Abstract: A method of making a grating, the method including: providing a substrate, placing a first photoresist layer on the substrate, locating a second photoresist layer on the first photoresist layer, wherein a second exposure dose of the second photoresist layer is greater than a first exposure dose of the first photoresist layer; exposing the first photoresist layer and the second photoresist layer; developing the first photoresist layer and the second photoresist layer and removing an exposed photoresist to form a patterned photoresist layer and obtain an exposed surface of the substrate, wherein the patterned photoresist layer defines a plurality of top surfaces and a plurality of side surfaces, each adjacent top surface and side surface, and the exposed surface form a Z-type surface; depositing a preformed layer on the Z-type surface to form a Z-type structure; removing the patterned photoresist layer.

Abstract: A method of making thin film transistor including: forming a gate electrode, forming a gate insulating layer on the gate electrode; locating a semiconductor layer on the gate insulating layer; placing stripe-shaped masks on the semiconductor layer, wherein the thickness of the stripe-shaped masks is H, the spacing distance between the stripe-shaped masks is L; depositing a first conductive film layer along a first direction, the thickness of the first conductive film layer is D, a first angle between the first direction and a direction along the thickness of the stripe-shaped masks is ?1, ?1<tan?1(L/H); depositing a second conductive film layer along a second direction, a second angle between the second direction and the direction along the thickness of the stripe-shaped masks is ?2, ?2<tan?1[L/(H+D)], 0<Htan?1+(H+D)tan?2?L<10 nm, the first conductive film layer forms a source electrode, the second conductive film layer forms a drain electrode.

Abstract: A method of making nanoscale channels including: providing a substrate, locating a photoresist mask layer on the substrate, the thickness of the photoresist mask layer equals H; forming a patterned mask layer by exposing and developing the photoresist mask layer, the patterned mask layer includes a plurality of parallel and spaced stripe masks, the spacing between adjacent stripe masks equals L; depositing a first thin film layer on the substrate in a first direction, the thickness of the first thin film layer equals D, a first angle between the first direction and a direction in the thickness of the stripe masks equals ?1, ?1<tan?1(L/H); depositing a second thin film layer on the substrate in a second direction, a second angle between the second direction and the direction in the thickness of the stripe masks equals ?2, ?2<tan?1[L/(H+D)], 0<Htan?1+(H+D)tan?2?L<10 nm.

Abstract: Collecting online group chat messages. An embodiment of the invention may include determining a received message satisfies at least one of a plurality of message collection rules. The embodiment may also include recording the received message to at least one of a plurality of message tables based on each of a plurality of chat participants mentioned in the received message. The embodiment may further include determining a first chat participant within the plurality of chat participants chooses to open a private chat session with a second chat participant within the plurality of chat participants. The embodiment may also include identifying a plurality of recorded messages within the plurality of message tables where the first chat participant typed a screen name or a given name for the second chat participant and where the second chat participant typed a screen name or a given name of the first chat participant.

Abstract: A method of making nanoscale belts including: providing a semiconductor thin film, placing stripe masks on the semiconductor thin film, the thickness of the stripe masks is H, the spacing distance between adjacent stripe masks is L; depositing a first thin film layer along a first direction, the thickness of the first thin film layer is D, a first angle between first direction and a direction along thickness of the stripe masks is ?1, ?1<tan?1(L/H); depositing a second thin film layer along a second direction, a second angle between second direction and the direction along thickness of the stripe masks is ?2, ?2<tan?1[L/(H+D)], 0<L?H tan ?1?(H+D)tan ?2<10 nm, the first thin film layer partly overlaps with the second thin film layer to form an overlapping structure; dry etching the first thin film layer and the second thin film layer to obtain a nanoscale microstructure; etching the semiconductor thin film.

Abstract: A method of making nanostructures including: locating a photoresist mask layer on a substrate, the thickness of the photoresist mask layer is H; forming a patterned mask layer includes a plurality of stripe masks, a spacing distance between adjacent stripe masks equals L; depositing a first thin film layer along a first direction, the thickness of the first thin film layer is D, a first angle between the first direction and a direction along the thickness of stripe masks is ?1, ?1<tan?1(L/H); depositing a second thin film layer along a second direction, a second angle between the second direction and the direction along the thickness of stripe masks is ?2, ?2<tan?1[L/(H+D)], 0<L?H tan ?1?(H+D)tan?2<10 nm, the first thin film layer partly overlaps with the second thin film layer to form an overlapping structure; etching the first thin film layer and the second thin film layer to obtain a nanoscale microstructure.

Abstract: An apparatus for fabricating the magnesium-based alloy includes a transferring device, a thixomolding machine, and an electromagnetic stirring device. The transferring device includes a feed inlet. The thixomolding machine includes a heating barrel having a first end and a second end, a nozzle disposed at the first end. The electromagnetic stirring device includes an electromagnetic induction coil disposed on an outer wall of the heating barrel.

Abstract: A method for fabricating a magnesium-based alloy includes the steps of: (a) mixing a number of carbon nanotubes with a number of magnesium particles; (b) heating the mixture in a protective gas to achieve a semi-solid-state paste; (c) stirring the semi-solid-paste using an electromagnetic stirring force to disperse the carbon nanotubes into the paste; (d) injecting the semi-solid-state paste into a die; and (e) cooling the semi-solid-state paste to achieve a magnesium-based alloy. An apparatus for fabricating the magnesium-based alloy includes a transferring device, a thixomolding machine, and an electromagnetic stirring device. The transferring device includes a feed inlet. The thixomolding machine includes a heating barrel having two ends, a nozzle disposed at a first end thereof, and an material input positioned at a second end thereof. The electromagnetic stirring device includes an electromagnetic induction coil disposed on an outer wall of the heating barrel.

Abstract: The present invention relates to a powder extinguishing agent used for extinguishing fires of burning light metals. The powder extinguishing agent includes: potassium chloride in an amount from 40% to 50% by weight, sodium chloride in an amount from 45% to 55% by weight, and calcium fluoride in an amount from 2% to 8% by weight. The present invention also relates to a method for manufacturing the powder extinguishing agent.

Abstract: A method for fabricating a magnesium-based alloy includes the steps of: (a) mixing a number of carbon nanotubes with a number of magnesium particles; (b) heating the mixture in a protective gas to achieve a semi-solid-state paste; (c) stirring the semi-solid-paste using an electromagnetic stirring force to disperse the carbon nanotubes into the paste; (d) injecting the semi-solid-state paste into a die; and (e) cooling the semi-solid-state paste to achieve a magnesium-based alloy. An apparatus for fabricating the magnesium-based alloy includes a transferring device, a thixomolding machine, and an electromagnetic stirring device. The transferring device includes a feed inlet. The thixomolding machine includes a heating barrel having two ends, a nozzle disposed at a first end thereof, and an material input positioned at a second end thereof. The electromagnetic stirring device includes an electromagnetic induction coil disposed on an outer wall of the heating barrel.