Abstract: A semiconductor device includes a source/drain feature over a semiconductor substrate, channel layers over the semiconductor substrate and connected to the source/drain feature, a gate portion between vertically adjacent channel layers, and an inner spacer between the source/drain feature and the gate portion and between adjacent channel layers. The semiconductor device further includes an air gap between the inner spacer and the source/drain feature.

Abstract: A probe head includes a probe seat, and vertical probes each having a head portion including a head portion installation section with a first width, and a probe tip section including a probe tip contact part with a second width smaller than the first width and a probe tip gradually narrowing part which is located between the head portion installation section and the probe tip contact part, gradually narrows from the first width to the second width, and has a first length smaller than a second length of the probe tip contact part. The head portion installation section protrudes out of a lower surface of the probe seat for a length smaller than the sum of the first and second lengths. The vertical probe is great in current withstanding capability, structural strength and life time, and meets the requirement of probing tiny electrically conductive contacts.

Abstract: A semiconductor device includes a source/drain feature over a semiconductor substrate, channel layers over the semiconductor substrate and connected to the source/drain feature, a gate portion between vertically adjacent channel layers, and an inner spacer between the source/drain feature and the gate portion and between adjacent channel layers. The semiconductor device further includes an air gap between the inner spacer and the source/drain feature.

Abstract: A power device includes a power supply module, a first electrical isolation unit, a second electrical isolation unit, a feedback control unit, and a comparing unit. The power supply module includes a feedback compensating terminal and an output terminal, the feedback compensating terminal provides a related voltage of output power, and the output terminal provides an output voltage. When the related voltage of output power is smaller than the predetermined voltage, the comparing unit controls the first electrical isolation unit to change operation of the feedback control unit and the second electrical isolation unit, to allow the power supply module to adjust the output voltage.

Abstract: A power device includes a power supply module, a first electrical isolation unit, a second electrical isolation unit, a feedback control unit, and a comparing unit. The power supply module includes a feedback compensating terminal and an output terminal, the feedback compensating terminal provides a related voltage of output power, and the output terminal provides an output voltage. When the related voltage of output power is smaller than the predetermined voltage, the comparing unit controls the first electrical isolation unit to change operation of the feedback control unit and the second electrical isolation unit, to allow the power supply module to adjust the output voltage.