Abstract: A method employs an unmanned aerial vehicle to carry an electromagnetic field measurement system to overcome environmental obstacles in measuring environmental electromagnetic field. The electromagnetic field measurement system senses the electromagnetic field of a spatial position in the environment to generate a sensing signal, then processes the sensing signal to remove the high-frequency electromagnetic interference generated by the operation of the unmanned aerial vehicle itself from the sensing signal, and converts the processed sensing signal into a digital signal. The digital signal is processed to extract at least one wave according to a fundamental frequency and a harmonic order, thereby removing the low-frequency electromagnetic interference from the digital signal. The extracted wave is employed in calculating an environmental electromagnetic field value of the spatial location.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes a staircase structure disposed over a substrate. The staircase structure includes a plurality of layer stacks, where each layer stack is made of a first material layer over a portion of a second material layer. The staircase structure further includes a plurality of landing pads, where each landing pad is disposed over another portion of the second material layer of a respective layer stack.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes a staircase structure disposed over a substrate. The staircase structure includes a plurality of layer stacks, where each layer stack is made of a first material layer over a portion of a second material layer. The staircase structure further includes a plurality of landing pads, where each landing pad is disposed over another portion of the second material layer of a respective layer stack.

Abstract: A push-pull force control method for a horizontal directional drilling machine with the following steps is provided. According to a correspondence relationship between a motor displacement and a maximum push-pull force of a drilling machine, the motor displacement is first adjusted, so that the required push-pull force can be obtained through the adjustment of the subsequent steps. Then, an oil feeding pressure of the motor is controlled according to a relationship between the push-pull force and the working pressure difference of the motor. Finally, the push-pull force of the motor is controlled in real time according to the oil feeding pressure of the motor to be equal to the required push-pull force value.

Abstract: An electronic device including a plurality of light-emitting units, a driving circuit, and a controlling circuit is provided. The driving circuit is configured to drive at least one of the light-emitting units. The controlling circuit is configured to control the driving circuit. The plurality of light-emitting units, the driving circuit, and the controlling circuit are respectively disposed on different substrates.

Abstract: An indoor grey water purification and reuse device, system and method for public buildings is disclosed. The grey water purification and reuse device includes a grey water storage tank, a grey water treatment assembly and a pneumatic reclaimed water tank assembly which are sequentially arranged from top to bottom. The grey water storage tank is used for storing grey water from one floor above collected by a grey water collecting device. The grey water treatment assembly is used for carrying out multistage purification treatment on the grey water in the grey water storage tank. The pneumatic reclaimed water tank assembly is used for disinfecting reclaimed water subjected to multistage purification treatment and supplying water to reclaimed water reuse facilities on the current floor of the building in a constant-pressure mode.

Abstract: The present application provides methods of treating a disease (such as cancer or infectious disease) that involves an antagonist that targets PLA2G2D signaling pathway (such as an antagonist that targets PLA2G2D. The present application also provides non-naturally occurring PLA2G2D polypeptides.

Abstract: A hoisting machinery comprises a steering wheel and wheels, wherein the active steering system comprises an active steering device, a hydraulic power steering gear and a hydraulic power steering system, the active steering device is arranged between the steering wheel and a pitman arm of the hoisting machinery, so as to adjust a steering ratio of the steering wheel to the pitman arm according to a driving cycle of the hoisting machinery, and the hydraulic power steering gear is arranged between the steering wheel and the pitman arm, so as to control the hydraulic power steering system to drive steering of the wheels. In the active steering system of the present invention, a hydraulic power steering system is adopted to drive steering of wheels, which can improve capability of overcoming steering resistance and can be applicable to multiple chassis of cranes, thereby enlarging application ranges of the active steering system.

Abstract: A N-heterocyclic five-membered ring-containing capsid protein assembly inhibitor, and a pharmaceutical composition and use thereof, specifically relating to a compound as represented by formula I, a stereoisomer, a tautomer, a geometrical isomer, a solvate, an active metabolite, a hydrate, a prodrug or a pharmaceutically acceptable salt thereof, a pharmaceutical composition thereof, and a medical use thereof. The medical use comprises the use in treating diseases benefiting from the capsid protein assembly inhibitor, and in particular, diseases caused by hepatitis B virus infection.

Abstract: An embodiment is a method including forming a raised portion of a substrate, forming fins on the raised portion of the substrate, forming an isolation region surrounding the fins, a first portion of the isolation region being on a top surface of the raised portion of the substrate between adjacent fins, forming a gate structure over the fins, and forming source/drain regions on opposing sides of the gate structure, wherein forming the source/drain regions includes epitaxially growing a first epitaxial layer on the fin adjacent the gate structure, etching back the first epitaxial layer, epitaxially growing a second epitaxial layer on the etched first epitaxial layer, and etching back the second epitaxial layer, the etched second epitaxial layer having a non-faceted top surface, the etched first epitaxial layer and the etched second epitaxial layer forming source/drain regions.

