Abstract: A backside-illuminated photosensor array IC is formed in a thinned circuit wafer. Silicon is removed in at least one substrate-stripped zone where a doped edge-contact ring surrounds the substrate-stripped zone, the edge-contact ring formed in a same first side of the wafer as a plurality of transistors, and opposite to a backside of the wafer. Backside metal is disposed on the backside of the wafer, the backside metal having window openings over the photosensors, and having sidewalls contacting the edge-contact ring around the substrate-stripped zone. The edge contact region is formed in the first side of the device wafer before providing structural support and thinning the device wafer. Substrate-stripped zones, such as bondpad openings and guardring openings, are formed by removing silicon to expose the edge-contact region, and backside metal is deposited with sidewall metal at edges of the substrate-stripped zones and thereby contacting the edge-contact region.

Abstract: A backside-illuminated photosensor array IC is formed in a thinned circuit wafer. Silicon is removed in at least one substrate-stripped zone where a doped edge-contact ring surrounds the substrate-stripped zone, the edge-contact ring formed in a same first side of the wafer as a plurality of transistors, and opposite to a backside of the wafer. Backside metal is disposed on the backside of the wafer, the backside metal having window openings over the photosensors, and having sidewalls contacting the edge-contact ring around the substrate-stripped zone. The edge contact region is formed in the first side of the device wafer before providing structural support and thinning the device wafer. Substrate-stripped zones, such as bondpad openings and guardring openings, are formed by removing silicon to expose the edge-contact region, and backside metal is deposited with sidewall metal at edges of the substrate-stripped zones and thereby contacting the edge-contact region.