Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-oxygen-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency less than 15 MHz (e.g., 13.56 MHz). The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.5 and a hardness greater than about 3 Gpa.

Abstract: A method for determining a consistency coefficient of a power-law cement grout includes: determining a water-cement ratio of the power-law cement grout; according to engineering practice requirements, determining a time required to determine the consistency coefficient of the power-law cement grout; and obtaining the consistency coefficient of the power-law cement grout. The method is accurate and reliable, requires less calculation, etc.; and has very high practical value and popularization value in environmental protection and ecological restoration.

Abstract: The disclosure provides an optical imaging lens assembly and a fingerprint identification device with the optical imaging lens assembly. The optical imaging lens assembly sequentially comprises, from an object side to an image side along an optical axis: a first lens with a negative refractive power, an object-side surface thereof being a concave surface; a second lens with a positive refractive power, an object-side surface thereof being a convex surface; and a third lens with a positive refractive power, an object-side surface thereof being a convex surface while an image-side surface being a convex surface. EPD is an entrance pupil diameter of the optical imaging lens assembly, and a total effective focal length f of the optical imaging lens assembly and EPD meet f/EPD<1.65. FOV is a maximum field of view of the optical imaging lens assembly, and FOV meets 125°<FOV<140°.

Abstract: The present disclosure provides a direct current (DC) transformer error detection apparatus for a pulsating harmonic signal, including a DC and pulsating harmonic current output module and an external detected input module, where the DC and pulsating harmonic current output module outputs a DC and a DC superimposed pulsating harmonic current to an internal sampling circuit and a self-calibrated standard resistor array; and the internal sampling circuit converts the input DC and the input DC superimposed pulsating harmonic current into a voltage signal, and sends the voltage signal to an analog-to-digital (AD) sampling and measurement component through a front-end conditioning circuit and a detected input channel. The DC transformer error detection apparatus can complete self-calibration for measurement of the DC and the pulsating harmonic signal on a test site.

Abstract: The present disclosure describes methods, system, and devices for configuring a user equipment (UE) with priority information for measurement task. One method includes sending, by the RAN node, a configuration message to the UE, the configuration message comprising the priority information, so that the UE performs a measurement task and reports at least one measurement result according to the priority information; and receiving, by the RAN node, the at least one measurement result from the UE. Another method includes receiving, by the UE, a configuration message from a radio access network (RAN) node, the configuration message comprising the priority information; and performing, by the UE, a measurement task and reporting at least one measurement result according to the priority information.

Abstract: Provided are a water-soluble Pd(II) complex, a synthesis method thereof and use thereof as a catalytic precursor. The complex has a chemical name, ammonium dinitrooxalato palladium (II), and a molecular formula of (NH4)2[Pd(NO2)2(C2O4)]·nH2O (n is the number of crystal water). The Pd(II) complex is synthesized by using PdCl2 or [Pd(NH3)2Cl2] as a starting material which is firstly converted into [Pd(NH3)4]Cl2 in ammonium hydroxide, followed by a chemical reaction between [Pd(NH3)4]Cl2 and excessive NaNO2 to produce trans-[Pd(NH3)2(NO2)2] via ligand substitution mechanism, and finally dissolving trans-[Pd(NH3)2(NO2)2] in an aqueous solution of oxalic acid leads to the formation of the target product (NH4)2[Pd(NO2)2(C2O4)]·2H2O. The complex does not contain chlorine and other elements that are harmful to a catalyst, is readily soluble in water and has a low thermal decomposition temperature.

Abstract: Embodiments include semiconductor processing methods to form low-? films on semiconductor substrates are described. The processing methods may include flowing one or more deposition precursors to a semiconductor processing system. The one or more deposition precursors may include a silicon-containing precursor that may be a cyclic compound. The methods may include generating a deposition plasma from the one or more deposition precursors. The methods may include depositing a silicon-and-carbon-containing material on the substrate from plasma effluents of the deposition plasma. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant less than or about 3.0.

Abstract: A semiconductor structure includes a semiconductor on insulator (SOI) substrate, a first electrically conductive structure, and a second electrically conductive structure. The SOI substrate includes a base substrate, a buried insulation layer disposed on the base substrate, a semiconductor layer disposed on the buried insulation layer, and a trap rich layer disposed between the buried insulation layer and the base substrate. At least a part of the first electrically conductive structure and at least a part of the second electrically conductive structure are disposed in the trap rich layer. A part of the trap rich layer is disposed between the first electrically conductive structure and the second electrically conductive structure. The first electrically conductive structure, the second electrically conductive structure, and the trap rich layer disposed between the first electrically conductive structure and the second electrically conductive structure are at least a portion of an anti-fuse structure.

Abstract: A high-throughput microstructure characterization and reconstruction method of heterogeneous materials is provided. By extracting the features such as content, size and morphology of each constituent phase in the microscopic image of heterogeneous materials, and combining the principles of physical descriptor and texture synthesis method, the constituent phase with 10 microns scale, regular geometrical morphology and low content is characterized and reconstructed based on the physical descriptor, and the constituent phase with 100 microns scale, complex geometrical morphology and high content is characterized and reconstructed based on texture synthesis, and then the composition is adjusted to compensate for the overlapping pixels of each constituent phase to obtain batch reconstructed images.

