Abstract: A barbell is provided. The barbell includes a main body and two holding elements. The main body is elongated and hollow to enclose a receiving room. The receiving room is adapted for being filled with fluid or solid. The main body defines a longitudinal direction. The main body is formed with at least one positioning recess on the outer surface thereof. Each holding element is movable sleeved onto the main body. The holding element has a positioning element which is selectively abutted against the positioning recess to position the holding element on the main body. The holding element further has a holding portion for holding.

Abstract: A barbell is provided. The barbell includes a main body and two holding elements. The main body is elongated and hollow to enclose a receiving room. The receiving room is adapted for being filled with fluid or solid. The main body defines a longitudinal direction. The main body is formed with at least one positioning recess on the outer surface thereof. Each holding element is movable sleeved onto the main body. The holding element has a positioning element which is selectively abutted against the positioning recess to position the holding element on the main body. The holding element further has a holding portion for holding.

Abstract: Methods for an oxide layer over an epitaxial layer. In an embodiment, a method includes forming an epitaxial layer of semiconductor material over a semiconductor substrate; forming an oxide layer over the epitaxial layer; applying a solution including an oxidizer to the oxide layer; and cleaning the oxide layer with a cleaning solution. In another embodiment, a densification process is applied to an oxide layer including treating with thermal energy, UV energy, or both. In an embodiment for a gate-all-around device, the cleaning process is applied to an oxide layer over an epitaxial portion of a fin. Additional methods are disclosed.

Abstract: Methods for an oxide layer over an epitaxial layer. In an embodiment, a method includes forming an epitaxial layer of semiconductor material over a semiconductor substrate; forming an oxide layer over the epitaxial layer; applying a solution including an oxidizer to the oxide layer; and cleaning the oxide layer with a cleaning solution. In another embodiment, a densification process is applied to an oxide layer including treating with thermal energy, UV energy, or both. In an embodiment for a gate-all-around device, the cleaning process is applied to an oxide layer over an epitaxial portion of a fin. Additional methods are disclosed.