storage slot, while being transferred from the reticle storage slot to a reticle stage of an exposure tool, and/or in another location prior to being secured to the reticle stage for the exposure operation. In this way, the reduction in temperature variation of the reticle in the exposure operation provided by pre-heating the reticle may reduce overlay deltas and misalignment for the semiconductor substrates that are processed in the exposure operation. This increases overlay performance, increases yield of the exposure tool, and increases semiconductor device quality.
    Type: Application
    Filed: August 9, 2023
    Publication date: January 18, 2024
    Inventors: Kai-Chieh CHANG, Kai-Fa HO, Li-Jui CHEN, Heng-Hsin LIU
  • Publication number: 20240004304
    Abstract: Methods and apparatuses for a lithography exposure process are described. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The methods utilized and the apparatuses include two or more collectors for collecting the generated EUV light and reflecting the collected EUV light to a focal point of one of the collectors. In some embodiments, one of the two collectors includes a ring-shaped collector.
    Type: Application
    Filed: June 30, 2022
    Publication date: January 4, 2024
    Inventors: Cheng Hung TSAI, Sheng-Kang YU, Shang-Chieh CHIEN, Heng-Hsin LIU, Li-Jui CHEN
  • Publication number: 20240006202
    Abstract: A load-lock chamber with reduced particle contamination is disclosed. At least one movable particle shield is placed between the gate valve and a wafer location. Particles which can be generated due to contact between the gate valve door and its seat are blocked or inhibited by the particle shield from landing in the wafer location, reducing particle contamination. Methods for operating the load-lock chamber are also disclosed.
    Type: Application
    Filed: June 30, 2022
    Publication date: January 4, 2024
    Inventors: Zheng-Hao Zhang, Hsin Yi Tseng, Chueh-Chi Kuo, Li-Jui Chen, Heng-Hsin Liu
  • Patent number: 11860544
    Abstract: A method of controlling an extreme ultraviolet (EUV) lithography system is disclosed. The method includes irradiating a target droplet with EUV radiation, detecting EUV radiation reflected by the target droplet, determining aberration of the detected EUV radiation, determining a Zernike polynomial corresponding to the aberration, and performing a corrective action to reduce a shift in Zernike coefficients of the Zernike polynomial.
    Type: Grant
    Filed: May 23, 2022
    Date of Patent: January 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ting-Ya Cheng, Han-Lung Chang, Shi-Han Shann, Li-Jui Chen, Yen-Shuo Su
  • Patent number: 11852978
    Abstract: The present disclosure provides a method for an extreme ultraviolet (EUV) lithography system that includes a radiation source having a laser device configured with a mechanism to generate an EUV radiation. The method includes collecting a laser beam profile of a laser beam from the laser device in a 3-dimensional (3D) mode; collecting an EUV energy distribution of the EUV radiation generated by the laser beam in the 3D mode; performing an analysis to the laser beam profile and the EUV energy distribution, resulting in an analysis data; and adjusting the radiation source according to the analysis data to enhance the EUV radiation.
    Type: Grant
    Filed: June 7, 2022
    Date of Patent: December 26, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Tai-Yu Chen, Tzu-Jung Pan, Kuan-Hung Chen, Sheng-Kang Yu, Shang-Chieh Chien, Li-Jui Chen, Heng-Hsin Liu