Abstract: A method for CMP includes following operations. A metal stack is received. The metal layer stack includes at least a first metal layer and a second metal layer, and a top surface of the first metal layer and a top surface of the second metal layer are exposed. A protecting layer is formed over the second metal layer. A portion of the first metal layer is etched. The protecting layer protects the second metal layer during the etching of the portion of the first metal layer. A top surface of the etched first metal layer is lower than a top surface of the protecting layer. The protecting layer is removed from the second metal layer.

Abstract: Embodiments disclosed herein relate to using an implantation process and a melting anneal process performed on a nanosecond scale to achieve a high surface concentration (surface pile up) dopant profile and a retrograde dopant profile simultaneously. In an embodiment, a method includes forming a source/drain structure in an active area on a substrate, the source/drain structure including a first region comprising germanium, implanting a first dopant into the first region of the source/drain structure to form an amorphous region in at least the first region of the source/drain structure, implanting a second dopant into the amorphous region containing the first dopant, and heating the source/drain structure to liquidize and convert at least the amorphous region into a crystalline region, the crystalline region containing the first dopant and the second dopant.

Abstract: A method includes forming a gate stack on a first portion of a semiconductor substrate, removing a second portion of the semiconductor substrate on a side of the gate stack to form a recess, growing a semiconductor region starting from the recess, implanting the semiconductor region with an impurity, and performing a melt anneal on the semiconductor region. At least a portion of the semiconductor region is molten during the melt anneal.

Abstract: A connection structure includes a workpiece, and a coating layer disposed above the workpiece. A groove is formed on a surface of the coating layer. The connection structure further includes an object installed inside the groove and adhered to the workpiece.

Abstract: A connection structure includes a workpiece, and a coating layer disposed above the workpiece. A groove is formed on a surface of the coating layer. The connection structure further includes an object installed inside the groove and adhered to the workpiece.

Abstract: A closed water-container storing device with the water inlet/outlet, comprising a water storing bag container for storing water, a water inlet for the inflow of water from outside source to said water storing bag container, a water outlet for outflow of water within water storing bag container, and a float device for the control of stop/start operation of the inflow of water from outside source to said water storing bag container, when the water within said water storing bag container has reached a predetermined level.

Abstract: A closed water-container storing device with the water inlet/outlet, comprising a water storing bag container for storing water, a water inlet for the inflow of water from outside source to said water storing bag container, a water outlet for outflow of water within water storing bag container, and a float device for the control of stop/start operation of the inflow of water from outside source to said water storing bag container, when the water within said water storing bag container has reached a predetermined level.