Abstract: The present invention comprises a thermally-conductive and electrically-conductive substrate, a bonding layer, a galvanic isolation layer, a P-type electrode, a P-type Bragg reflection layer, a diode light-emitting layer, an N-type Bragg band-pass reflection layer and an N-type electrode stacked in sequence. The galvanic isolation layer comprises a cylindrical opening for accommodating the diode light-emitting layer. The N-type electrode comprises a light-output opening facing the cylindrical opening and completely covering the cylindrical opening. When current input by the N-type electrode passes through the N-type Bragg band-pass reflection layer, it is concentrated under constraint of the galvanic isolation layer and passes through the diode light-emitting layer via the cylindrical opening according to correspondence in position and size of the cylindrical opening and the light-output opening.

Abstract: The invention provides a light emitting chip comprising a conductive carrier, a semiconductor layer body having a first semiconductor layer, a second semiconductor layer, and a radiation emitting layer, wherein the semiconductor layer has a concave part extending from the surface of the first semiconductor layer through the radiation emitting layer toward the second semiconductor layer; a first electrical connection layer electrically connected between the first semiconductor layer and the first electrode; a second electrical connection layer electrically connected between the second semiconductor layer and the conductive carrier, wherein the second electrical connection layer includes a continuous electrode structure connected to the second semiconductor layer, the continuous electrode structure being constituted by at least a frame structure distributed at the edge of the light emitting chip; and a second electrode electrically connected to the conductive carrier.

Abstract: The present invention is a surface emitting laser luminescent diode structure which is characterized in that a recess comprises two tilted slopes on two sides and a protruding trapezoidal cylinder located at the bottom center of the recess is disposed at the bottom of a laser resonant cavity. Thus, a reflecting mirror disposed along the surface of the recess includes two tilted side surfaces as leak-proof sides, which reduces the divergence angle and avoid the lateral light leakage. Additionally, a current isolating layer is disposed on the reflecting mirror and is designed to satisfy the condition (¼*wavelength*1/refractive index) of an optical film, thereby allowing the reflecting mirror to receive an excellent reflectance. Besides, the current isolating layer limits the flow direction of the current, thus increasing operating speed.

Abstract: The invention provides a light emitting chip comprising a conductive carrier, a semiconductor layer body having a first semiconductor layer, a second semiconductor layer, and a radiation emitting layer, wherein the semiconductor layer has a concave part extending from the surface of the first semiconductor layer through the radiation emitting layer toward the second semiconductor layer; a first electrical connection layer electrically connected between the first semiconductor layer and the first electrode; a second electrical connection layer electrically connected between the second semiconductor layer and the conductive carrier, wherein the second electrical connection layer includes a continuous electrode structure connected to the second semiconductor layer, the continuous electrode structure being constituted by at least a frame structure distributed at the edge of the light emitting chip; and a second electrode electrically connected to the conductive carrier.

Abstract: The present invention is a surface emitting laser luminescent diode structure which is characterized in that a recess comprises two tilted slopes on two sides and a protruding trapezoidal cylinder located at the bottom center of the recess is disposed at the bottom of a laser resonant cavity. Thus, a reflecting mirror disposed along the surface of the recess includes two tilted side surfaces as leak-proof sides, which reduces the divergence angle and avoid the lateral light leakage. Additionally, a current isolating layer is disposed on the reflecting mirror and is designed to satisfy the condition (¼*wavelength*1/refractive index) of an optical film, thereby allowing the reflecting mirror to receive an excellent reflectance. Besides, the current isolating layer limits the flow direction of the current, thus increasing operating speed.

Abstract: An optoelectronic semiconductor includes a carrier, a semiconductor main body having a first semiconductor layer, a second semiconductor layer, and a radiation emitting layer for generating electromagnetic radiation, the semiconductor main body having at least one recess extending through the radiation emitting layer; a first electrode and a second electrode; a first electrical connection layer electrically connected between the first semiconductor layer and the first electrode; a second electrical connection layer electrically connected between the second semiconductor layer and the second electrode and extending through the recess from the carrier to the second semiconductor layer; and a zener diode structure disposed between the first electrical connection layer and the second electrical connection layer so that the first electrical connection layer and the second electrical connection layer are electrically dependent, wherein at least a portion of the zener diode structure is located in a current path bet

