Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a bottom layer over a substrate and forming a middle layer over the bottom layer. The middle layer includes a carbon backbone and a first side chain bonded to the carbon backbone, and the first side chain has a hydrophilic group. The method includes forming a top layer over the middle layer and patterning the top layer to form a patterned top layer. The method includes patterning the middle layer by using the patterned top layer as a mask to form a patterned middle layer. The method includes patterning the bottom layer to form a patterned bottom layer. The method also includes removing the patterned middle layer by a base solution, and the middle layer is soluble in the base solution by the hydrophilic group.

Abstract: Formation methods of a semiconductor device structure are provided. The method includes forming an under layer over a substrate, forming a middle layer over the under layer, and forming a patterned upper layer over the middle layer. The patterned upper layer has a first opening exposing a portion of the middle layer. The method also includes etching the portion of the middle layer exposed by the first opening to form a second opening exposing a portion of the under layer, and etching the portion of the under layer exposed by the second opening of the middle layer. The method further includes forming pores in the middle layer before or during the etching of the portion of the under layer.

Abstract: Formation methods of a semiconductor device structure are provided. The method includes forming an under layer over a substrate, forming a middle layer over the under layer, and forming a patterned upper layer over the middle layer. The patterned upper layer has a first opening exposing a portion of the middle layer. The method also includes etching the portion of the middle layer exposed by the first opening to form a second opening exposing a portion of the under layer, and etching the portion of the under layer exposed by the second opening of the middle layer. The method further includes forming pores in the middle layer before or during the etching of the portion of the under layer.

Abstract: A photoresist includes a polymer backbone, an acid labile group (ALG) chemically bonded to the polymer backbone, a photo-acid generator (PAG), a solvent, and a silicon-containing unit that is chemically bonded to the ALG. A method of using the photoresist composition includes forming a layer of the photoresist over a substrate, performing an exposing process to the photoresist layer; and developing the photoresist layer, thereby forming a patterned photoresist layer. The patterned photoresist layer includes the silicon-containing unit.

Abstract: A photoresist composition and methods of using the same are disclosed. The photoresist includes a polymer backbone, an acid labile group (ALG) chemically bonded to the polymer backbone, a photo-acid generator (PAG), a solvent, and a silicon-containing unit that is chemically bonded to one of: the ALG and a crosslinker. A method of using the photoresist composition includes forming a layer of the photoresist over a substrate, performing an exposing process to the photoresist layer; and developing the photoresist layer, thereby forming a patterned photoresist layer. The patterned photoresist layer includes the silicon-containing unit.

Abstract: A photoresist composition and methods of using the same are disclosed. The photoresist includes a polymer backbone, an acid labile group (ALG) chemically bonded to the polymer backbone, a photo-acid generator (PAG), a solvent, and a silicon-containing unit that is chemically bonded to one of: the ALG and a crosslinker. A method of using the photoresist composition includes forming a layer of the photoresist over a substrate, performing an exposing process to the photoresist layer; and developing the photoresist layer, thereby forming a patterned photoresist layer. The patterned photoresist layer includes the silicon-containing unit.

Abstract: An electronic apparatus includes a sound-receiving module and a processor. The electronic apparatus is electronically connected to a first sound device and a second sound device. The first sound device receives a first sound signal having a first channel audio from the electronic apparatus and plays the first channel audio. The second sound device receives a second sound signal having a second channel audio from the electronic apparatus and plays the second channel audio. The sound-receiving module receives an audio to generate an input signal. The processor electrically connected to the sound-receiving module compares the input signal and a predetermined value. When the input signal is less than the predetermined value, the processor adjusts the first and second sound signals for the first sound device receiving the second sound signal and for the second sound device receiving the first sound signal.

Abstract: An anti-noise headset device and a sound processing method thereof are provided. The anti-noise headset device includes an audio receiving module and a control module. The audio receiving module is configured to receive several audio signals in several periods. The control module is electrically coupled to the audio receiving module. The control module is configured to store the audio signals received from a first period to an Nth period as sound data. The control module compares the audio signal received in an (N+1)th period with the sound data so as to generate a relevance value, N is an integer larger than zero. When the relevance value is smaller than a threshold value, the control module filters out a portion of the audio signal received in the (N+1)th period, in which the portion of the audio signal received in the (N+1)th period is relevant to the sound data.

Abstract: A stacked package includes a substrate, and a first structure bonded to the substrate. The first structure has a plurality of bumps, and a first hydrophilic coating is on sidewalls of the first structure. The stacked package further includes a second structure bonded to the plurality of bumps. The first hydrophilic coating is on sidewalls of the second structure. The first structure is between the second structure and the substrate. The stacked package further includes a housing, wherein the housing defines a volume enclosing the first structure and the second structure. A second hydrophilic coating is on sidewalls of an inner surface of the housing. The stacked package further includes a cooling fluid within the volume enclosing the first structure and the second structure. A top surface of the cooling fluid is above a top surface of the second structure.

Abstract: An anti-noise headset device and a sound processing method thereof are provided. The anti-noise headset device includes an audio receiving module and a control module. The audio receiving module is configured to receive several audio signals in several periods. The control module is electrically coupled to the audio receiving module. The control module is configured to store the audio signals received from a first period to an Nth period as sound data. The control module compares the audio signal received in an (N+1)th period with the sound data so as to generate a relevance value, N is an integer larger than zero. When the relevance value is smaller than a threshold value, the control module filters out a portion of the audio signal received in the (N+1)th period, in which the portion of the audio signal received in the (N+1)th period is relevant to the sound data.

Abstract: A stacked package includes a substrate, and a first structure bonded to the substrate. The first structure has a plurality of bumps, and a first hydrophilic coating is on sidewalls of the first structure. The stacked package further includes a second structure bonded to the plurality of bumps. The first hydrophilic coating is on sidewalls of the second structure. The first structure is between the second structure and the substrate. The stacked package further includes a housing, wherein the housing defines a volume enclosing the first structure and the second structure. A second hydrophilic coating is on sidewalls of an inner surface of the housing. The stacked package further includes a cooling fluid within the volume enclosing the first structure and the second structure. A top surface of the cooling fluid is above a top surface of the second structure.

Abstract: Provided are compounds with a donor moiety, a first acceptor moiety and a second acceptor moiety, as shown by Formula (I): With the unique molecular design, compounds of Formula (I) can provide a desirable power conversion efficiency. Moreover, this invention also provides organic thin-film solar cells comprising the above-mentioned compounds.

Abstract: Provided are compounds with a donor moiety, a first acceptor moiety and a second acceptor moiety, as shown by Formula (I): With the unique molecular design, compounds of Formula (I) can provide a desirable power conversion efficiency. Moreover, this invention also provides organic thin-film solar cells comprising the above-mentioned compounds.