Abstract: A method includes forming a first conductive feature over a semiconductor substrate, forming an ILD layer over the first conductive feature, patterning the ILD layer to form a trench, and forming a conductive layer over the patterned ILD layer to fill the trench. The method further includes polishing the conductive layer to form a via contact configured to interconnect the first conductive feature with a second conductive feature, where polishing the conductive layer exposes a top surface of the ILD layer, polishing the exposed top surface of the ILD layer, such that a top portion of the via contact protrudes from the exposed top surface of the ILD layer, and forming the second conductive feature over the via contact, such that the top portion of the via contact extends into the second conductive feature.

Abstract: The invention provides a cover tape and the method for manufacturing the same. The cover tape comprises an antistatic layer, two intermediate layers, a base layer, two tie layers and a heat seal layer. These seven layers are formed by a co-extrusion process.

Abstract: The invention provides a locomotive solid-state device and an implantable medical system having the same. The locomotive solid-state device comprises a substrate, a signal receiving unit and a micro-controller. On the substrate at least one electrode is formed, and the signal receiving unit receives a plurality of electrical signals. The micro-controller electrically controls the electrode, in which the voltage applied on each electrode according to the electrical signals received by the signal receiving unit, so that the locomotive solid-state device moves along at least one direction.

Abstract: A chemical mechanical polishing apparatus and a chemical mechanical polishing method thereof are provided. The chemical mechanical polishing method at least includes the following steps. In step a, a positive pressure is formed between a polishing pad and a wafer. In step b, the wafer is driven to revolve around a first central axis. In step c, a polishing slurry is injected between the polishing pad and the wafer. In step d, the positive pressure formed on the wafer by the polishing pad is adjusted for change the contacting modes of the polishing pad and the wafer as well as the wafer removal rate.