Patents by Inventor Li-Min Hung
Li-Min Hung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11678133Abstract: The present disclosure provides one embodiment of an integrated microphone structure. The integrated microphone structure includes a first silicon substrate patterned as a first plate. A silicon oxide layer formed on one side of the first silicon substrate. A second silicon substrate bonded to the first substrate through the silicon oxide layer such that the silicon oxide layer is sandwiched between the first and second silicon substrates. A diaphragm secured on the silicon oxide layer and disposed between the first and second silicon substrates such that the first plate and the diaphragm are configured to form a capacitive microphone.Type: GrantFiled: September 14, 2020Date of Patent: June 13, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jung-Huei Peng, Chia-Hua Chu, Chun-Wen Cheng, Chin-Yi Cho, Li-Min Hung, Yao-Te Huang
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Publication number: 20220184614Abstract: A flow cell includes: a first substrate; a second substrate; a first resin layer disposed over an inner surface of the first substrate; a second resin layer disposed over an inner surface of the second substrate; a first plurality of biological capture sites located at the first resin layer; a second plurality of biological capture sites located at the second resin layer; and a polymer layer interposed between the first resin layer and the second resin layer, such that the first substrate is attached to the second substrate via at least the first resin layer, the polymer layer, and the second resin layer, wherein the polymer layer defines a plurality of microfluidic channels that extend through polymer layer.Type: ApplicationFiled: February 28, 2022Publication date: June 16, 2022Applicant: Illumina, Inc.Inventors: Shang-Ying TSAI, Li-Min Hung, Jung-Huei Peng, Shane Bowen, Hui Han, Danny Chan, Sang Park
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Patent number: 11298697Abstract: A flow cell includes: a first substrate; a second substrate; a first resin layer disposed over an inner surface of the first substrate; a second resin layer disposed over an inner surface of the second substrate; a first plurality of biological capture sites located at the first resin layer; a second plurality of biological capture sites located at the second resin layer; and a polymer layer interposed between the first resin layer and the second resin layer, such that the first substrate is attached to the second substrate via at least the first resin layer, the polymer layer, and the second resin layer, wherein the polymer layer defines a plurality of microfluidic channels that extend through polymer layer.Type: GrantFiled: November 7, 2019Date of Patent: April 12, 2022Assignee: ILLUMINA, INC.Inventors: Shang-Ying Tsai, Li-Min Hung, Jung-Huei Peng, Shane Bowen, Hui Han, Danny Chan, Sang Park
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Publication number: 20200413210Abstract: The present disclosure provides one embodiment of an integrated microphone structure. The integrated microphone structure includes a first silicon substrate patterned as a first plate. A silicon oxide layer formed on one side of the first silicon substrate. A second silicon substrate bonded to the first substrate through the silicon oxide layer such that the silicon oxide layer is sandwiched between the first and second silicon substrates. A diaphragm secured on the silicon oxide layer and disposed between the first and second silicon substrates such that the first plate and the diaphragm are configured to form a capacitive microphone.Type: ApplicationFiled: September 14, 2020Publication date: December 31, 2020Inventors: Jung-Huei Peng, Chia-Hua Chu, Chun-Wen Cheng, Chin-Yi Cho, Li-Min Hung, Yao-Te Huang
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Patent number: 10779100Abstract: An embodiment of an integrated microphone structure. The integrated microphone structure includes a first silicon substrate patterned as a first plate. A silicon oxide layer formed on one side of the first silicon substrate. A second silicon substrate bonded to the first substrate through the silicon oxide layer such that the silicon oxide layer is sandwiched between the first and second silicon substrates. A diaphragm secured on the silicon oxide layer and disposed between the first and second silicon substrates such that the first plate and the diaphragm are configured to form a capacitive microphone.Type: GrantFiled: June 6, 2018Date of Patent: September 15, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jung-Huei Peng, Chia-Hua Chu, Chun-wen Cheng, Chin-Yi Cho, Li-Min Hung, Yao-Te Huang
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Patent number: 10486153Abstract: The present disclosure provides flow cells and methods of fabricating flow cells. The method includes combining three portions: a first substrate, a second substrate, and microfluidic channels between the first substrate and the second substrate having walls of a photoresist dry film. Through-holes for inlet and outlet are formed in the first substrate or the second substrate. Patterned capture sites are stamped on the first substrate and the second substrate by a nanoimprint lithography process. In other embodiments, parts of the patterned capture sites are selectively attached to a surface chemistry pattern formed of silicon oxide islands each disposed on an outcrop of a soft bottom layer.Type: GrantFiled: May 23, 2017Date of Patent: November 26, 2019Assignee: ILLUMINA, INC.Inventors: Shang-Ying Tsai, Li-Min Hung, Jung-Huei Peng
