Patents by Inventor Li Yan JIN

Li Yan JIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11715947
    Abstract: An electrostatic discharge (ESD) protection circuit includes an ESD detector connected between a pad and a first power source and configured to generate a detection signal when ESD is detected at the pad, a switch transistor including a gate controlled by the detection signal and a source and a drain connected between the pad and the memory, and a leakage current prevention circuit including a first transistor including a first gate connected to a second power source and a source and a drain connected between the pad and a first node, and a second transistor including a second gate connected to the pad and a source and a drain connected between the first node and the second power source. The first node is connected to or in electrical communication with a bulk node of the switch transistor.
    Type: Grant
    Filed: December 18, 2021
    Date of Patent: August 1, 2023
    Assignee: DB HiTek, Co., Ltd.
    Inventors: Sang Mok Lee, Joon Tae Jang, Won Suk Park, Li Yan Jin, Seung Hoo Kim
  • Publication number: 20220239095
    Abstract: An electrostatic discharge (ESD) protection circuit includes an ESD detector connected between a pad and a first power source and configured to generate a detection signal when ESD is detected at the pad, a switch transistor including a gate controlled by the detection signal and a source and a drain connected between the pad and the memory, and a leakage current prevention circuit including a first transistor including a first gate connected to a second power source and a source and a drain connected between the pad and a first node, and a second transistor including a second gate connected to the pad and a source and a drain connected between the first node and the second power source. The first node is connected to or in electrical communication with a bulk node of the switch transistor.
    Type: Application
    Filed: December 18, 2021
    Publication date: July 28, 2022
    Inventors: Sang Mok LEE, Joon Tae JANG, Won Suk PARK, Li Yan JIN, Seung Hoo KIM