Abstract: A process is provided to fabricate a finFET device having a semiconductor layer of a two-dimensional “2D” semiconductor material. The semiconductor layer of the 2D semiconductor material is a thin film layer formed over a dielectric fin-shaped structure. The 2D semiconductor layer extends over at least three surfaces of the dielectric fin structure, e.g., the upper surface and two sidewall surfaces. A vertical protrusion metal structure, referred to as “metal fin structure”, is formed about an edge of the dielectric fin structure and is used as a seed to grow the 2D semiconductor material.

Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a chip structure including a substrate and a wiring structure over a first surface of the substrate. The method includes removing a first portion of the wiring structure adjacent to the hole to widen a second portion of the hole in the wiring structure. The second portion has a first width increasing in a first direction away from the substrate. The method includes forming a first seed layer over the wiring structure and in the hole. The method includes thinning the substrate from a second surface of the substrate until the first seed layer in the hole is exposed. The method includes forming a second seed layer over the second surface of the substrate and the first seed layer in the hole.

Abstract: A semiconductor device includes a substrate, at least one via, a liner layer and a conductive layer. The substrate includes an electronic circuitry. The at least one via passes through the substrate. The at least one via includes a plurality of concave portions on a sidewall thereof. The liner layer fills in the plurality of concave portions of the at least one via. The conductive layer is disposed on the sidewall of the at least one via, covers the liner layer, and extends onto a surface of the substrate. The thickness of the conductive layer on the sidewall of the at least one via is varied.

Abstract: A method of forming a semiconductor includes forming a first recess in a first semiconductor fin protruding from a substrate and forming a second recess in a second semiconductor fin protruding from the substrate first semiconductor fin and forming a source/drain region in the first recess and the second recess. Forming the source/drain region includes forming a first portion of a first layer in the first recess and forming a second portion of the first layer in the second recess, forming a second layer on the first layer by flowing a first precursor, and forming a third layer on the second layer by flowing a second precursor, the third layer being a single continuous material.

Abstract: A display panel has a pattern recognition region. The display panel includes a heat dissipation film, a connection portion, and a conductive portion. The heat dissipation film includes an adhesive layer, a heat conduction layer, and a conductive layer that are away from a display substrate in sequence. The heat dissipation film further includes a pattern recognition hole penetrating the adhesive layer, the heat conduction layer, and the conductive layer. A surface of the connection portion away from the display substrate is exposed by the pattern recognition hole. The connection portion is included in the display substrate, or is located outside the display substrate. The conductive portion is disposed at least on a hole wall of the pattern recognition hole, and an end of the conductive portion is connected to the conductive layer, and another end of the conductive portion is connected to the connection portion.

Abstract: Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for training an image embedding model. In one aspect, a method comprises: obtaining training data comprising a plurality of training examples, wherein each training example comprises: an image pair comprising a first image and a second image; and selection data indicating one or more of: (i) a co-click rate of the image pair, and (ii) a similar-image click rate of the image pair; and using the training data to train an image embedding model having a plurality of image embedding model parameters.

Abstract: A heat-resistant H1N1 subtype influenza virus mutant strain rPR8-HA-N5 has been preserved at China Center for Type Culture Collection, Wuhan University, Wuhan, China with the preservation number of CCTCC No. V202043.

Abstract: A transistor structure includes a semiconductor substrate, a gate structure, a channel region, and a first conductive region. The semiconductor substrate has a semiconductor surface. The gate structure is above the semiconductor surface, and a first concave is formed to reveal the gate structure. The channel region is under the semiconductor surface. The first conductive region is electrically coupled to the channel region, and a second concave is formed to reveal the first conductive region. A mask pattern in a photolithography process is used to define the first concave, and the mask pattern only defines one dimension length of the first concave.

Abstract: A MOS capacitor includes a substrate having a capacitor forming region thereon, an ion well having a first conductivity type in the substrate, a counter doping region having a second conductivity type in the ion well within the capacitor forming region, a capacitor dielectric layer on the ion well within the capacitor forming region, a gate electrode on the capacitor dielectric layer, a source doping region having the second conductivity type on a first side of the gate electrode within the capacitor forming region, and a drain doping region having the second conductivity type on a second side of the gate electrode within the capacitor forming region.

Abstract: The present invention relates to the fields of medicinal chemistry and pharmacotherapeutics, and in particular to a 2-cyano-3,12-dioxoolean-1,9(11)-dien-17-phenylacrylamide derivative and a preparation method thereof; and the present invention further relates to use of the novel compound in the preparation of an anticancer medicament.