Patents by Inventor Li-Jui Chen

Li-Jui Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11556065
    Abstract: A method includes moving a wafer stage to a first station on a table body of a lithography chamber; placing a wafer on a top surface of the wafer stage; emitting a first laser beam from a first laser emitter toward a first beam splitter on a first sidewall of the wafer stage, wherein a first portion of the first laser beam is reflected by the first beam splitter to form a first reflected laser beam, and a second portion of the first laser beam transmits through the first beam splitter to form a first transmitted laser beam; calculating a position of the wafer stage on a first axis based on the first reflected laser beam; after calculating the position of the wafer, moving the wafer stage to a second station on the table body; and performing a lithography process to the wafer.
    Type: Grant
    Filed: September 7, 2021
    Date of Patent: January 17, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Huan Chen, Yu-Chih Huang, Ya-An Peng, Shang-Chieh Chien, Li-Jui Chen, Heng-Hsin Liu
  • Publication number: 20230010810
    Abstract: A system and a method for supplying target material in an EUV light source are provided. The system for supplying a target material comprises a priming assembly, a refill assembly and a droplet generator assembly. The priming is configured to transform the target material from a solid state to a liquid state. The refill assembly is in fluid communication with the priming assembly and configured to receive the target material in the liquid state from the priming assembly. Further, the refill assembly includes a purifier configured to purify the target material in the liquid state. The droplet generator assembly is configured to supply the target material in the liquid state from the refill assembly.
    Type: Application
    Filed: July 9, 2021
    Publication date: January 12, 2023
    Inventors: HSIN-FENG CHEN, MING-HSUN TSAI, LI-JUI CHEN, SHANG-CHIEH CHIEN, HENG-HSIN LIU, CHENG-HAO LAI, YU-HUAN CHEN, WEI-SHIN CHENG, YU-KUANG SUN, CHENG-HSUAN WU, YU-FA LO, CHIAO-HUA CHENG
  • Patent number: 11553581
    Abstract: A method for using an extreme ultraviolet radiation source is provided. The method includes assembling a first droplet generator onto a port of a vessel; ejecting a target droplet from the first droplet generator to a zone of excitation in front of a collector; emitting a laser toward the zone of excitation, such that the target droplet is heated by the laser to generate extreme ultraviolet (EUV) radiation; stopping the ejection of the target droplet; after stopping the ejection of the target droplet, disassembling the first droplet generator from the port of the vessel; after disassembling the first droplet generator from the port of the vessel, inserting a cleaning device into the vessel through the port; and cleaning the collector by using the cleaning device.
    Type: Grant
    Filed: July 7, 2021
    Date of Patent: January 10, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chiao-Hua Cheng, Hsin-Feng Chen, Yu-Fa Lo, Yu-Kuang Sun, Wei-Shin Cheng, Yu-Huan Chen, Ming-Hsun Tsai, Cheng-Hao Lai, Cheng-Hsuan Wu, Shang-Chieh Chien, Heng-Hsin Liu, Li-Jui Chen, Sheng-Kang Yu
  • Patent number: 11550228
    Abstract: A lithography apparatus is provided. The lithography apparatus includes a wafer stage configured to secure a semiconductor wafer and having a plurality of electrodes. The lithography apparatus also includes an exposure tool configured to perform an exposure process by projecting an extreme ultraviolet (EUV) light on the semiconductor wafer. The lithography apparatus further includes a controller configured to control power supplied to the electrodes to have a first adjusted voltage during the exposure process for a first group of exposure fields on the semiconductor wafer so as to secure the semiconductor wafer to the wafer stage. The first adjusted voltage is in a range from about 1.6 kV to about 3.2 kV.
    Type: Grant
    Filed: March 26, 2021
    Date of Patent: January 10, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Cheng-Kuan Wu, Po-Chung Cheng, Li-Jui Chen, Chih-Tsung Shih
  • Publication number: 20220413399
    Abstract: A coating is included on one or more components of a lithography system. The coating reduces surface roughness of the one or more surfaces, increases flatness of the one or more surfaces, and/or increases uniformity of the one or more surfaces. The coating may be formed on the one or more surfaces using one or more of the techniques described herein. The coating is configured to reduce adhesion of target material particles to the one or more surfaces, is configured to resist buildup of target material particles on the one or more surfaces, is configured to provide resistance against oxidation of the one or more surfaces, is configured to resist thermal damage of the one or more surfaces, and/or is configured to enable the lithography system to operate at higher operating temperatures, among other examples.