Abstract: A present invention includes a negative electrode, a substrate, an adhesive layer, an insulation layer and a reflective layer sequentially stacked. A P-type semiconductor layer, a light emitting layer and an N-type semiconductor layer are sequentially stacked on the reflective layer to form an LED light emitting layer. A positive electrode, spaced from the LED light emitting layer, is further stacked on the reflective layer. The present invention further includes an electrical connection structure that penetrates through the insulation layer, and penetrates through, in a spaced manner from the insulation layer, the reflective layer, the P-type semiconductor layer and the light emitting layer. The electrical connection structure is electrically connected to the adhesive layer and the N-type semiconductor layer, and has a pattern distribution. The pattern distribution is least one strip-like shape to form the continuous electrode structure.

Abstract: A present invention includes a negative electrode, a substrate, an adhesive layer, an insulation layer and a reflective layer sequentially stacked. A P-type semiconductor layer, a light emitting layer and an N-type semiconductor layer are sequentially stacked on the reflective layer to form an LED light emitting layer. A positive electrode, spaced from the LED light emitting layer, is further stacked on the reflective layer. The present invention further includes an electrical connection structure that penetrates through the insulation layer, and penetrates through, in a spaced manner from the insulation layer, the reflective layer, the P-type semiconductor layer and the light emitting layer. The electrical connection structure is electrically connected to the adhesive layer and the N-type semiconductor layer, and has a pattern distribution. The pattern distribution is least one strip-like shape to form the continuous electrode structure.

Abstract: An optoelectronic semiconductor includes a carrier, a semiconductor main body having a first semiconductor layer, a second semiconductor layer, and a radiation emitting layer for generating electromagnetic radiation, the semiconductor main body having at least one recess extending through the radiation emitting layer; a first electrode and a second electrode; a first electrical connection layer electrically connected between the first semiconductor layer and the first electrode; a second electrical connection layer electrically connected between the second semiconductor layer and the second electrode and extending through the recess from the carrier to the second semiconductor layer; and a zener diode structure disposed between the first electrical connection layer and the second electrical connection layer so that the first electrical connection layer and the second electrical connection layer are electrically dependent, wherein at least a portion of the zener diode structure is located in a current path bet

Abstract: A structure is presented as a laminar structure having a first electrode, light-emitting diode epitaxial layer, silver reflecting layer, current barrier layer, metallic buffer layer, bonding layer, substrate and second electrode in turn, the silver reflecting layer covering the light-emitting diode epitaxial layer and having a bare region distributed as a pattern, the bare region being filled with a high temperature enduring reflecting material, the current barrier layer being patterned to be distributed over the silver reflecting layer in correspondence with the bare region, the metallic buffer layer separating the current barrier layer while covering the silver reflecting layer, whereby high temperature generated by the current barrier layer is sustained by the reflecting material to prevent the silver reflecting layer from cracking when being contacted with the high temperature of the current barrier layer and then ensure luminous efficiency of the light-emitting diode.

Abstract: The present invention includes an N-type semiconductor layer, an active layer, a P-type semiconductor layer, a metal mirror layer, a protection adhesive layer and a metal buffer layer that are sequentially stacked. The protection adhesive layer is selected from a group consisting of a metal oxide and a metal nitride, fully covers one side of the metal mirror layer away from the P-type semiconductor layer, and includes a plurality of conductive holes. The metal buffer layer penetrates through the conductive holes to be electrically connected to the metal mirror layer. After forming the metal mirror layer on the P-type semiconductor layer, the protection adhesive layer that fully covers the metal mirror layer is directly formed to thoroughly protect the metal mirror layer by using the protection adhesive layer, thereby maintaining a reflection rate of the metal mirror layer and ensuring light emitting efficiency of a light emitting diode.

Abstract: The present invention includes an N-type semiconductor layer, an active layer, a P-type semiconductor layer, a metal mirror layer, a protection adhesive layer and a metal buffer layer that are sequentially stacked. The protection adhesive layer is selected from a group consisting of a metal oxide and a metal nitride, fully covers one side of the metal mirror layer away from the P-type semiconductor layer, and includes a plurality of conductive holes. The metal buffer layer penetrates through the conductive holes to be electrically connected to the metal mirror layer. After forming the metal mirror layer on the P-type semiconductor layer, the protection adhesive layer that fully covers the metal mirror layer is directly formed to thoroughly protect the metal mirror layer by using the protection adhesive layer, thereby maintaining a reflection rate of the metal mirror layer and ensuring light emitting efficiency of a light emitting diode.

