Abstract: Example implementations described herein include a laser source and associated methods of operation that can balance or reduce uneven beam profile problem and even improve plasma heating efficiency to enhance conversion efficiency and intensity for extreme ultraviolet radiation generation. The laser source described herein generates an auxiliary laser beam to augment a pre-pulse laser beam and/or a main-pulse laser beam, such that uneven beam profiles may be corrected and/or compensated. This may improve an intensity of the laser source and also improve an energy distribution from the laser source to a droplet of a target material, effective to increase an overall operating efficiency of the laser source.

Abstract: A heat dissipation device includes at least a temperature plate and a cooling fin assembly. The temperature plate includes a plate body and a supporter. The plate body includes a vacuum chamber and a first external surface. The plate body is bent to form at least a bent portion with the first external surface being a compressive side, and the supporter is disposed at the bent portion. The supporter is disposed inside the vacuum chamber and connected to an inner wall of the vacuum chamber. The cooling fin assembly is disposed on the first external surface.

Abstract: The present invention relates to a method for producing recombinant human prethrombin-2 protein and having human ?-thrombin activity by the plant-based expression systems.

Abstract: A memory device includes a first field effect transistor (FET) stack on a first bottom source/drain region, which includes a first vertical transport field effect transistor (VTFET) device between a second VTFET device and the first source/drain region, and a second FET stack on a second bottom source/drain region, which includes a third VTFET device between a fourth VTFET device and the bottom source/drain region. The memory device includes a third FET stack on a third bottom source/drain region, which includes a fifth VTFET between a sixth VTFET and the third source/drain region, which is laterally adjacent to the first and second source/drain regions. The memory device includes a first electrical connection interconnecting a gate structure of the third VTFET with a gate structure of the fifth VTFET, and a second electrical connection interconnecting a gate structure of the second VTFET with a gate structure of the sixth VTFET.

Abstract: A display apparatus and a display method are provided. The display apparatus includes a display panel, a display film assembly, a privacy film assembly, and a light source. The display film assembly includes a first light guide plate and an optical film. The optical privacy film assembly includes a second light guide plate and a privacy film. The privacy film is configured to adjust divergent lights exiting the second light guide plate into privacy lights at a preset angle. The light source is configured to emit incident lights to be selectively irradiated to the first light guide plate or the second light guide plate, so that the display apparatus is able to switch between a normal display mode and a privacy display mode.

Abstract: Disclosed are a backlight module and a curved display device. The backlight module includes a backplane and a backlight. The backplane includes a backplane body and two arc fixing components. The backplane body is provided with two opposite arc sides and each arc fixing component is correspondingly detachably installed at each arc side to restrict a curvature of the backplane body. A mounting groove is formed by the cooperative enclosure of two arc fixing components and an inner surface of the backplane body. The backlight is provided into the mounting groove.

Abstract: A radiation source apparatus includes a vessel, a laser source, a collector, a horizontal obscuration bar, and a reflective mirror. The vessel has an exit aperture. The laser source is configured to emit a laser beam to excite a target material to form a plasma. The collector is disposed in the vessel and configured to collect a radiation emitted by the plasma and to reflect the collected radiation to the exit aperture of the vessel. The horizontal obscuration bar extends from a sidewall of the vessel at least to a position between the laser source and the exit aperture of the vessel. The reflective mirror is in the vessel and connected to the horizontal obscuration bar.

Abstract: The present disclosure provides an extreme ultraviolet (EUV) lithography system including a radiation source and an EUV control system integrated with the radiation source. The EUV control system includes a 3-dimensional diagnostic module (3DDM) designed to collect a laser beam profile of a laser beam from the radiation source in a 3-dimensional (3D) mode, an analysis module designed to analyze the laser beam profile, a database designed to store the laser beam profile, and an EUV control module designed to adjust the radiation source. The analysis module is coupled with the database and the EUV control module. The database is coupled with the 3DDM and the analysis module. The EUV control module is coupled with the analysis module and the radiation source.

Abstract: A circuit board with anti-corrosion properties, a method for manufacturing the circuit board, and an electronic device are provided. The circuit board includes a circuit substrate, a first protective layer, and a second protective layer. The circuit substrate includes a base layer and an outer wiring layer formed on the base layer. The circuit substrate further defines a via hole connected to the outer wiring layer. The first protective layer is formed on the outer wiring layer and an inner sidewall of the via hole, and is made of a white oil. The second protective layer is formed on the first protective layer.

Abstract: An interconnect structure and a method of forming the interconnect structure are provided. The interconnect structure includes one or more metal lines in direct contact with a top surface of one or more devices and one or more vias in direct contact with top surfaces of the one or more metal lines. The interconnect structure also includes one or more dielectric pillars in direct contact with the top surface of the one or more devices. A height of a top surface of the one or more dielectric pillars above the one or more devices is equal to a height of a top surface of the one or more vias above the one or more devices.