    Type: Application
    Filed: April 14, 2022
    Publication date: December 29, 2022
    Inventors: Shih-Yu TU, Chieh HSIEH, Shang-Chieh CHIEN, Sheng-Kang YU, Li-Jui CHEN, Heng-Hsin LIU
  • Publication number: 20220413398
    Abstract: An extreme ultraviolet (EUV) source includes a collector associated with the vessel. The extreme ultraviolet (EUV) source includes a plurality of vanes along walls of the vessel. Each vane includes a stacked vane segment, and the stacked vane segments for each vane are stacked in a direction of drainage of tin (Sn) in the vessel. The EUV source includes a thermal control system comprising a plurality of independently controllable heating elements, where a heating element is configured to provide localized control for heating of a vane segment of the stacked vane segments.
    Type: Application
    Filed: March 31, 2022
    Publication date: December 29, 2022
    Inventors: Cheng Hung TSAI, Sheng-Kang YU, Shang-Chieh CHIEN, Heng-Hsin LIU, Li-Jui CHEN
  • Publication number: 20220413401
    Abstract: Some implementations described herein provide a reticle cleaning device and a method of use. The reticle cleaning device includes a support member configured for extension toward a reticle within an extreme ultraviolet lithography tool. The reticle cleaning device also includes a contact surface disposed at an end of the support member and configured to bond to particles contacted by the contact surface. The reticle cleaning device further includes a stress sensor configured to measure an amount of stress applied to the support member at the contact surface. During a cleaning operation in which the contact surface is moving toward the reticle, the stress sensor may provide an indication that the amount of stress applied to the support member satisfies a threshold. Based on satisfying the threshold, movement of the contact surface and/or the support member toward the reticle ceases to avoid damaging the reticle.
    Type: Application
    Filed: March 22, 2022
    Publication date: December 29, 2022
    Inventors: Che-Chang HSU, Sheng-Kang YU, Shang-Chieh CHIEN, Li-Jui CHEN, Heng-Hsin LIU
  • Patent number: 11537053
    Abstract: Some implementations herein include a detection circuit and a fast and accurate in-line method for detecting blockage on a droplet generator head of an extreme ultraviolet exposure tool without impacting the flow of droplets of a target material through the droplet generator head. In some implementations described herein, the detection circuit includes a switch circuit that is configured in an open configuration, in which the switch is electrically open between two electrode elements. When an accumulation of the target material occurs across two or more electrode elements on the droplet generator head, the accumulation functions as a switch that closes the detection circuit. A controller may detect closure of the detection circuit.
    Type: Grant
    Filed: October 6, 2021
    Date of Patent: December 27, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chiao-Hua Cheng, Yu-Kuang Sun, Wei-Shin Cheng, Yu-Huan Chen, Ming-Hsun Tsai, Cheng-Hao Lai, Cheng-Hsuan Wu, Yu-Fa Lo, Shang-Chieh Chien, Heng-Hsin Liu, Li-Jui Chen, Sheng-Kang Yu
  • Publication number: 20220404716
    Abstract: A wafer table inspection tool described herein is capable of being positioned over a wafer table while the wafer table is positioned in a bottom module of an exposure tool of a lithography system. The wafer table inspection tool is capable of quickly evaluating the condition of surface burls on the wafer table and evaluating cleaning performance of a cleaning operation in which the surface burls are cleaned.
    Type: Application
    Filed: April 15, 2022
    Publication date: December 22, 2022
    Inventors: Ming-Hsun TSAI, Cheng-Hao LAI, Shang-Chieh CHIEN, Li-Jui CHEN, Heng-Hsin LIU
  • Publication number: 20220404722
    Abstract: A plurality of hydrogen outlets are arrayed along a direction normal to a surface (such as a surface of a collector) of an extreme ultraviolet lithography (EUV) tool to increase a volume of hydrogen gas surrounding the surface. As a result, airborne tin is more likely to be stopped by the hydrogen gas surrounding the surface and less likely to bind to the surface. Fewer tin deposits results in increased lifetime for the surface, which reduces downtime for the EUV tool. Additionally, a control device may receive (e.g., from a camera and/or another type of sensor) an indication of levels of tin contamination on the surface and control flow rates to adjust a thickness of the hydrogen curtain. As a result, tin contamination on the collector is less likely to occur and will be more efficiently cleaned by the hydrogen gas, which results in increased lifetime for the surface and reduced downtime for the EUV tool.
