Abstract: A memory device includes a first alternating stack including first insulating layers and first electrically conductive layers that are interlaced along a vertical direction, where a first stepped cavity located inside the first alternating stack includes a first stepped bottom surface containing horizontally-extending surface segments of the first electrically conductive layers, a memory opening vertically extending through each layer within the first alternating stack, a memory opening fill structure located in the memory opening and including a vertical stack of memory elements, a first insulating spacer contacting sidewalls of the first stepped cavity, and a first electrically conductive strip including a first horizontally-extending bottom strip segment contacting one of the first electrically conductive layers, a first horizontally-extending top strip segment that overlies a topmost layer within the first alternating stack, and a first vertically-extending strip segment connecting the first horizontally-