Abstract: A universal self-locking anatomical plate for posterior of acetabulum and pelvis, which includes a right plate (1), a plurality of screws (2) and a guiding sleeve (3). The right plate (1) includes a region-a, a region-b, a region-c, a region-d and a region-e, which can respectively fix a certain region of an acetabulum, the region-a is provided thereon with three first locking holes for receiving the locking screws, the region-b is provided thereon with at least two second locking holes, the region-c is provided thereon with two positioning holes and twelve third locking holes, the region-d is provided thereon with three fourth locking holes, and the region-e is provided thereon with one fifth locking hole. The plate has an optimized structure, and has three capabilities: good safety, good stability, and biomechanic matching. Additionally, the fitness of the plate to the surface of the acetabulum mode is good.

Abstract: A universal self-locking anatomical plate for posterior of acetabulum and pelvis, which includes a right plate (1), a plurality of screws (2) and a guiding sleeve (3). The right plate (1) includes a region-a, a region-b, a region-c, a region-d and a region-e, which can respectively fix a certain region of an acetabulum, the region-a is provided thereon with three first locking holes for receiving the locking screws, the region-b is provided thereon with at least two second locking holes, the region-c is provided thereon with two positioning holes and twelve third locking holes, the region-d is provided thereon with three fourth locking holes, and the region-e is provided thereon with one fifth locking hole. The plate has an optimized structure, and has three capabilities: good safety, good stability, and biomechanic matching. Additionally, the fitness of the plate to the surface of the acetabulum mode is good.

Abstract: Provided are methods of fabricating a semiconductor device including a metal oxide semiconductor (MOS) transistor. The methods include forming a gate pattern on a semiconductor substrate. The semiconductor substrate is etched using the gate pattern as an etching mask to form a pair of active trenches spaced apart from each other in the semiconductor substrate. Epitaxial layers are formed in the active trenches, respectively. The respective epitaxial layers are formed by sequentially stacking first and second layers. The first and second layers are formed of a semiconductor layer having a lattice constant greater than the semiconductor substrate, and a composition ratio of the second layer is different from that of the first layer. Semiconductor devices having the first and second layers are also provided.

Abstract: The present invention provides an imaging device that generates, for each of a red color, a green color, and a blue color, an image signal having pixels arranged adjacent to each other in a two-dimensional array, including a red color imaging element that senses incident light to output a red color signal (20R) having pixels arranged in a check pattern, a green color imaging element that senses the incident light to output a green color signal (20G) having pixels arranged in a check pattern, a blue color imaging element that senses the incident light to output a blue color signal (20B) having pixels arranged in a check pattern, interpolation means for interpolating a blank pixel using neighboring pixels, and correlation means for determining a correlation of the neighboring pixels of the blank pixel, wherein the correlation means determines a correlation for each of the red color signal, the green color signal, and the blue color signal on the basis of at least one color signal of the red color signal, the gr

Abstract: Provided are methods of fabricating a semiconductor device including a metal oxide semiconductor (MOS) transistor. The methods include forming a gate pattern on a semiconductor substrate. The semiconductor substrate is etched using the gate pattern as an etching mask to form a pair of active trenches spaced apart from each other in the semiconductor substrate. Epitaxial layers are formed in the active trenches, respectively. The respective epitaxial layers are formed by sequentially stacking first and second layers. The first and second layers are formed of a semiconductor layer having a lattice constant greater than the semiconductor substrate, and a composition ratio of the second layer is different from that of the first layer. Semiconductor devices having the first and second layers are also provided.

Abstract: A high voltage assembly including a valve group and a shield connected to the valve group. A resistor is connected between the shield and the valve group The assembly provides an increased breakdown strength and DC withstand level.

Abstract: A power transformer/inductor includes at least one winding. The winding is made of a high voltage cable that includes an electric conductor, and around the electric conductor is arranged a first semiconducting layer, around the first semiconducting layer is an insulating layer, and around the insulating layer is a second semiconducting layer. The second semiconducting layer is directly earthed at both ends of the winding and furthermore at least at two points per turn of every winding such that one or more points are indirectly earthed.

