Abstract: Improved oxygen reduction reaction catalysts include octahedral nanoparticles of a platinum-copper-nickel alloy contacted by a secondary ionomer. The alloy can have a formula of Pt2CuNi, and the secondary ionomer can include an ionic liquid, 1-methyl-2,3,4,6,7,8-hexahydro-1H-pyrimido[1,2-a]pyrimidin-9-ium 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate ([MTBD][C4F9SO3]). The oxygen reductions catalysts have improved stability, as well as mass area and specific area comparted to competing catalysts.

Abstract: Improved oxygen reduction reaction catalysts include octahedral nanoparticles of a platinum-copper-nickel alloy contacted by a secondary ionomer. The alloy can have a formula of Pt2CuNi, and the secondary ionomer can include an ionic liquid, 1-methyl-2,3,4,6,7,8-hexahydro-1H-pyrimido[1,2-a]pyrimidin-9-ium 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate ([MTBD][C4F9SO3]). The oxygen reductions catalysts have improved stability, as well as mass area and specific area comparted to competing catalysts.

Abstract: Silicon oxide and electrically conductive doped silicon materials are sintered in a protective environment to yield a composite SiOx:Si material that exhibits the properties of SiOx, and yet is electrically conductive due to the presence of Si. Such a composite material finds many uses, such as a target for DC and/or AC sputtering processes to produce silicon oxide thin films for touch-screen applications, barrier thin films in LCD displays and optical thin films used in a wide variety of applications.

Abstract: Silicon oxide and electrically conductive doped silicon materials are joined in a protective environment to yield a composite SiOx:Si material that exhibits the properties of SiOx, and yet is electrically conductive due to the presence of the Si. Such a composite material finds use as a target for DC and/or AC sputtering processes to produce silicon oxide thin films for touch-screen applications, barrier thin films in LCD displays and optical thin films used in a wide variety of applications.

Abstract: Article are made from silicon oxide and electrically conductive doped silicon materials that are joined in a protective environment to yield a composite SiOx:Si material that exhibits the properties of SiOx and yet is electrically conductive due to the presence of the Si. Articles from such composite materials find many uses, such as for targets for DC and/or AC sputtering processes to produce silicon oxide thin films for touch-screen application, barrier thin films in LCD displays and optical thin films used in a wide variety of applications.

Abstract: An AC or DC sputtering target for depositing thin films of chromium sub oxides on a substrate contains oxides of chromium, chromium metal and incorporated oxygen. The target has a resistivity of 200?·cm or less. The target can be made from a combination of oxides of chromium powder and chromium metal, such as in powder form, or can be made starting with 100% chromium oxide or sub oxide material that is subjected to a reducing atmosphere either before or during the process of making the target in order to reduce a fraction of the chromium oxide and/or sub oxide material to chromium metal and retained oxygen. Such a target can enable the sputtering process to be conducted using inert argon gas only to yield a thin film of chromium oxide. This enables the surface of the target to remain in a continuously stable condition and free of the arcing problems associated with using chromium targets and argon and oxygen gas.