    Type: Application
    Filed: February 23, 2022
    Publication date: December 22, 2022
    Inventors: Tzu-Jung PAN, Sheng-Kang YU, Shang-Chieh CHIEN, Heng-Hsin LIU, Li-Jui CHEN
  • Publication number: 20220408538
    Abstract: Some implementations described herein provide techniques and apparatuses for inspecting interior surfaces of a vessel of a radiation source for an accumulation of a target material. An inspection tool, including a laser-scanning system and a motor system supported by an elongated supported member, may be inserted into the vessel to generate an accurate three-dimensional profile of the interior surfaces. Use of the inspection tool is efficient, with short setup and scan times that substantially reduce a duration associated with evaluating the interior surfaces of the vessel for the accumulation.
    Type: Application
    Filed: April 11, 2022
    Publication date: December 22, 2022
    Inventors: Jou-Hsuan LU, Chiao-Hua CHENG, Cheng-Hsuan WU, Ko-Ching HOU, Jyun-Yan CHUANG, Cheng-Hao LAI, Yu-Kuang SUN, Sheng-Kang YU, Shang-Chieh CHIEN, Li-Jui CHEN, Heng-Hsin LIU
  • Patent number: 11531278
    Abstract: Extreme ultraviolet (EUV) lithography systems are provided. A EUV scanner is configured to perform a lithography exposure process in response to EUV radiation. A light source is configured to provide the EUV radiation to the EUV scanner. A measuring device is configured to measure concentration of debris caused by unstable target droplets in the chamber. A controller is configured to adjust a first gas flow rate and a second gas flow rate in response to the measured concentration of the debris and a control signal from the EUV scanner. A exhaust device is configured to extract the debris out of the chamber according to the first gas flow rate. A gas supply device is configured to provide a gas into the chamber according to the second gas flow rate. The control signal indicates the lithography exposure process is completed.
    Type: Grant
    Filed: March 18, 2021
    Date of Patent: December 20, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chi Yang, Ssu-Yu Chen, Shang-Chieh Chien, Chieh Hsieh, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • Patent number: 11533799
    Abstract: A system and a method for supplying target material in an EUV light source are provided. The system for supplying a target material comprises a priming assembly, a refill assembly and a droplet generator assembly. The priming is configured to transform the target material from a solid state to a liquid state. The refill assembly is in fluid communication with the priming assembly and configured to receive the target material in the liquid state from the priming assembly. Further, the refill assembly includes a purifier configured to purify the target material in the liquid state. The droplet generator assembly is configured to supply the target material in the liquid state from the refill assembly.
    Type: Grant
    Filed: July 9, 2021
    Date of Patent: December 20, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Hsin-Feng Chen, Ming-Hsun Tsai, Li-Jui Chen, Shang-Chieh Chien, Heng-Hsin Liu, Cheng-Hao Lai, Yu-Huan Chen, Wei-Shin Cheng, Yu-Kuang Sun, Cheng-Hsuan Wu, Yu-Fa Lo, Chiao-Hua Cheng
  • Patent number: 11528797
    Abstract: An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a droplet generator with a nozzle and a piezoelectric structure coupled to the nozzle. The generator outputs groups of droplets. A control system applies a voltage waveform to the piezoelectric structure while the nozzle outputs the group of droplets. The waveform causes the droplets of the group to have a spread of velocities that results in the droplets coalescing into a single droplet prior to being irradiated by the laser.
    Type: Grant
    Filed: April 16, 2021
    Date of Patent: December 13, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Kuang Sun, Cheng-Hao Lai, Yu-Huan Chen, Wei-Shin Cheng, Ming-Hsun Tsai, Hsin-Feng Chen, Chiao-Hua Cheng, Cheng-Hsuan Wu, Yu-Fa Lo, Shang-Chieh Chien, Li-Jui Chen, Heng-Hsin Liu
  • Patent number: 11528798
    Abstract: A method includes ejecting a metal droplet from a reservoir of a first droplet generator assembled to a vessel; emitting an excitation laser from a laser source to the metal droplet to generate extreme ultraviolet (EUV) radiation; turning off the first droplet generator; cooling down the first droplet generator to a temperature not lower than about 150° C.; dismantling the first droplet generator from the vessel at the temperature not lower than about 150° C.; and assembling a second droplet generator to the vessel.
