Abstract: A semiconductor device includes a substrate, a dielectric layer disposed over the substrate, and an interconnect structure extending through the dielectric layer. The dielectric layer includes a low-k dielectric material which includes silicon carbonitride having a carbon content ranging from about 30 atomic % to about 45 atomic %. The semiconductor device further includes a thermal dissipation feature extending through the dielectric layer and disposed to be spaced apart from the interconnect structure.

Abstract: A semiconductor structure includes a base structure including a substrate and a device unit disposed on a front surface of the substrate, a front dielectric portion disposed on the front surface to cover the device unit, a front conductive layer disposed in the front dielectric portion and connected to the device unit, a back dielectric unit disposed on a back surface of the substrate opposite to the front surface and including at least one first part which includes a first dielectric portion having a thermal conductivity which is greater than that of the front dielectric portion, and a back conductive unit which is disposed in the back dielectric unit and connected to the device unit, and which includes at least one first conductive layer disposed in the at least one first part.

Abstract: A method for manufacturing a semiconductor device includes: forming a first conductive interconnect which penetrates a dielectric layer disposed over a substrate; forming a patterned dielectric layer on the dielectric layer, the patterned dielectric layer being formed with a trench and the first conductive interconnect being exposed from the trench; selectively forming a blocking layer to cover the first conductive interconnect, the blocking layer being formed using an acidic solution including a blocking material; selectively forming a barrier material layer on the dielectric layer and the patterned dielectric layer; removing the blocking layer; forming a conductive material layer on the barrier material layer; and removing a portion of the conductive material layer and a portion of the barrier material layer to form a second conductive connected to the first conductive interconnect.

Abstract: A method for manufacturing an interconnect structure includes: forming a first dielectric layer; forming a mask; patterning the first dielectric layer through the mask to form a trench, an inner surface of the trench having two first portions opposite to each other along an X direction, two second portions opposite to each other along a Y direction, and a bottom portion; forming a second dielectric layer over the mask and the patterned first dielectric layer, and along an inner surface of the trench; etching the second dielectric layer by directing an etchant in a predetermined direction such that a first part of the second dielectric layer on the two first portions and the bottom portion is removed, and a second part of the second dielectric layer on the second portions of the trench remains and is formed into two reinforcing spacers; and forming a trench-filling element.

Abstract: A semiconductor device includes a conductive feature part, a dielectric structure and a metal layer. The dielectric structure is formed over the conductive feature part. The dielectric structure includes a first dielectric layer and a second dielectric layer stacked on each other. The first dielectric layer and the second dielectric layer include different dielectric materials. The metal layer is disposed in the first dielectric layer and the second dielectric layer. The bottom surface of the metal layer is electrically connected to the conductive feature part, and the top surface of the metal layer is coplanar with the top surface of the dielectric structure. The bottom surface and the top surface of the metal layer have profiles of different sizes.

Abstract: A method for manufacturing a semiconductor device includes: forming metal lines on a substrate; forming first dielectric portions on the metal lines, respectively; forming first mask portions on the first dielectric portions, respectively; forming second dielectric portions on the substrate; selectively forming second mask portions on the second dielectric portions, respectively; removing one of the first mask portions and a corresponding one of the first dielectric portions, so as to form an opening that exposes a corresponding one of the metal lines; forming a contact via material layer to fill the opening; and removing a portion of the contact via material layer, remaining ones of the first mask portions and the second mask portions, so as to form a contact via that is disposed on and electrically connected to the corresponding one of the metal lines.

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, strained layers, source/drain contact patterns, a gate contact via, and source/drain contact vias. The gate structure is disposed over the semiconductor substrate. The strained layers are disposed aside the gate structure. The source/drain contact patterns are disposed on and electrically connected to the strained layers. Top surfaces of the source/drain contact patterns are coplanar with a top surface of the gate structure. The gate contact via is disposed on and electrically connected to the gate structure. The source/drain contact vias are disposed on and electrically connected to the source/drain contact patterns.

Abstract: A method for manufacturing an interconnect structure includes: forming a first dielectric layer; forming a mask; patterning the first dielectric layer through the mask to form a trench, an inner surface of the trench having two first portions opposite to each other along an X direction, two second portions opposite to each other along a Y direction, and a bottom portion; forming a second dielectric layer over the mask and the patterned first dielectric layer, and along an inner surface of the trench; etching the second dielectric layer by directing an etchant in a predetermined direction such that a first part of the second dielectric layer on the two first portions and the bottom portion is removed, and a second part of the second dielectric layer on the second portions of the trench remains and is formed into two reinforcing spacers; and forming a trench-filling element.

Abstract: The semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a first dielectric layer, a first metal layer, a second metal layer, a first etching stop layer, a second etching stop layer, a second dielectric layer, a first via and a second via. The first metal layer and the second metal are embedded in the first dielectric layer. The first etching stop layer is disposed on the first dielectric layer. The second etching stop layer is disposed on the first etching stop layer. The second dielectric layer is disposed on the second etching stop layer. The first via and the second via are embedded in the second dielectric layer. A width of the second etching stop layer is smaller a width of the first etching stop layer.

Abstract: A method for fabricating an integrated circuit device is provided. The method includes depositing a first dielectric layer; depositing a second dielectric layer over the first dielectric layer; etching a trench opening in the second dielectric layer, wherein the trench opening exposes a first sidewall of the second dielectric layer and a second sidewall of the second dielectric layer, the first sidewall of the second dielectric layer extends substantially along a first direction, and the second sidewall of the second dielectric layer extends substantially along a second direction different from the first direction in a top view; forming a via etch stop layer on the first sidewall of the second dielectric layer, wherein the second sidewall of the second dielectric layer is free from coverage by the via etch stop layer; forming a conductive line in the trench opening; and forming a conductive via over the conductive line.

Abstract: A semiconductor device includes a substrate, a heat dissipation dielectric layer, a conductive interconnect structure, and a blocking dielectric layer. The heat dissipation dielectric layer is disposed on the substrate and has a thermal conductivity greater than 10 W/mK. The conductive interconnect structure is disposed in the heat dissipation dielectric layer. The blocking dielectric layer is disposed in the heat dissipation dielectric layer to isolate the conductive interconnect structure from the heat dissipation dielectric layer.

Abstract: A semiconductor structure includes a base structure including a substrate and a device unit disposed on a front surface of the substrate, a front dielectric portion disposed on the front surface to cover the device unit, a front conductive layer disposed in the front dielectric portion and connected to the device unit, a back dielectric unit disposed on a back surface of the substrate opposite to the front surface and including at least one first part which includes a first dielectric portion having a thermal conductivity which is greater than that of the front dielectric portion, and a back conductive unit which is disposed in the back dielectric unit and connected to the device unit, and which includes at least one first conductive layer disposed in the at least one first part.

Abstract: A semiconductor device includes a substrate, a dielectric layer disposed over the substrate, and an interconnect structure extending through the dielectric layer. The dielectric layer includes a low-k dielectric material which includes silicon carbonitride having a carbon content ranging from about 30 atomic % to about 45 atomic %. The semiconductor device further includes a thermal dissipation feature extending through the dielectric layer and disposed to be spaced apart from the interconnect structure.