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Patent number: 10273148Abstract: Some embodiments of the present disclosure provide a microelectromechanical systems (MEMS). The MEMS includes a semiconductive block. The semiconductive block includes a protruding structure. The protruding structure includes a bottom surface. The semiconductive block includes a sensing structure. A semiconductive substrate includes a conductive region. The conductive region includes a first surface under the sensing structure. The first surface is substantially coplanar with the bottom surface. A dielectric region includes a second surface not disposed over the first surface.Type: GrantFiled: August 14, 2015Date of Patent: April 30, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Chun-Wen Cheng, Jung-Huei Peng, Chia-Hua Chu, Nien-Tsung Tsai, Yao-Te Huang, Li-Min Hung, Yu-Chia Liu
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Publication number: 20180288549Abstract: The present disclosure provides one embodiment of an integrated microphone structure. The integrated microphone structure includes a first silicon substrate patterned as a first plate. A silicon oxide layer formed on one side of the first silicon substrate. A second silicon substrate bonded to the first substrate through the silicon oxide layer such that the silicon oxide layer is sandwiched between the first and second silicon substrates. A diaphragm secured on the silicon oxide layer and disposed between the first and second silicon substrates such that the first plate and the diaphragm are configured to form a capacitive microphone.Type: ApplicationFiled: June 6, 2018Publication date: October 4, 2018Inventors: Jung-Huei Peng, Chia-Hua Chu, Chun-wen Cheng, Chin-Yi Cho, Li-Min Hung, Yao-Te Huang
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Patent number: 9998843Abstract: The present disclosure provides one embodiment of an integrated microphone structure. The integrated microphone structure includes a first silicon substrate patterned as a first plate. A silicon oxide layer formed on one side of the first silicon substrate. A second silicon substrate bonded to the first substrate through the silicon oxide layer such that the silicon oxide layer is sandwiched between the first and second silicon substrates. A diaphragm secured on the silicon oxide layer and disposed between the first and second silicon substrates such that the first plate and the diaphragm are configured to form a capacitive microphone.Type: GrantFiled: February 8, 2016Date of Patent: June 12, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jung-Huei Peng, Chia-Hua Chu, Chun-wen Cheng, Chin-Yi Cho, Li-Min Hung, Yao-Te Huang
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Publication number: 20170326548Abstract: The present disclosure provides flow cells and methods of fabricating flow cells. The method includes combining three portions: a first substrate, a second substrate, and microfluidic channels between the first substrate and the second substrate having walls of a photoresist dry film. Through-holes for inlet and outlet are formed in the first substrate or the second substrate. Patterned capture sites are stamped on the first substrate and the second substrate by a nanoimprint lithography process. In other embodiments, parts of the patterned capture sites are selectively attached to a surface chemistry pattern formed of silicon oxide islands each disposed on an outcrop of a soft bottom layer.Type: ApplicationFiled: May 23, 2017Publication date: November 16, 2017Inventors: Shang-Ying Tsai, Li-Min Hung, Jung-Huei Peng
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Patent number: 9673169Abstract: A wafer seal ring may be formed on a wafer having a pattern structure with a pattern density. The wafer seal ring pattern structure may include a plurality of lines having a width and a spacing that may be approximately equal to a width and a spacing of die bond rings on the wafer. The wafer having the wafer seal ring formed thereon may be bonded to a wafer that may not have a wafer seal ring. A pair of wafers may be formed with respective wafer seal rings formed in a corresponding manner. The pair of wafers may be bonded together with the wafer seal rings aligned and bonded together to form a seal ring structure between the bonded wafers.Type: GrantFiled: February 5, 2013Date of Patent: June 6, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Chuan Teng, Jung-Huei Peng, Shang-Ying Tsai, Hsin-Ting Huang, Li-Min Hung, Yao-Te Huang, Chin-Yi Cho
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Patent number: 9656260Abstract: The present disclosure provides flow cells and methods of fabricating flow cells. The method includes combining three portions: a first substrate, a second substrate, and microfluidic channels between the first substrate and the second substrate having walls of a photoresist dry film. Through-holes for inlet and outlet are formed in the first substrate or the second substrate. Patterned capture sites are stamped on the first substrate and the second substrate by a nanoimprint lithography process. In other embodiments, parts of the patterned capture sites are selectively attached to a surface chemistry pattern formed of silicon oxide islands each disposed on an outcrop of a soft bottom layer.Type: GrantFiled: May 27, 2016Date of Patent: May 23, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shang-Ying Tsai, Li-Min Hung, Jung-Huei Peng
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Patent number: 9643838Abstract: A semiconductor device includes a substrate, an interconnection layer, an outgassing layer, and a patterned outgassing barrier layer. The interconnection layer is over the substrate. The outgassing layer is over the interconnection layer. The patterned outgassing barrier layer is over the outgassing layer. The patterned outgassing barrier layer includes a plurality of barrier structures and a plurality of openings. The plurality of openings expose a portion of an upmost surface of the outgassing layer, and a bottommost surface of the patterned outgassing barrier layer is substantially coplanar with the upmost surface of the outgassing layer.Type: GrantFiled: February 5, 2016Date of Patent: May 9, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDInventors: Chia-Hua Chu, Jung-Huei Peng, Yi-Chien Wu, Li-Min Hung