    Type: Grant
    Filed: June 3, 2021
    Date of Patent: December 13, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Yu Tu, Han-Lung Chang, Hsiao-Lun Chang, Li-Jui Chen, Po-Chung Cheng
  • Publication number: 20220392871
    Abstract: A semiconductor package and a method for manufacturing a semiconductor package are provided. The semiconductor package includes a first processing element, a first I/O element, a second processing element, and a second I/O element. The first processing element is on a substrate. The first I/O element is on the substrate and electrically connected to the first processing element. The second processing element is on the substrate. The second I/O element is on the substrate and electrically connected to the second processing element. The first I/O element is electrically connected to and physically separated from the second I/O element.
    Type: Application
    Filed: June 3, 2021
    Publication date: December 8, 2022
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Chang Chi LEE, Jung Jui KANG, Chiu-Wen LEE, Li Chieh CHEN
  • Patent number: 11520246
    Abstract: In a method of cleaning a lithography system, during idle mode, a stream of air is directed, through a first opening, into a chamber of a wafer table of an EUV lithography system. One or more particles is extracted by the directed stream of air from surfaces of one or more wafer chucks in the chamber of the wafer table. The stream of air and the extracted one or more particle are drawn, through a second opening, out of the chamber of the wafer table.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: December 6, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shih-Yu Tu, Shao-Hua Wang, Yen-Hao Liu, Chueh-Chi Kuo, Li-Jui Chen, Heng-Hsin Liu
  • Patent number: 11520243
    Abstract: A method includes transferring a wafer over a wafer stage on a wafer table. The wafer table includes a table body, a wafer stage, a first sliding member, a second sliding member, a first cable, a first bracket and a second bracket, and a stopper. The second sliding member is movable along a first direction, in which the first sliding member is coupled to a track of the second sliding member, the first sliding member being movable along a second direction vertical to the first direction. The first bracket and the second bracket are connected by a leaf spring. The method includes moving the wafer stage toward the edge of the table body, such that the wafer stage pushes the first cable outwardly, such that the leaf spring is moved toward a first protective film on a surface of the stopper facing the leaf spring.
    Type: Grant
    Filed: May 3, 2021
    Date of Patent: December 6, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shao-Hua Wang, Chueh-Chi Kuo, Kuei-Lin Ho, Zong-You Yang, Cheng-Wei Sun, Wei-Yuan Chen, Cheng-Chieh Chen, Heng-Hsin Liu, Li-Jui Chen
  • Publication number: 20220382048
    Abstract: An EUV collector mirror for an extreme ultra violet (EUV) radiation source apparatus includes an EUV collector mirror body on which a reflective layer as a reflective surface is disposed, a heater attached to or embedded in the EUV collector mirror body and a drain structure to drain melted metal from the reflective surface of the EUV collector mirror body to a back side of the EUV collector mirror body.
    Type: Application
    Filed: August 10, 2022
    Publication date: December 1, 2022
    Inventors: Yu-Chih CHEN, Po-Chung CHENG, Li-Jui CHEN, Shang-Chieh CHIEN, Sheng-Kang YU, Wei-Chun YEN
  • Publication number: 20220382172
    Abstract: A lithography system includes a table body, a wafer stage, a first sliding member, a second sliding member, a first cable, a first bracket, a rail guide, and a first protective film. The first sliding member is coupled to the wafer stage. The second sliding member is coupled to an edge of the table body, in which the first sliding member is coupled to a track of the second sliding member. The first bracket fixes the first cable, the first bracket being coupled to a roller structure, in which the roller structure includes a body and a wheel coupled to the body. The rail guide confines a movement of the wheel of the roller structure. The first protective film is adhered to a surface of the rail guide, in which the roller structure is moveable along the first protective film on the surface of the rail guide.
    Type: Application
    Filed: August 9, 2022
    Publication date: December 1, 2022
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shao-Hua WANG, Chueh-Chi KUO, Kuei-Lin HO, Zong-You YANG, Cheng-Wei SUN, Wei-Yuan CHEN, Cheng-Chieh CHEN, Heng-Hsin LIU, Li-Jui CHEN