Abstract: A semiconductor package includes a substrate having a top surface and a bottom surface. A semiconductor device is mounted on the top surface of the substrate. The semiconductor device has an active front surface directly facing the substrate, and an opposite rear surface. A vapor chamber lid is in thermal contact with the rear surface of the semiconductor device. The vapor chamber lid includes an internal vacuum-sealed cavity that stores a working fluid, and wick structures for recirculating the working fluid within the internal vacuum-sealed cavity.

Abstract: A high power module is provided, which includes a substrate, plural first power chips, plural second power chips, a positive electrode plate and a negative electrode plat. The substrate includes a first metal area, a second metal area, a third metal area disposed between the first metal area and the second metal area. The first power chips are disposed on the third metal area and connected to the first metal area via plural first connection elements. The second power chips are disposed on the second metal area and connected to the third metal area via plural second connection elements. The positive electrode plate is C-shaped and connected to the first metal area. The negative electrode plate is C-shaped and connected to the second metal area; the direction of the opening of the negative electrode plate is contrary to that of the opening of the positive electrode plate.

Abstract: A semiconductor device includes an insulating thermal substrate, a metal wiring layer and a heat-dissipation component. The metal wiring layer includes a plurality of engaging structures. The plurality of engaging structures is disposed between the insulating thermal substrate and the heat-dissipation component, and the heat-dissipation component applies solder structures to connect the metal wiring layer by having the solder structures to wrap partly the plurality of engaging structures. In addition, a method for fabricating the same semiconductor device is also provided.

Abstract: A power heat dissipation device includes a heat-conducting layer, a heat sink and at least one cooling chip. The heat-conducting layer has a heat-absorbing surface and a heat-dissipating surface. The heat sink is in thermal contact with the heat-dissipating surface, and a heat-conducting section is formed in the heat sink. The cooling chip is embedded in the heat sink and disposed adjacent to the heat transferring channel. The cooling chip has a cooling surface which is perpendicular to the heat-absorbing surface. The cooling surface faces the heat transferring channel. The cooling chip removes heat from the heat-conducting section in the heat sink.

Abstract: A motor shaft system with a cooling function is provided, the motor shaft system has: a motor housing; a stator located on an inner wall of the motor housing; a shaft located in the motor housing, wherein the shaft comprises a plurality of through holes, one of the plurality of through holes penetrates from a first end of the shaft to a second end of the shaft along an axial direction of the shaft; a bearing located on the motor housing, wherein the bearing is configured to support the shaft; and a rotor located on the shaft, wherein there is a gap between the rotor and the stator.

Abstract: A power heat dissipation device includes a heat-conducting layer, a heat sink and at least one cooling chip. The heat-conducting layer has a heat-absorbing surface and a heat-dissipating surface. The heat sink is in thermal contact with the heat-dissipating surface, and a heat-conducting section is formed in the heat sink. The cooling chip is embedded in the heat sink and disposed adjacent to the heat transferring channel. The cooling chip has a cooling surface which is perpendicular to the heat-absorbing surface. The cooling surface faces the heat transferring channel. The cooling chip removes heat from the heat-conducting section in the heat sink.