Abstract: A CMOS apparatus includes an n-doped field effect transistor (nFET); and a p-doped field effect transistor (pFET), each of which has a source structure and a drain structure. A common backside drain contact, which is disposed at the backside surface of the nFET and the pFET, electrically connects the nFET drain structure and the pFET drain structure to a backside interconnect layer.

Abstract: A microelectronic structure including a first nano device, where the first nano device includes a plurality of transistors. A bottom dielectric isolation located on the backside of each of the plurality of transistors of the first nano device. A separating dielectric layer located on the backside of the bottom dielectric isolation layer, where the separating dielectric layer is a continuous layer on the backside of each of the plurality of transistors of the first nano device.

Abstract: A micro electro mechanical system (MEMS) includes a circuit substrate comprising electronic circuitry, a support substrate having a recess, a bonding layer disposed between the circuit substrate and the support substrate, through holes passing through the circuit substrate to the recess, a first conductive layer disposed on a front side of the circuit substrate, and a second conductive layer disposed on an inner wall of the recess. The first conductive layer extends into the through holes and the second conductive layer extends into the through holes and coupled to the first conductive layer.

Abstract: A semiconductor device includes a substrate, a dielectric layer disposed over the substrate, and an interconnect structure extending through the dielectric layer. The dielectric layer includes a low-k dielectric material which includes silicon carbonitride having a carbon content ranging from about 30 atomic % to about 45 atomic %. The semiconductor device further includes a thermal dissipation feature extending through the dielectric layer and disposed to be spaced apart from the interconnect structure.

Abstract: A multimode biological sample inspection apparatus and method is provided. The apparatus includes an illumination hardware arrangement comprising transmission and sensing hardware configured to inspect a biological sample using at least two modes from a group comprising a fluorescence imaging mode, a reflectance imaging mode, a scattering imaging mode, and a Raman imaging mode, and processing hardware configured to operate the illumination hardware arrangement according to a protocol comprising inspection settings of the at least two modes. The processing hardware receives scan results from the illumination hardware arrangement and identifies attributes of the biological sample by constructing a multidimensional dataset comprising at least one spatial dimension and at least one spectral dimension from the scan results and analyzing the multidimensional dataset. The processing hardware is configured to employ the attributes of at least one biological sample and alter the protocol.

Abstract: A physiological signal monitoring device is adapted for monitoring a physiological signal of a biofluid, and includes: a biosensor strip that has at least one signal output end adapted for outputting the physiological signal; a strip reciprocating module that includes a strip seat for receiving the biosensor strip, a guide seat mounted to the strip seat, and a rotating plate mounted rotatably to the strip seat for triggering reciprocating movement of the biosensor strip and the guide seat relative to the strip seat; and a contact module that includes an electronic module, and at least one extending piece connected electrically with the at least one signal output end to transmit the physiological signal to the electronic module.

Abstract: A method for sequencing a biological molecule, such as a nucleic acid molecule, and a method for detecting and/or correcting sequencing error(s) in the sequencing results are provided. Kits and systems based on the above methods are also provided.

Abstract: Provided in the present disclosure are a method and an apparatus for suppressing noise by calculating a speech presence probability, a storage medium, and a terminal. The method includes: obtaining an input signal, and converting the input signal from a time-domain signal to a frequency-domain signal (S101); calculating a real-time power spectrum of the frequency-domain signal, and tracking a minimum power in the real-time power spectrum (S102); performing noise estimation based on the minimum power to obtain an estimated noise power spectrum (S103); calculating a gain coefficient based on the estimated noise power spectrum, and enhancing the frequency-domain signal based on the gain coefficient to obtain an enhanced frequency-domain signal (S104); and converting the enhanced frequency-domain signal to a time-domain signal to obtain an output signal (S105).

Abstract: A roadside apparatus and a communication beam pointing direction adjusting method thereof are provided. A first radio frequency identification reader detects a first response signal of a wireless identification tag of a first mobile vehicle to obtain first signal strength information. The first signal strength information corresponds to strength of the first response signal. A first roadside unit determines a position of the first mobile vehicle according to the first signal strength information, and directs a communication beam of the first roadside unit to the first mobile vehicle.

Abstract: An electronic device includes a time of flight (ToF) sensor, a proximity sensor, and an ambient light sensor. The ToF sensor, the proximity sensor, and the ambient light sensor are located on a same side of the electronic device. When the ToF sensor is turned on, a light sensor (for example, the proximity sensor and/or the ambient light sensor) may be controlled to be turned off, and when the ToF sensor is turned off, the light sensor may be controlled to be turned on. Alternatively, when the ToF sensor is turned on, data measured by a light sensor is discarded, and when the ToF sensor is turned off, a corresponding function is implemented based on data measured by the light sensor.