Abstract: The method for full-chip quick simulation of negative tone development photolithography process, analyze the elastic deformation of the photoresist based on elastic mechanics, sets one of the stress and strain variables as an equivalent of a deformation of the photoresist, to obtain an equivalent equation, performs an approximate calculation of the equivalent equation using a Taylor expansion formula to obtain an approximate value of stress or strain, and adjusts the light field distribution according to the approximate value to obtain an appropriate acid concentration distribution, which can make the exposed image closest to a target image. It can effectively analyze the deformation of the photoresist during the thermal shrinkage effect process and improve the accuracy of the lithography calculation process. At the same time, the Taylor expansion is used to fit the thermal shrinkage effect, which can improve the calculation speed.

Abstract: Systems and methods for predicting a risk of cardiovascular disease (CVD) from one or more fundus images are disclosed. Fundus images associated with an individual are processed to determine whether fundus images are of sufficient quality. The fundus images of sufficient quality are processed to identify fundus images belonging to a single eye. A plurality of risk contributing factor sets of CNNs (RCF CNN) are configured to output an indicator of probability of the presence of a different risk contributing factor in each of the one or more fundus images. At least one of the RCF CNNs is configured in a jury system model having a plurality of jury member CNNs, each being configured to output a probability of a different feature in the one or more fundus images. The outputs of the jury member CNNs are processed to determine the indicator of probability of the presence of the risk contributing factor output by the RCF CNN.

Abstract: The method for simulation of negative tone development photolithography process, includes following steps: S1, divide a selected photoresist region into finite elements to obtain a plurality of lattice units based on a finite element analysis method; S2, set deformation of photoresist as elastic deformation, equivalent an irradiation effect of a light field on the lattice units to a force, perform stress analysis on a lattice unit based on elastic mechanics, generate a unit stiffness matrix of each lattice unit based on a relationship between stress and strain, and form an overall stiffness matrix of the photoresist region based on generated unit stiffness matrix of each lattice unit; S3, define the stresses on nodes of each lattice unit as node forces, obtain equivalent node forces of each lattice unit, and obtain overall node forces matrix of the photoresist region based on obtained equivalent node forces; S4, solve the overall stiffness matrix and the overall node force matrix, and calculate an overall dis

Abstract: A method and a system for dispatching an independent energy storage power station is provided.

Abstract: A glue rewarming device includes a glue pipe, a main body, a plurality of temperature sensors, a timer, and a control terminal. Each glue pipe is configured to receive glue. The main body defines the grooves spaced apart from each other. Each groove is configured to receive one glue pipe. Each temperature sensor is in one groove and on an inner wall of the one groove. The temperature sensor is configured to sense a temperature of the glue in the glue pipe inserted into the corresponding groove. The timer is configured to record a time point when the glue pipe is placed in one groove and a time length from the time point when the glue pipe is placed in one groove to the time when the glue in the glue pipe reaches a target temperature. The control terminal is electrically connected to the timer and the temperature sensors.

Abstract: The disclosure provides an optical imaging lens assembly and a fingerprint identification device with the optical imaging lens assembly. The optical imaging lens assembly sequentially comprises, from an object side to an image side along an optical axis: a first lens with a negative refractive power, an object-side surface thereof being a concave surface; a second lens with a positive refractive power, an object-side surface thereof being a convex surface; and a third lens with a positive refractive power, an object-side surface thereof being a convex surface while an image-side surface being a convex surface. EPD is an entrance pupil diameter of the optical imaging lens assembly, and a total effective focal length f of the optical imaging lens assembly and EPD meet f/EPD<1.65. FOV is a maximum field of view of the optical imaging lens assembly, and FOV meets 125°<FOV<140°.

Abstract: The disclosure provides an optical imaging lens assembly, which sequentially includes from an object side to an image side along an optical axis: a first lens with a positive refractive power; a second lens with a refractive power; a third lens with a refractive power; a fourth lens with a refractive power; a fifth lens with a refractive power, an object-side surface thereof is a convex surface, and an image-side surface thereof is a concave surface; a sixth lens with a positive refractive power, an object-side surface thereof is a convex surface, and an image-side surface thereof is a concave surface; a seventh lens with a negative refractive power; wherein an on-axis distance TTL from an object-side surface of the first lens to an imaging surface and a half of a diagonal length ImgH of an effective pixel region on the imaging surface satisfy: TTL/ImgH<1.25.

Abstract: The present invention pertains to a composition comprising at least one biocompatible and biodegradable polymer, the polymer further comprising nanocarriers wherein the nanocarriers comprise a drug. Moreover, also encompassed by the invention is the use of the composition in the treatment of a disease and a method for manufacturing the composition.

Abstract: A method for preparing a GaN substrate material includes: performing in-situ epitaxy on a Ga2O3 thin film and a GaN thin film in a multifunctional HVPE growth system. First, the Ga2O3 thin film is grown on a substrate such as sapphire by an HVPE-like method, and the Ga2O3 is nitrided in an ammonia gas atmosphere to form a GaN/Ga2O3 composite thin film. Then, a GaN thick film is grown on the GaN/Ga2O3 composite thin film by HVPE to obtain a high-quality GaN thick film material. The Ga2O3 layer is removed by chemical etching to obtain a self-supporting GaN substrate material. Or, the conventional laser lift-off method is used to separate the GaN thick film from the heterogeneous substrate such as the sapphire to obtain a GaN self-supporting substrate material.

Abstract: Disclosed are a human rare blood type detection method, a kit, a rapid screening method and applications thereof. By using multiple pairs of PCR specific primers directing to the SNP loci of multiple rare blood types, the SNP loci of multiple rare blood types are simultaneously detected in the same PCR reaction system; and the multiplex PCR detection method and a Pool detection method are combined to rapidly screen the human rare blood types.