Abstract: Low-density hot dip galvanized steel, comprising a steel substrate (1) located at a core portion and a coating layer (3) located on the surface. An interface layer is disposed between the steel substrate (1) and the coating layer (3), the interface layer comprises an iron particle layer (4), iron particles dispersed on the steel substrate (1) and covering the steel substrate (1) are disposed in the iron particle layer (4), and the iron particles are covered by a first inhibition layer (5). The low-density hot dip galvanized steel contains element Al in a mass percentage of 3.0% to 7.0%. Correspondingly, the present invention also comprises a manufacturing method for the low-density hot dip galvanized steel. The low-density hot dip galvanized steel has a low density, a high strength and high galvanizability and coating layer adhesion.

Abstract: A semiconductor device includes a buried dielectric layer, a first gate structure, a second gate structure, a first source/drain region, a second source/drain region, a first contact structure and a second contact structure. The first gate structure and the second gate structure disposed respectively in the front-side and backside of the dielectric layer, the first source/drain region and the second source/drain region are disposed between the first gate structure and the second gate structure, the first contact structure is disposed in the front-side of the dielectric layer and electrically coupled to the first source/drain region, the second contact structure is disposed in the backside of the dielectric layer and electrically coupled to the second source/drain region.

Abstract: In accordance with one or more embodiments, the present invention provides a compound of formulas I, II, and III, for use in methods of inhibition of PBX1-DNA interaction in a mammalian cell or population of cells, and for use in the treatment of medical conditions including but not limited to cancers, developmental disorders, inflammatory disorders, autoimmune diseases, or neuro-degenerative disorders.

Abstract: A VCSEL array includes a plurality of VCSEL elements arranged in a programmed pattern defining a center portion and a peripheral edge portion. The interval distances between the VCSEL elements in the vicinity of the center portion and/or at the center portion are greater than the interval distances between the VCSEL elements close to the peripheral edge portion, such that the VCSEL array has a uniform power output.

Abstract: An array substrate, including: a base substrate including a display area and a non-display area; a first transistor in the display area; a second transistor in the non-display area; and a substrate electrode, the substrate electrode including: a first substrate electrode between the first transistor and the base substrate; and a second substrate electrode between the second transistor and the base substrate, wherein the first substrate electrode and the second substrate electrode are configured to adjust threshold voltages of the first transistor and the second transistor, respectively, there is an open circuit between the first substrate electrode and the second substrate electrode, the first substrate electrode is supplied with a first adjustment voltage, the second substrate electrode is supplied with a second adjustment voltage, and an absolute value of the first adjustment voltage is different from an absolute value of the second adjustment voltage.

Abstract: The present invention provides a compound represented by formula (I), or a pharmaceutically acceptable salt, a solvate, an ester, an acid, a metabolite or a prodrug thereof. The compound itself in the present invention or in combination with at least one therapeutic agent can be used for preventing or treating diseases, disorders or symptoms caused by the adjustment of the activity of tyrosine kinase C-KIT, or affected by the activity of the tyrosine kinase C-KIT or involving in the activity of the tyrosine kinase C-KIT, especially cancers or other cell proliferation diseases.

Abstract: Methods for forming semiconductor structures are provided. The method includes forming a gate structure over a substrate and forming a source/drain structure adjacent to the gate structure. The method further includes forming a mask structure over the gate structure and forming a contact over the source/drain structure. The method further includes selectively forming a metal-containing layer over a top surface of the contact and forming a dielectric layer over the substrate and covering the gate structure and the contact. The method further includes forming a trench through the dielectric layer and the metal-containing layer to expose the top surface of the contact and forming a conductive structure in the trench.

Abstract: This invention provides methods and compositions for preventing, treating or ameliorating one or more symptoms of a malignant tumor associated with KRAS mutation in a mammal in need thereof, by identifying a tumor cell in the mammal, the tumor cell comprising at least one of: (i) a mutation of the KRAS gene, and (ii) an aberrant expression level of KRAS protein; and administering to the mammal a therapeutically effective amount of a composition comprising one or more RNAi molecules that are active in reducing expression of GST-?.

Abstract: A pacemaker fixation system, a leadless pacemaker system and a method of use thereof are disclosed. The leadless pacemaker system includes: a pacemaker fixation system including a leadless pacemaker and an elastic unfoldable element attached thereto, wherein in an unfolded configuration of the elastic unfoldable element, it fixes the leadless pacemaker at a target location in a blood vessel in communication with the heart; a delivery system for delivering the pacemaker fixation system to the target location; and a guide for guiding the delivery system into the blood vessel. According to the present invention, atrial pacing can be achieved by the leadless pacemaker through fixing the leadless pacemaker in the blood vessel in communication with the heart with the elastic unfoldable element.

Abstract: Disclosed are a power battery pack safety prevention and control system for an electric vehicle and a control method. The power battery pack safety prevention and control system includes a signal collection device, a master controller, and a stepwise prevention and control actuator. The master controller includes a fault diagnosis device, a cell thermal runway determination device, and a battery pack thermal runway spread determination device which are respectively electrically connected to the stepwise prevention and control actuator and send different control instructions to the stepwise prevention and control actuator. The stepwise prevention and control actuator can perform different levels of prevention and control actions according to different control instructions sent by the fault diagnosis device, the cell thermal runway determination device, and the battery pack thermal runway spread determination device.