Abstract: A semiconductor light-emitting device including an epitaxial structure, a first electrode structure, a second electrode structure, a light reflective metal layer, a resistivity-enhancing structure and a protection ring is provided. The light-emitting epitaxial structure has a first surface and a second surface. The light-emitting epitaxial structure has a first zone and a second zone. The first electrode structure is disposed within the first zone. The second electrode structure is disposed within the second zone. The light reflective metal layer is disposed adjacent to the second surface. The resistivity-enhancing structure is disposed in contact with a surface of the light reflective metal layer and corresponding to a position of the first electrode structure. The protection ring has a first portion and a second portion. The first portion surrounds a sidewall of the light reflective metal layer. The second portion corresponds to the second electrode structure.

Abstract: A semiconductor light-emitting device including an epitaxial structure, a first electrode structure, a second electrode structure, a light reflective metal layer, a resistivity-enhancing structure and a protection ring is provided. The light-emitting epitaxial structure has a first surface and a second surface. The light-emitting epitaxial structure has a first zone and a second zone. The first electrode structure is disposed within the first zone. The second electrode structure is disposed within the second zone. The light reflective metal layer is disposed adjacent to the second surface. The resistivity-enhancing structure is disposed in contact with a surface of the light reflective metal layer and corresponding to a position of the first electrode structure. The protection ring has a first portion and a second portion. The first portion surrounds a sidewall of the light reflective metal layer. The second portion corresponds to the second electrode structure.

Abstract: An LED electrode contact structure for an LED is provided. The LED includes a plurality of N-type electrodes, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a mirror layer, a buffer layer, a binding layer, a permanent substrate and a P-type electrode that are stacked in sequence. The N-type semiconductor layer has an irregular surface and a plurality of contact platforms. The contact platforms are formed and distributed on the N-type semiconductor layer in a patterned arrangement, and the irregular surface is formed at areas on the N-type semiconductor layer without the contact platforms. The N-type electrodes are respectively formed on the contact platforms. The contact platforms have roughness between 0.01 ?m and 0.1 ?m, such that not only voids are not generated but also good adhesion is provided to prevent carrier confinement and disengagement. Therefore, satisfactory electrical contact is ensured to thereby increase light emitting efficiency.

Abstract: A semiconductor light-emitting device including an epitaxial structure, a first electrode structure, a second electrode structure, a light reflective metal layer, a resistivity-enhancing structure and a protection ring is provided. The light-emitting epitaxial structure has a first surface and a second surface. The light-emitting epitaxial structure has a first zone and a second zone. The first electrode structure is disposed within the first zone. The second electrode structure is disposed within the second zone. The light reflective metal layer is disposed adjacent to the second surface. The resistivity-enhancing structure is disposed in contact with a surface of the light reflective metal layer and corresponding to a position of the first electrode structure. The protection ring has a first portion and a second portion. The first portion surrounds a sidewall of the light reflective metal layer. The second portion corresponds to the second electrode structure.

Abstract: A semiconductor light-emitting device comprises a light-emitting epitaxial structure, a first electrode structure, a light reflective layer and an resistivity-enhancing structure. The light-emitting epitaxial structure has a first surface and a second surface opposite to the first surface. The first electrode structure is electrically connected to the first surface. The light reflective layer is disposed adjacent to the second surface. The resistivity-enhancing structure is disposed adjacent to the light reflective layer and away from the second surface corresponding to a position of the first electrode structure.

Abstract: A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes a buffer layer, a light-emitting layer, a first-conductivity semiconductor layer, a first light reflecting layer, a protective structure, and an adhesive layer. The first-conductivity semiconductor layer is disposed between the buffer layer and a first side of the light-emitting layer. The first light reflecting layer is disposed between the first-conductivity semiconductor layer and the buffer layer. The protective structure is disposed between the first reflecting layer and the buffer layer. The adhesive layer is disposed between the first-conductivity semiconductor layer and the protective structure.