Abstract: A probe head includes a probe seat, and vertical probes each having a head portion including a head portion installation section with a first width, and a probe tip section including a probe tip contact part with a second width smaller than the first width and a probe tip gradually narrowing part which is located between the head portion installation section and the probe tip contact part, gradually narrows from the first width to the second width, and has a first length smaller than a second length of the probe tip contact part. The head portion installation section protrudes out of a lower surface of the probe seat for a length smaller than the sum of the first and second lengths. The vertical probe is great in current withstanding capability, structural strength and life time, and meets the requirement of probing tiny electrically conductive contacts.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first insulating layer, a second insulating layer formed over the first insulating layer, and a conductive structure formed within the second insulating layer. The conductive structure includes a metal line having a plane top surface, a bottom surface having a first concave recess portion and a plane portion, and a sidewall adjoining the plane top surface and the plane portion of the bottom surface. The conductive structure also includes a first metal feature formed within the first concave recess. The semiconductor device structure further includes a second metal feature formed below the first insulating layer and electrically connected to the first metal feature.

Abstract: A metal product includes a metal substrate, at least one first hole, at least one second hole, and at least one third hole. The first hole is formed in a surface of the metal substrate. The second hole is formed in at least one of a portion of the surface of the metal substrate without the first hole and an inner surface defining the first hole. The third hole is formed in at least one of a portion of the surface of the metal substrate without the first hole and without the second hole, a portion of the inner surface defining the first hole without the second hole, and an inner surface defining the second hole. The first, second, and third holes enhance a bonding strength between the metal product and a material product. The disclosure also provides a metal composite and a method for manufacturing the metal product.

Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure on the fin structure, forming first and second S/D regions within the superlattice structure, forming a gate structure between the first and second S/D regions, forming first and second contact structures on first surfaces of the first and second S/D regions, and forming a third contact structure, on a second surface of the first S/D region, with a work function metal (WFM) silicide layer and a dual metal liner. The second surface is opposite to the first surface of the first S/D region and the WFM silicide layer has a work function value closer to a conduction band energy than a valence band energy of a material of the first S/D region.

Abstract: In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes a substrate. A gate electrode is over the substrate and a spacer structure laterally surrounds the gate electrode. A conductive via is disposed on the gate electrode. A liner is arranged along one or more sidewalls of the spacer structure. The conductive via has a bottommost surface that has a larger width than a part of the conductive via that is laterally adjacent to one or more interior sidewalls of the liner.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first insulating layer over a substrate. A first metal feature is formed in the first insulating layer and a second insulating layer is formed over the first insulating layer. A first metal via is formed through the second insulating layer to connect the first metal feature. A second metal feature is formed over the second insulating layer. The second metal feature has a convex top surface and a plane bottom surface, and the plane bottom is electrically connected to the first metal feature through the first metal via.

Abstract: A virtual metrology method using a convolutional neural network (CNN) is provided. In this method, a dynamic time warping (DTW) algorithm is used to delete unsimilar sets of process data, and adjust the sets of process data to be of the same length, thereby enabling the CNN to be used for virtual metrology. A virtual metrology model of the embodiments of the present invention includes several CNN models and a conjecture model, in which plural inputs of the CNN model are sets of time sequence data of respective parameters, and plural outputs of the CNN models are inputs to the conjecture model.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a semiconductor fin. The semiconductor device includes first spacers over the semiconductor fin. The semiconductor device includes a metal gate structure, over the semiconductor fin, that is sandwiched at least by the first spacers. The semiconductor device includes a gate electrode contacting the metal gate structure. An interface between the metal gate structure and the gate electrode has its side portions extending toward the semiconductor fin with a first distance and a central portion extending toward the semiconductor fin with a second distance, the first distance being substantially less than the second distance.

Abstract: Semiconductor devices and methods of forming the same are provided. In one embodiment, a semiconductor device includes a gate structure sandwiched between and in contact with a first spacer feature and a second spacer feature, a top surface of the first spacer feature and a top surface of the second spacer feature extending above a top surface of the gate structure, a gate self-aligned contact (SAC) dielectric feature over the first spacer feature and the second spacer feature, a contact etch stop layer (CESL) over the gate SAC dielectric feature, a dielectric layer over the CESL, a gate contact feature extending through the dielectric layer, the CESL, the gate SAC dielectric feature, and between the first spacer feature and the second spacer feature to be in contact with the gate structure, and a liner disposed between the first spacer feature and the gate contact feature.

Abstract: The present disclosure provides a compound shown as formula (I), formula (II), which is used to prepare a radiocontrast tracer that can target binding to Tau protein.