Abstract: The present disclosure discloses a method, device and system for transmitting a participating service provider identity. The method includes: parsing a previously received broadcast that is transmitted by a Neutral Host (NH) network access device to determine whether a first short PSP identity corresponding to a long PSP identity to be accessed exists in a first short PSP identity list in the broadcast; transmitting a first communication protocol message to the NH network access device when it is determined that the first short PSP identity exists in the first short PSP identity list; and acquiring a second communication protocol message transmitted by the NH network access device, the second communication protocol message indicating whether an NH network supports the long PSP identity.

Abstract: The present application provides a compound of Formula (I) as an inhibitor against wild-type EGFR and/or mutant EGFR, which may be used for treating human non-small cell lung cancer individually or in combination with other therapeutic agent(s). The compound of Formula (I) of the present application may be used for treating patients of drug-resistant human non-small cell lung cancer harboring wild-type EGFR and/or EGFR T790M mutation and/or EGFR L858R mutation and/or EGFR delE746_A750 mutation.

Abstract: A sensing apparatus, a piercing terminal, a stamping strip and a corresponding method are provided. Flat copper wires at tail ends of parallel wires of a FPC film are pierced, pressed tightly and fixed by first to fourth spikes on a metal strip. The first to fourth spikes are electrically connected to the flat copper wires at positions where the flat copper wires are pierced respectively, achieving an electrical connection between two piercing terminals and the two flat copper wires at the tail ends of the parallel wires of the FPC film, helping ensure the reliability of the electrical connection. Further, the piercing terminals are suitable for parallel wires of FPC films with different specifications.

Abstract: A method of replacing an original server 202 in a network by a new server 204, each of the original server and the new server including at least a baseboard management controller (BMC) 206, 218, is disclosed as including generating a set of data including at least one configuration data relating to a hardware of the original server, the BMC of the original server configuring at least one hardware of the original server according to the set of data, and booting the new server and configuring at least one hardware of the new server according to the set of data.

Abstract: A semiconductor device and a method of making the same are provided. A method according to the present disclosure includes forming a first type epitaxial layer over a second type source/drain feature of a second type transistor, forming a second type epitaxial layer over a first type source/drain feature of a first type transistor, selectively depositing a first metal over the first type epitaxial layer to form a first metal layer while the first metal is substantially not deposited over the second type epitaxial layer over the first type source/drain feature, and depositing a second metal over the first metal layer and the second type epitaxial layer to form a second metal layer.

Abstract: A display panel and a driving method thereof, a display device. The display panel includes a common cathode, a first power terminal, a first wire and a first switch. The driving method includes: obtaining a total image current of a display image; and determining whether the total image current is greater than a first threshold current, if the total image current is greater than the first threshold current, controlling the first switch to disconnect the first wire, if the total image current is not greater than the first threshold current, controlling the first switch to connect the first wire, so that the second side of the common cathode is connected to the first power terminal through the first wire.

Abstract: Provided are a resource scheduling method, a resource determining method, an eNB, and a user equipment. The resource scheduling method for wireless communication is performed by the eNB. The wireless communication involves at least a first carrier and a second carrier. The resource scheduling method includes: transmitting a DCI in the first carrier to a UE to schedule downlink resources for a PDSCH of the second carrier, wherein the eNB is able to start transmitting a burst in the second carrier at a flexible time independent of the subframe boundaries of the second carrier after the second carrier is occupied by the eNB, and the DCI for a flexible PDSCH of the burst different from the normal PDSCH of the second carrier contains information on the time period scheduled for the flexible PDSCH. The flexible PDSCH and its corresponding RS can reuse the DwPTS subframe structure for minimal specification impact.

Abstract: The present invention discloses a circuit substrate, including a first signal end, a second signal end, a first circular capacitor structure, and a second circular capacitor structure. The first circular capacitor structure is electrically connected to the first signal end. The second circular capacitor structure is electrically connected to the second signal end. The first circular capacitor structure and the second circular capacitor structure are located in different planes of the circuit substrate.

Abstract: A wireless charging system (transmitter) has multiple transmit coils that allows for multiple receiver devices (receivers), such as cell phones, to be charged simultaneously. The receivers send data packets that include a receiver ID to the transmitter so that one of the transmitter coils can be paired with a respective one of the receivers. The transmitter can then distinguish between the communications with the receivers using the IDs such that communications with receivers connected with adjacent ones of the transmitter coils do not interfere with each other.

Abstract: An example semiconductor wafer includes a semiconductor layer, a dielectric layer disposed on the semiconductor layer, and a layer of the metal disposed on the dielectric layer. An example method of determining an effective work function of a metal on the semiconductor wafer includes determining a surface barrier voltage of the semiconductor wafer, and determining a metal effective work function of the semiconductor wafer based, at least in part, on the surface barrier voltage.