Abstract: A light-emitting device includes: an epitaxial structure that has a first surface and a second surface; a first metal electrode that is disposed on the first surface, and that includes a main electrode and extending electrodes; current transmission blocks that are disposed on the second surface, and each having an electrode-facing sidewall and a non-electrode-facing sidewall; and a current blocking layer that is disposed in spaces among the current transmission blocks.

Abstract: A micro light emitting device includes an epitaxial structure, a conductive layer, and a first insulating layer. The epitaxial structure has a first surface and a second surface opposite to the first surface, and includes a first semiconductor layer, an active layer and a second semiconductor layer that are arranged in such order in a direction from the first surface to the second surface. The conductive layer is formed on a surface of the first semiconductor layer away from the active layer. The first insulating layer is formed on the surface of the first semiconductor layer away from the active layer, and exposes at least a part of the conductive layer.

Abstract: An IC structure includes a transistor, a source/drain contact, a metal oxide layer, a non-metal oxide layer, a barrier structure, and a via. The transistor includes a gate structure and source/drain regions on opposite sides of the gate structure. The source/drain contact is over one of the source/drain regions. The metal oxide layer is over the source/drain contact. The non-metal oxide layer is over the metal oxide layer. The barrier structure is over the source/drain contact. The barrier structure forms a first interface with the metal oxide layer and a second interface with the non-metal oxide layer, and the second interface is laterally offset from the first interface. The via extends through the non-metal oxide layer to the barrier structure.

Abstract: A light-emitting device includes an epitaxial structure having a first surface and a second surface that is opposite to the first surface. The epitaxial structure includes, along a first direction from the first surface to the surface, a first-type semiconductor layer, an active layer, and a second-type semiconductor layer including a capping layer. The capping layer includes at least Ni number of sub-layers arranged in the first direction, where N1?2. Each of the sub-layers of the capping layer contains a material represented by Aly1Ga1-y1InP, where 0<y1?1. The capping layer has an Al content which increases and then remains constant along the first direction. A light-emitting apparatus includes the light-emitting device is also provided.

Abstract: The invention relates generally to recombinant human sialidases and recombinant sialidase fusion proteins, wherein the sialidase optionally contains one or more mutations compared to wild-type human sialidase, e.g., a substitution, deletion, or addition of at least one amino acid. The invention also provides antibody conjugates including a sialidase and an antibody or a portion thereof. The invention further relates to methods of using the sialidase fusion proteins or antibody conjugates for treating cancer.

Abstract: The present application provides a mask assembly and a display device. The display device comprises a display area and at least one non-display area, the display area surrounding the non-display area; the display device further comprises a transitional-display area adjoining the non-display area as well as the display area, respectively, wherein both the display area and the transitional-display area are used to display static or dynamic images; a thickness of a first electrode in the transitional-display area is smaller than or equal to a thickness of the first electrode in the display area. The presence of the transitional-display area prevents incomplete display caused by incomplete coverage of the evaporation material in the display device, such as black-edged display formed in an area where a connection bridge is located, thereby improving the display integrity.

Abstract: The present disclosure provides a direct current (DC) transformer error detection apparatus for a pulsating harmonic signal, including a DC and pulsating harmonic current output module and an external detected input module, where the DC and pulsating harmonic current output module outputs a DC and a DC superimposed pulsating harmonic current to an internal sampling circuit and a self-calibrated standard resistor array; and the internal sampling circuit converts the input DC and the input DC superimposed pulsating harmonic current into a voltage signal, and sends the voltage signal to an analog-to-digital (AD) sampling and measurement component through a front-end conditioning circuit and a detected input channel. The DC transformer error detection apparatus can complete self-calibration for measurement of the DC and the pulsating harmonic signal on a test site.

Abstract: A system for manufacturing an integrated circuit includes a processor coupled to a non-transitory computer readable medium configured to store executable instructions. The processor is configured to execute the instructions for generating a layout design of the integrated circuit that has a set of design rules. The generating of the layout design includes generating a set of gate layout patterns corresponding to fabricating a set of gate structures of the integrated circuit, generating a cut feature layout pattern corresponding to a cut region of a first gate of the set of gate structures of the integrated circuit, generating a first conductive feature layout pattern corresponding to fabricating a first conductive structure of the integrated circuit, and generating a first via layout pattern corresponding to a first via. The cut feature layout pattern overlaps a first gate layout pattern of the set of gate layout patterns.

Abstract: Provided is an automatic air-release box lid, including: a box lid body provided with an air hole, the air hole being configured as a through-hole structure, openings at two ends of the air hole being located on an upper surface and a lower surface of the box lid body respectively; and a fastening lug having a rotating shaft part by which the fastening lug is hinged to the upper surface of the box lid body, the rotating shaft part and one opening of the air hole being arranged corresponding to each other and one above the other, the rotating shaft part having a blocking surface. Further provided is a preservation box, including: an automatic air-release box lid and a box body. The box lid is fitted to cover the box body.

