Patents by Inventor Li Ru Chen

Li Ru Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240161818
    Abstract: The invention provides a layout pattern of static random access memory (SRAM), which at least comprises a plurality of gate structures located on a substrate and spanning the plurality of fin structures to form a plurality of transistors distributed on the substrate, wherein the plurality of transistors comprise two pull-up transistors (PU), two pull-down transistors (PD) to form a latch circuit, and two access transistors (PG) connected to the latch circuit. In each SRAM memory cell, the fin structure included in the pull-up transistor (PU) is defined as a PU fin structure, the fin structure included in the pull-down transistor (PD) is defined as a PD fin structure, and the fin structure included in the access transistor (PG) is defined as a PG fin structure, wherein a width of the PD fin structure is wider than a width of the PG fin structure.
    Type: Application
    Filed: November 30, 2022
    Publication date: May 16, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Hsien Huang, Yu-Tse Kuo, Shu-Ru Wang, Li-Ping Huang, Yu-Fang Chen, Chun-Yen Tseng, Tzu-Feng Chang, Chun-Chieh Chang
  • Patent number: 11915755
    Abstract: A layout of a semiconductor memory device includes a substrate and a ternary content addressable memory (TCAM). The TCAM is disposed on the substrate and includes a plurality of TCAM bit cells, where at least two of the TCAM bit cells are mirror-symmetrical along an axis of symmetry, and each of the TCAM bit cells includes two storage units electrically connected to two word lines respectively, and a logic circuit electrically connected to the storage units. The logic circuit includes two first reading transistors, and two second reading transistors, where each of the second reading transistors includes a gate and source and drain regions, the source and drain regions of the second reading transistors are electrically connected to two matching lines and the first reading transistors, respectively, where the word lines are disposed parallel to and between the matching lines.
    Type: Grant
    Filed: January 20, 2022
    Date of Patent: February 27, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Yen Tseng, Yu-Tse Kuo, Shu-Ru Wang, Chun-Hsien Huang, Hsin-Chih Yu, Meng-Ping Chuang, Li-Ping Huang, Yu-Fang Chen
  • Publication number: 20200337415
    Abstract: A heel structure with an adjustable height includes a support rod, adjustment rod, and retractable element. The support rod is penetrated by a through hole. Tracks and engaging grooves are disposed on the wall of the through hole. The engaging grooves are in communication with the tracks and run horizontally. The adjustment rod penetrates the through hole and undergoes displacement. Resilient engaging bumps are disposed above the adjustment rod and thus resiliently pressed within the tracks. The tracks abut against the engaging bumps such that the engaging bumps retract. The retractable element is rotated such that circular pipes of different diameters decreasing downward and stepwise are fitted together so as to be folded and unfolded. A hollow-core mounting region is defined centrally at the circular pipes. A fitting hole is disposed at the lowest circular pipe and fixedly disposed on an outer wall of the bottom of the adjustment rod.
    Type: Application
    Filed: June 28, 2019
    Publication date: October 29, 2020
    Inventor: Li Ru Chen