Abstract: An N-type organic thin film transistor, an ambipolar field-effect transistor, and methods of fabricating the same are disclosed. The N-type organic thin film transistor of the present invention comprises: a substrate; a gate electrode locating on the substrate; a gate-insulating layer covering the gate electrode, and the gate-insulating layer is made of silk protein; a buffering layer locating on the gate-insulating layer, and the buffering layer is made of pentacene; an N-type organic semiconductor layer locating on the buffering layer; and a source and a drain electrode, wherein the N-type organic semiconductor layer, the buffering layer, the source and the drain electrode are disposed over the gate dielectric layer.

Abstract: An organic floating gate memory device having protein and a method of fabricating the same are disclosed.

Abstract: An electronic device including a bio-polymer material and a method for manufacturing the same are disclosed. The electronic device of the present invention comprises: a substrate; a first electrode disposed on the substrate; a bio-polymer layer disposed on the first electrode, wherein the bio-polymeric material is selected from a group consisting of wool keratin, collagen hydrolysate, gelatin, whey protein and hydroxypropyl methylcellulose; and a second electrode disposed on the biopolymer material layer. The present invention is suitable for various electronic devices such as an organic thin film transistor, an organic floating gate memory, or a metal-insulator-metal capacitor.

Abstract: A circuit board and a method for manufacturing the same are disclosed. The circuit board of the present invention comprises: a carrier board, wherein a first circuit layer is disposed on at least one surface of the carrier board, and the first circuit layer comprises plural conductive pads; a protein dielectric layer disposed on the surface of the carrier board and the first circuit layer, wherein the protein dielectric layer has plural openings to expose the conductive pads; and a second circuit layer disposed on a surface of the protein dielectric layer, wherein the second circuit layer comprises plural first conductive vias, and each first conductive via is correspondingly formed in the opening and electrically connects to the conductive pad.

Abstract: An N-type organic thin film transistor, an ambipolar field-effect transistor, and methods of fabricating the same are disclosed. The N-type organic thin film transistor of the present invention comprises: a substrate; a gate electrode locating on the substrate; a gate-insulating layer covering the gate electrode, and the gate-insulating layer is made of silk protein; a buffering layer locating on the gate-insulating layer, and the buffering layer is made of pentacene; an N-type organic semiconductor layer locating on the buffering layer; and a source and a drain electrode, wherein the N-type organic semiconductor layer, the buffering layer, the source and the drain electrode are disposed over the gate dielectric layer.

Abstract: A method of fabricating an organic thin film transistor is disclosed, which comprises steps of (S1) forming a gate electrode on a substrate; (S2) forming a gate insulating layer on the gate electrode; (S3) providing a gas on the surface of the gate insulating layer to form hydrophobic molecules on the surface of the gate insulating layer; (S4) forming an organic semiconductor layer, a source electrode, and a drain electrode over the gate insulating layer having hydrophobic molecules thereon, wherein the gas of step (S3) is at least one selected from the group consisting of halogen-substituted hydrocarbon, un-substituted hydrocarbon, and the mixtures thereof. The method of the present invention utilizes gases comprising carbon or fluorine atom to perform surface treatment on the surface of the gate insulating layer, therefore the hydrophobic character of the surface of the gate insulating layer can be enhanced and the electrical properties of the OTFT can be improved.

Abstract: A method of fabricating an organic thin film transistor is disclosed, which comprises steps of (S1) forming a gate electrode on a substrate; (S2) forming a gate insulating layer on the gate electrode; (S3) providing a gas on the surface of the gate insulating layer to form hydrophobic molecules on the surface of the gate insulating layer; (S4) forming an organic semiconductor layer, a source electrode, and a drain electrode over the gate insulating layer having hydrophobic molecules thereon, wherein the gas of step (S3) is at least one selected from the group consisting of halogen-substituted hydrocarbon, un-substituted hydrocarbon, and the mixtures thereof. The method of the present invention utilizes gases comprising carbon or fluorine atom to perform surface treatment on the surface of the gate insulating layer, therefore the hydrophobic character of the surface of the gate insulating layer can be enhanced and the electrical properties of the OTFT can be improved.