Abstract: The present disclosure provides a semiconductor structure with having a source/drain feature with a central cavity, and a source/drain contact feature formed in central cavity of the source/drain region, wherein the source/drain contact feature is nearly wrapped around by the source/drain region. The source/drain contact feature may extend to a lower most of a plurality semiconductor layers.

Abstract: A light-emitting diode includes at least an N-type layer, a light-emitting layer and a P-type layer, wherein the light-emitting layer forms a “V”-shaped indentation or pit during epitaxial process and the V pit is filled in with at least one type of metal nanoparticles to generate surface plasma coupling effect and to improve recombination probability of holes and electrons, thus improving internal quantum efficiency; further, a V pit is generated in the N-type layer during epitaxial process; surface plasma coupling effect is generated by filling metal nanoparticles in the V pit to increase light reflection, light extraction efficiency and external quantum efficiency, thereby improving light emitting efficiency of LED; and the V pit is formed directly by adjusting growth rate, thickness, temperature, pressure or doping during epitaxial process instead of etching, which causes no damage to the LED epitaxial layer, thus simplifying process and improving device stability.