Abstract: An example method of performing memory access operations comprises: receiving a request to perform a memory access operation with respect to a set of memory cells connected to a wordline of a memory device; identifying a block family associated with the set of memory cells; determining, for each logical programming level of a plurality of logical programming levels, a corresponding default block family error avoidance (BFEA) threshold voltage offset value associated with the block family; determining a value of a data state metric associated with the set of memory cells; responsive to determining that the value of the data state metric satisfies a threshold criterion, determining, for each logical programming level of a plurality of logical programming levels, a corresponding sub-BFEA threshold voltage offset value; and performing the memory access operation by applying, for each logical programming level of the plurality of logical programming levels, a combination of the default BFEA threshold voltage value

Abstract: A processing device in a memory sub-system detects an occurrence of a data integrity check trigger event in the memory sub-system, and in response, identifies a memory die of a plurality of memory dies in the memory sub-system. The processing device further determines a read margin associated with a first distribution of memory cells of the identified memory die, and determines an adaptive scan frequency for the identified memory die based on the read margin associated with the first distribution of memory cells.

Abstract: A processing device in a memory sub-system determines whether a media endurance metric associated with a memory block of a memory device satisfies one or more conditions. In response to the one or more conditions being satisfied, one or more read margin levels corresponding to a page type associated with the memory device are determined. A machine learning model is applied to the one or more read margin levels to generate a margin prediction value based on the page type and a wordline group associated with the memory device. Based on the margin prediction value, the memory device is assigned to a selected bin of a set of bins. A media scan operation is executed on the memory device in accordance with a scan frequency associated with the selected bin.

Abstract: An example system can include a memory device and a processing device. The memory device can include a group of memory cells. The processing device can be coupled to the memory device. The processing device can be configured to determine a distance of a memory die from a center of a memory component. The processing device can be configured to perform a read disturb operation on the memory die based on the determined distance use a first voltage window for a set of memory cells of the group of memory cells during a first time period.

Abstract: Methods, systems, and devices for read window management in a memory system are described. A memory system may determine, for a set of memory cells, a first value for a read window that is associated with a set of one or more threshold voltages each representing a different multi-bit value. The memory system may then use the first value for the read window to predict a second value for the read window. Based on the second value for the read window, the memory system may predict an error rate for the set of memory cells. The memory system may then set a value for an offset for a threshold voltage of the set of one or more threshold voltages based on the error rate.

Abstract: An optical keyswitch includes a keycap, a support mechanism, and a switch module. The support mechanism is disposed below the keycap and configured to support the keycap moving upward and downward, the support mechanism comprising a first frame and a second frame, the first frame having a sliding end. The switch module includes a circuit board, an emitter, and a receiver, the emitter and the receiver are electrically connected to the circuit board, and the emitter emitting an optical signal to the receiver. When the keycap is pressed, the first frame is driven by the keycap to slide substantially parallel to the circuit board and block the optical signal with the sliding end, so the switch module is triggered to generate a triggering signal.

Abstract: A first page read on the first memory page utilizing a first trim value is performed responsive to initiating a memory page scan on a first memory page of a plurality of memory pages. Whether a first data state metric associated with the first page read satisfies a first threshold criterion is determined. A second page read on the first memory page utilizing a second trim value is performed responsive to determining that the first data state metric satisfies the first threshold criterion. Whether a second data state metric associated with the second page read satisfies a second threshold criterion is determined. The second trim value to perform subsequent page reads during memory page scans is selected responsive to determining that the second data state metric does not satisfy the first threshold criterion.

Abstract: A read command is received by a processing device coupled to a memory device. The read command specified a logical address. The processing device translates the logical address into a physical address of a physical block of the memory device, wherein the physical address specifies a wordline and a memory device die. Responsive to determining that the physical block is partially programmed, the processing device identifies a threshold voltage offset associated with the wordline. The processing device computes a modified threshold voltage by applying the threshold voltage offset to a read level associated with the memory device die. The processing device reads the data from the physical block using the modified threshold voltage.

Abstract: An optical keyswitch includes a keycap, a support mechanism, and a switch module. The support mechanism is disposed below the keycap and configured to support the keycap moving upward and downward, the support mechanism comprising a first frame and a second frame, the first frame having a sliding end. The switch module includes a circuit board, an emitter, and a receiver, the emitter and the receiver are electrically connected to the circuit board, and the emitter emitting an optical signal to the receiver. When the keycap is pressed, the first frame is driven by the keycap to slide substantially parallel to the circuit board and block the optical signal with the sliding end, so the switch module is triggered to generate a triggering signal.

Abstract: An optical keyswitch includes a keycap, a support mechanism, and a switch module. The support mechanism is disposed below the keycap and configured to support the keycap moving upward and downward, the support mechanism comprising a first frame and a second frame, the first frame having a sliding end. The switch module includes a circuit board, an emitter, and a receiver, the emitter and the receiver are electrically connected to the circuit board, and the emitter emitting an optical signal to the receiver. When the keycap is pressed, the first frame is driven by the keycap to slide substantially parallel to the circuit board and block the optical signal with the sliding end, so the switch module is triggered to generate a triggering signal.

Abstract: A keyswitch assembly includes a switch module, a support mechanism, a blocking mechanism, an enhancing light source, and a backlight source. The switch module includes a substrate, a signal generator, and a signal sensor. The signal generator generates a sensing signal. The signal sensor receives the sensing signal to obtain a sensing strength. The support mechanism is disposed on the substrate. The blocking mechanism is disposed on the substrate and has a light-permeable portion. A portion of the blocking mechanism inserts into or escapes from a gap between the signal generator and the signal sensor. The backlight source is disposed on the substrate and located outside the vertical projection of the blocking mechanism on the substrate. The enhancing light source is disposed on the substrate and located within the vertical projection of the blocking mechanism on the substrate and corresponds to the light-permeable portion.