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Publication number: 20170044004Abstract: Some embodiments of the present disclosure provide a microelectromechanical systems (MEMS). The MEMS includes a semiconductive block. The semiconductive block includes a protruding structure. The protruding structure includes a bottom surface. The semiconductive block includes a sensing structure. A semiconductive substrate includes a conductive region. The conductive region includes a first surface under the sensing structure. The first surface is substantially coplanar with the bottom surface. A dielectric region includes a second surface not disposed over the first surface.Type: ApplicationFiled: August 14, 2015Publication date: February 16, 2017Inventors: CHUN-WEN CHENG, JUNG-HUEI PENG, CHIA-HUA CHU, NIEN-TSUNG TSAI, YAO-TE HUANG, LI-MIN HUNG, YU-CHIA LIU
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Patent number: 9545691Abstract: According to an exemplary embodiment of the disclosure, a method of removing a waste part of a substrate is provided. The method includes: using a laser to partially drill the substrate to define the waste part; and applying megasonic vibration to the substrate to remove the waste part from the substrate.Type: GrantFiled: December 23, 2013Date of Patent: January 17, 2017Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Chin-Yi Cho, Yi-Chuan Teng, Shang-Ying Tsai, Li-Min Hung, Yao-Te Huang, Jung-Huei Peng
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Publication number: 20160271607Abstract: The present disclosure provides flow cells and methods of fabricating flow cells. The method includes combining three portions: a first substrate, a second substrate, and microfluidic channels between the first substrate and the second substrate having walls of a photoresist dry film. Through-holes for inlet and outlet are formed in the first substrate or the second substrate. Patterned capture sites are stamped on the first substrate and the second substrate by a nanoimprint lithography process. In other embodiments, parts of the patterned capture sites are selectively attached to a surface chemistry pattern formed of silicon oxide islands each disposed on an outcrop of a soft bottom layer.Type: ApplicationFiled: May 27, 2016Publication date: September 22, 2016Inventors: Shang-Ying Tsai, Li-Min Hung, Jung-Huei Peng
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Publication number: 20160157038Abstract: The present disclosure provides one embodiment of an integrated microphone structure. The integrated microphone structure includes a first silicon substrate patterned as a first plate. A silicon oxide layer formed on one side of the first silicon substrate. A second silicon substrate bonded to the first substrate through the silicon oxide layer such that the silicon oxide layer is sandwiched between the first and second silicon substrates. A diaphragm secured on the silicon oxide layer and disposed between the first and second silicon substrates such that the first plate and the diaphragm are configured to form a capacitive microphone.Type: ApplicationFiled: February 8, 2016Publication date: June 2, 2016Inventors: Jung-Huei Peng, Chia-Hua Chu, Chun-wen Cheng, Chin-Yi Cho, Li-Min Hung, Yao-Te Huang
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Patent number: 9352315Abstract: The present disclosure provides flow cells and methods of fabricating flow cells. The method includes combining three portions: a first substrate, a second substrate, and microfluidic channels between the first substrate and the second substrate having walls of a photoresist dry film. Through-holes for inlet and outlet are formed in the first substrate or the second substrate. Patterned capture sites are stamped on the first substrate and the second substrate by a nanoimprint lithography process. In other embodiments, parts of the patterned capture sites are selectively attached to a surface chemistry pattern formed of silicon oxide islands each disposed on an outcrop of a soft bottom layer.Type: GrantFiled: September 27, 2013Date of Patent: May 31, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shang-Ying Tsai, Li-Min Hung, Jung-Huei Peng
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Patent number: 9269679Abstract: In a wafer level chip scale packaging technique for MEMS devices, a deep trench is etched on a scribe line area between two CMOS devices of a CMOS substrate at first. After bonding of the CMOS substrate with a MEMS substrate, the deep trench is opened by thin-down process so that CMOS substrate is singulated while MEMS substrate is not (partial singulation). Electrical test pad on MEMS substrate is exposed and protection material can be filled through the deep trench around bonding layers. After filling the protection material, the wafer is diced to form packaged individual chips with protection from environment outside bonding layer.Type: GrantFiled: November 5, 2013Date of Patent: February 23, 2016Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yi-Chuan Teng, Jung-Huei Peng, Shang-Ying Tsai, Li-Min Hung, Yao-Te Huang, Chin-Yi Cho
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Patent number: 9264833Abstract: The present disclosure provides one embodiment of an integrated microphone structure. The integrated microphone structure includes a first silicon substrate patterned as a first plate; a silicon oxide layer formed on one side of the first silicon substrate; a second silicon substrate bonded to the first substrate through the silicon oxide layer such that the silicon oxide layer is sandwiched between the first and second silicon substrates; and a diaphragm secured on the silicon oxide layer and disposed between the first and second silicon substrates, wherein the first plate and the diaphragm are configured to form a capacitive microphone.Type: GrantFiled: August 22, 2013Date of Patent: February 16, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jung-Huei Peng, Chia-Hua Chu, Yao-Te Huang, Chin-Yi Cho, Li-Min Hung, Chun-Wen Cheng