Abstract: The present application provides an audio and video playing system, a playing method and a playing device. The system comprises: a display device; a directional sound output module configured to output a directional sound signal; a tracking element configured to monitor a target visual area and to monitor the target display area on the display screen; and a processor, connected with the directional sound output module and the tracking element respectively, and configured to acquire a first audio and video data to be output in the target display area, display image information of the first audio and video data in the target display area, and output sound information of the first audio and video data to the directional sound output module such that the directional sound output module output a directional sound signal towards the target visual area.

Abstract: A semiconductor structure is provided and includes a first gate structure, a second gate structure, and at least one local interconnect that extend continuously across a non-active region from a first active region to a second active region. The semiconductor structure further includes a first separation spacer disposed on the first gate structure and first vias on the first gate structure. The first vias are arranged on opposite sides of the first separation spacer are isolated from each other and apart from the first separation spacer by different distances.

Abstract: The present invention provides a silicon capacitor structure, including a substrate, an interlayer dielectric (ILD) layer on the substrate, a capacitor recess extending from a surface of the ILD layer into the substrate, a capacitor in the capacitor recess, wherein the capacitor includes a bottom electrode on a surface of the capacitor recess, a capacitive dielectric layer on a surface of the bottom electrode, and a top electrode on a surface of the capacitive dielectric layer and filling up the capacitor recess.

Abstract: A tuning method for a collimator of a CT machine, which, in each cycle of X-ray scan operation and stop, may include determining whether an X-ray is generated from the anode plate; calculating the Z-direction heating displacement of the slot plate during the current scan based on a detected X-ray, driving the slot plate to move by the heating displacement in the Z-direction, calculating the total Z-direction heating displacement of the slot plate at the end of the current scan, calculating the cooling displacement of the slot plate during the current stop based on the stop time of the X-ray, and driving the slot plate to move.

Abstract: A semiconductor device comprises a fin structure disposed over a substrate; a gate structure disposed over part of the fin structure; a source/drain structure, which includes part of the fin structure not covered by the gate structure; an interlayer dielectric layer formed over the fin structure, the gate structure, and the source/drain structure; a contact hole formed in the interlayer dielectric layer; and a contact material disposed in the contact hole. The fin structure extends in a first direction and includes an upper layer, wherein a part of the upper layer is exposed from an isolation insulating layer. The gate structure extends in a second direction perpendicular to the first direction. The contact material includes a silicon phosphide layer and a metal layer.

Abstract: The disclosure provides a Sense Amplifier (SA), a memory and a method for controlling the SA, and relates to the technical field of semiconductor memories. The SA includes: an amplifier module; an offset voltage storage unit electrically connected to the amplifier module and configured to store an offset voltage of the amplifier module in an offset elimination stage of the SA; and a load compensation unit electrically connected to the amplifier module and configured to compensate a difference between loads of the amplifier module in an amplification stage of the SA. The disclosure may improve an accuracy of reading data of the SA.

Abstract: The invention relates generally to anti-PD-L1 antibodies, and recombinant sialidase and anti-PD-L1 immunoglobulin antigen-binding domain fusion proteins. The invention also provides antibody conjugates including a sialidase and an anti-PD-L1 antibody or a portion thereof. The invention further relates to methods of using the antibodies, sialidase fusion proteins, or antibody conjugates for treating cancer.

Abstract: A method for aging and storage of Jiang-flavor raw liquor involves “growing, nourishing and storing.” The Jiang-flavor new liquors of different rounds are subjected to outdoor storage in jars for not more than 1 year, then the Jiang-flavor raw liquors of different rounds having experienced the outdoor storage in jars for not more than 1 year are blended and put into stainless steel tank for blending and aging for a period of 1 to 2 years, and finally the Jiang-flavor raw liquor having experiencing the blending and ageing in the stainless steel tank for 1 to 2 years undergoes indoor storage in jars for 2 to 10 years. The method combines different storage containers with different storage years, improving the aging and storage effect and the quality of the Jiang-flavor raw liquor in a targeted manner.

Abstract: Described herein is a polyurethane having an isocyanate group and having C—C double bonds on a side chain, a process for preparing such a polyurethane, and an UV-moisture dual cure polyurethane reactive hotmelt including the polyurethane.

Abstract: The invention relates generally to recombinant sialidase and anti-HER2 immunoglobulin antigen-binding domain fusion proteins. The invention also provides antibody conjugates including a sialidase and an anti-HER2 antibody or a portion thereof. The invention further relates to methods of using the sialidase fusion proteins or antibody conjugates for treating cancer.