Abstract: A processing device of a memory sub-system is configured to determine a current refresh frequency associated with the memory device, the current refresh frequency specifying a rate of performing refresh operations on data stored at the memory device; compute an updated refresh frequency by updating the current refresh frequency based on a criterion reflecting a result of comparing one or more operating parameters of the memory device to their respective threshold values; and perform a refresh operation on data stored at the memory device according to the updated refresh frequency.

Abstract: A keyswitch assembly includes a switch module, a support mechanism, and a blocking mechanism. The switch module includes a substrate, a signal generator, and a signal sensor. The signal generator provides a sensing signal. The signal sensor receives the sensing signal to obtain a sensing intensity. The support mechanism is disposed on the substrate. A top portion of the support mechanism moves in response to a pressing force. The blocking mechanism includes a pivoting portion rotatably disposed on the substrate, a connecting piece extending from the pivoting portion and movably connected to the support mechanism to be driven by the top portion to swivel relative to the substrate, and a blocking piece extending from the pivoting portion and driven by the connecting piece to be inserted into or escape from the gap between the signal generator and the signal sensor to change the magnitude of the sensing intensity.

Abstract: Systems, methods, and apparatus related to memory devices. In one approach, a cross-point memory array includes memory cells. A media controller reads one or more first memory cells and determines a read status. The read status indicates an error when reading the first memory cells. In response to this error, the controller refreshes the first memory cells. The controller uses the read status to determine zeroto-one failures associated with the first memory cells. If a number of these failures exceeds a threshold, then a refresh is applied to neighboring memory cells of the first memory cells. The physical addresses for the neighboring memory cells are determined by the controller from the physical addresses for the first memory cells.

Abstract: A method for removing etchant byproduct from an etch reactor and discharging a substrate from an electrostatic chuck of the etch reactor is provided. One or more layers on a substrate electrostatically secured to an electrostatic chuck within a chamber of the etch reactor is etched using a first plasma, causing an etchant byproduct to be generated. A portion of the one or more layers are covered by a photoresist. After the etching is complete, a second plasma is provided into the chamber for a time period sufficient to trim the photoresist and remove a portion of the etchant byproduct. A second time period sufficient to electrostatically discharge the substrate using the second plasma is determined. Responsive to deactivating one or more chucking electrodes of the electrostatic chuck, the second plasma is provided into the chamber for the second time period and the substrate is removed from the chamber.

Abstract: A processing device of a memory sub-system is configured to determine a current refresh frequency associated with the memory device, the current refresh frequency specifying a rate of performing refresh operations on data stored at the memory device; compute an updated refresh frequency by updating the current refresh frequency based on a criterion reflecting a result of comparing one or more operating parameters of the memory device to their respective threshold values; and perform a refresh operation on data stored at the memory device according to the updated refresh frequency.

Abstract: A method for removing etchant byproduct from an etch reactor and discharging a substrate from an electrostatic chuck of the etch reactor is provided. A substrate may be electrostatically secured to an electrostatic chuck within a chamber of an etch reactor. A first plasma may be provided into the chamber to etch the substrate, causing an etchant byproduct to be generated. After the etching is complete, a second plasma may be provided into the chamber, wherein the second plasma is an oxygen containing plasma. The etchant byproduct may be removed and the first substrate may be discharged using the second plasma. The first substrate may be removed from the chamber and a second substrate may be inserted into the chamber without first performing an in-situ cleaning between the removal of the first substrate and the insertion of the second substrate.

Abstract: An optical keyswitch includes a keycap, a support mechanism, and a switch module. The support mechanism is disposed below the keycap and configured to support the keycap moving upward and downward, the support mechanism comprising a first frame and a second frame, the first frame having a sliding end. The switch module includes a circuit board, an emitter, and a receiver, the emitter and the receiver are electrically connected to the circuit board, and the emitter emitting an optical signal to the receiver. When the keycap is pressed, the first frame is driven by the keycap to slide substantially parallel to the circuit board and block the optical signal with the sliding end, so the switch module is triggered to generate a triggering signal.

Abstract: A keyswitch assembly includes a switch module, a support mechanism, a blocking mechanism, an enhancing light source, and a backlight source. The switch module includes a substrate, a signal generator, and a signal sensor. The signal generator generates a sensing signal. The signal sensor receives the sensing signal to obtain a sensing strength. The support mechanism is disposed on the substrate. The blocking mechanism is disposed on the substrate and has a light-permeable portion. A portion of the blocking mechanism inserts into or escapes from a gap between the signal generator and the signal sensor. The backlight source is disposed on the substrate and located outside the vertical projection of the blocking mechanism on the substrate. The enhancing light source is disposed on the substrate and located within the vertical projection of the blocking mechanism on the substrate and corresponds to the light-permeable portion.

Abstract: A keyswitch assembly includes a switch module, a support mechanism, and a blocking mechanism. The switch module includes a substrate, a signal generator, and a signal sensor. The signal generator provides a sensing signal. The signal sensor receives the sensing signal to obtain a sensing intensity. The support mechanism is disposed on the substrate. A top portion of the support mechanism moves in response to a pressing force. The blocking mechanism includes a pivoting portion rotatably disposed on the substrate, a connecting piece extending from the pivoting portion and movably connected to the support mechanism to be driven by the top portion to swivel relative to the substrate, and a blocking piece extending from the pivoting portion and driven by the connecting piece to be inserted into or escape from the gap between the signal generator and the signal sensor to change the magnitude of the sensing intensity.