Abstract: The present invention relates to a power transformer/inductor comprising at least one winding. The windings are designed by means of a high-voltage cable, comprising an electric conductor, and around the conductor there is arranged a first semiconducting layer, around the first semiconducting layer there is arranged an insulating layer and around the insulating layer there is arranged a second semiconducting layer. The second semiconducting layer is earthed at or in the vicinity of both ends (261, 262; 281, 282) of each winding and furthermore one point between both ends (261, 262; 281, 282) is directly earthed.

Abstract: A power transformer/inductor includes at least one winding. The winding is made of a high voltage cable that includes an electric conductor, and around the electric conductor is arranged a first semiconducting layer, around the first semiconducting layer is an insulating layer, and around the insulating layer is a second semiconducting layer. The second semiconducting layer is directly earthed at both ends of the winding and furthermore at least at two points per turn of every winding such that one or more points are indirectly earthed.

Abstract: A distributed air gap material for a induction device in power systems for minimizing fringe losses, mechanical losses and noise in the core The distributed air gap material occupies a selected portion of the core and is formed of a finely divided magnetic material in a matrix of a dielectric material particles. The air gap material has a zone of transition in which the permeability values vary within the air gap material.

Abstract: An insulated conductor for high-voltage windings and electric machine, and rotating electric machine that use the insulated conductor. The insulated conductor is suitable for use in a high-voltage winding application for devices such as an electric machine and a rotating electric machine. A feature of the insulated conductor is that the conductor includes at least one strand, and an inner conductive layer that surrounds the at least one strand. An insulating layer surrounds the inner conductive layer, and an outer conductive layer surrounds the insulating layer. When arranged in this manner, and when the outer conductive layer is suitably configured to provide an equipotential surface, the insulated conductor provides relatively high resistance to breakdown when operating at high voltages.

Abstract: A distributed air gap material for a induction device in power systems for minimizing fringe losses, mechanical losses and noise in the core The distributed air gap material occupies a selected portion of the core and is formed of a finely divided magnetic material in a matrix of a dielectric material particles. The air gap material has a zone of transition in which the permeability values vary within the air gap material.

Abstract: An electrode for control of an electric field strength in a gaseous electrically insulating medium at the surface of the electrode and in the vicinity of the electrode, comprising an electrically conducting inner electrode (1′) and an electrically non-conducting layer (8) on at least parts of the surface of the inner electrode, wherein the thickness of the non-conducting layer is at least 5% of the mean diameter of the inner electrode and that the relative dielectric constant of the non-conducting layer is smaller than 3.

Abstract: This invention is related to a device and a method in an electric power plant for protection of an object (1) against over-currents from a network (3) or another equipment included in the high voltage plant, the device comprising a switching device (4) in a line (2) between the object and the network/equipment. The line (2) between the object and the network/equipment is connected to an arrangement (5) reducing over-currents towards the object (1), said arrangement (5) being actuatable for over-current reduction with the assistance of an over-current condition detecting arrangement (11-13) within a time period substantially less than the break-time of the switching device (4).

Abstract: The line section of a gas-insulated line contains a high-voltage electric conductor and a pressure pipe which is made from a thermoplastic material and filled with insulating gas. The pressure pipe holds the electric conductor on insulated supports. The pressure pipe has two pipes which are welded to one another on the end faces thereof, the end section being respectively widened to flare outwardly in the radial direction with the welding of the two pipes.

Abstract: A represents:a CH.sub.2 OH group, and in this case B represents a lower acyl group,a (CH.sub.2).sub.n CN group,a (CH.sub.2).sub.n CHO group,or a (CH.sub.2).sub.(n+1) OH groupin which n is an integer between 1 and 6, R.sub.1 and R.sub.2 being defined in the description. The macrolide compounds are useful as antibacterial agents.

Abstract: Compounds of general formula: ##STR1## where A, B, G, R.sub.2, R.sub.3, R.sub.4 and are defined in the description.Medicinal products comprising a compound of the invention and useful in the treatment of bacterial infections are also disclosed.