Abstract: A method for achieving sintering of ceramics at room temperature is disclosed. The method includes steps of: providing ceramic green body; placing the ceramic green body into a sealed container containing water vapor to cause the ceramic green body to soak up the water vapor to obtain an aqueous ceramic green body; removing the aqueous ceramic green body from the sealed container, and connecting a power supply to the aqueous ceramic green body; applying a voltage to the aqueous ceramic green body; and increasing the voltage to a predetermined voltage value to cause a surface discharge or an internal discharge to occur on the aqueous ceramic green body, and stopping the power supply after a predetermined time, thereby obtaining a ceramic. A ceramic formed by the method is also disclosed.

Abstract: A pressure tank includes a metallic vessel, a plastic liner received in the metallic vessel, a flexible diaphragm, two connectors and a nozzle coupled to the nipples respectively. The metallic vessel includes upper and lower shells. The upper shell defines a first planar area on a side thereof and a second planar area on a top thereof. The lower shell defines a third planar area thereunder. The flexible diaphragm divides the metallic vessel into a storage space and a pneumatic room. Each of the connectors includes a nipple and an anti-leak assembly. The nipples of the connectors are mounted on the side and top of the upper shell respectively and are in communication with the storage space. The two anti-leak assemblies provide leakproof connection between the nipples and the plastic liner. Additionally, the nozzle is mounted on the third planar area to be in communication with the pneumatic room.

Abstract: A pressure tank includes a metallic vessel, a plastic liner received in the metallic vessel, a flexible diaphragm, two connectors and a nozzle coupled to the nipples respectively. The metallic vessel includes upper and lower shells. The upper shell defines a first planar area on a side thereof and a second planar area on a top thereof. The lower shell defines a third planar area therebottom. The flexible diaphragm divides the metallic vessel into a storage space and a pneumatic room. Each of the connectors includes a nipple and an anti-leak assembly. The nipples of the connectors are mounted on the side and top of the upper shell respectively and are in communication with the storage space. The two anti-leak assemblies provide leakproof connection between the nipples and the plastic liner. Additionally, the nozzle is mounted on the third planar area to be in communication with the pneumatic room.

Abstract: A pressure tank includes a metallic vessel, a plastic liner received in the metallic vessel, a flexible diaphragm, two connectors and a nozzle coupled to the nipples respectively. The metallic vessel includes upper and lower shells. The upper shell defines a first planar area on a side thereof and a second planar area on a top thereof. The lower shell defines a third planar area therebottom. The flexible diaphragm divides the metallic vessel into a storage space and a pneumatic room. Each of the connectors includes a nipple and an anti-leak assembly. The nipples of the connectors are mounted on the side and top of the upper shell respectively and are in communication with the storage space. The two anti-leak assemblies provide leakproof connection between the nipples and the plastic liner. Additionally, the nozzle is mounted on the third planar area to be in communication with the pneumatic room.

Abstract: A pressure tank includes a metallic vessel, a plastic liner received in the metallic vessel, a flexible diaphragm, two connectors and a nozzle coupled to the nipples respectively. The metallic vessel includes upper and lower shells. The upper shell defines a first planar area on a side thereof and a second planar area on a top thereof. The lower shell defines a third planar area therebottom. The flexible diaphragm divides the metallic vessel into a storage space and a pneumatic room. Each of the connectors includes a nipple and an anti-leak assembly. The nipples of the connectors are mounted on the side and top of the upper shell respectively and are in communication with the storage space. The two anti-leak assemblies provide leakproof connection between the nipples and the plastic liner. Additionally, the nozzle is mounted on the third planar area to be in communication with the pneumatic room.

Abstract: A pressure tank includes a metallic vessel, a plastic liner received in the metallic vessel, a flexible diaphragm, two connectors and a nozzle coupled to the nipples respectively. The metallic vessel includes upper and lower shells. The upper shell defines a first planar area on a side thereof and a second planar area on a top thereof. The lower shell defines a third planar area therebottom. The flexible diaphragm divides the metallic vessel into a storage space and a pneumatic room. Each of the connectors includes a nipple and an anti-leak assembly. The nipples of the connectors are mounted on the side and top of the upper shell respectively and are in communication with the storage space. The two anti-leak assemblies provide leakproof connection between the nipples and the plastic liner. Additionally, the nozzle is mounted on the third planar area to be in communication with the pneumatic room.

Abstract: A pressure tank includes a metallic vessel, a plastic liner received in the metallic vessel, a flexible diaphragm, two connectors and a nozzle coupled to the nipples respectively. The metallic vessel includes upper and lower shells. The upper shell defines a first planar area on a side thereof and a second planar area on a top thereof. The lower shell defines a third planar area therebottom. The flexible diaphragm divides the metallic vessel into a storage space and a pneumatic room. Each of the connectors includes a nipple and an anti-leak assembly. The nipples of the connectors are mounted on the side and top of the upper shell respectively and are in communication with the storage space. The two anti-leak assemblies provide leakproof connection between the nipples and the plastic liner. Additionally, the nozzle is mounted on the third planar area to be in communication with the pneumatic room.