Patents by Inventor Li-Yu Wang

Li-Yu Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220246740
    Abstract: A semiconductor structure includes a substrate; a first structure over the substrate and having a first gate stack and two first gate spacers on two opposing sidewalls of the first gate stack; a second structure over the substrate and having a second gate stack and two second gate spacers on two opposing sidewalls of the second gate stack; a source/drain (S/D) feature over the substrate and adjacent to the first and the second gate stacks; an S/D contact over the S/D feature and between one of the first gate spacers and one of the second gate spacers; a conductive via disposed over and electrically connected to the S/D contact; and a dielectric liner layer. A first portion of the dielectric liner layer is disposed on a sidewall of the one of the first gate spacers and is directly above the S/D contact and spaced from the S/D contact.
    Type: Application
    Filed: April 25, 2022
    Publication date: August 4, 2022
    Inventors: Lin-Yu Huang, Li-Zhen Yu, Chia-Hao Chang, Cheng-Chi Chuang, Kuan-Lun Cheng, Chih-Hao Wang
  • Publication number: 20220246464
    Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a device, a first conductive structure disposed over the device, and the first conductive structure includes a first sidewall having a first portion and a second portion. The semiconductor device structure further includes a first spacer layer disposed on the first portion, a second conductive structure disposed adjacent the first conductive structure, and the second conductive structure includes a second sidewall having a third portion and a fourth portion. The semiconductor device structure further includes a second spacer layer disposed on the third portion, and an air gap is formed between the first conductive structure and the second conductive structure. The second portion, the first spacer layer, the fourth portion, and the second spacer layer are exposed to the air gap.
    Type: Application
    Filed: April 18, 2022
    Publication date: August 4, 2022
    Inventors: Lin-Yu HUANG, Li-Zhen YU, Chia-Hao CHANG, Cheng-Chi CHUANG, Kuan-Lun CHENG, Chih-Hao WANG
  • Publication number: 20220238749
    Abstract: The present disclosure provides a contact structure and an electronic device having the same. The contact structure includes: a substrate; a copper layer disposed on the substrate; an adhesion promotion layer disposed on the copper layer, wherein the adhesion promotion layer forms a monomolecular adsorption layer on the surface of the copper layer; and a silver nanowire layer disposed on the adhesion promotion layer, and the adhesive force between the copper layer and the silver nanowire layer is 3B or more. In the present disclosure, by disposing the adhesion promotion layer on the copper layer, in the stacked structure of the copper layer and the silver nanowire layer, the adhesive force between the copper layer and the silver nanowire layer is increased, so as to prevent a peeling phenomenon of the copper layer occurring in the subsequent yellow-light process.
    Type: Application
    Filed: January 22, 2021
    Publication date: July 28, 2022
    Inventors: Yi-Min Jiang, Xi-Zhao Wang, Li-Wei Mu, Shan-Yu Wu, Chih-Min Chen, Chao-Hui Kuo, Wei-Chuan Chao, Chia Jui Lin
  • Publication number: 20220208684
    Abstract: An interface of integrated circuit (IC) die includes a plurality of the contact elements formed as a contact element pattern corresponding to a parallel bus. The contact elements are arranged in an array of rows and columns and divided into a transmitting group and a receiving group. The contact elements of the transmitting group have a first contact element sequence and the contact elements of the receiving group have a second contact element sequence, the first contact element sequence is identical to the second contact element sequence. The contact elements with the first contact element sequence and the second contact element sequence are matched when the contact element pattern is geometrically rotated by 180° with respect to a row direction and a column direction.
    Type: Application
    Filed: December 28, 2020
    Publication date: June 30, 2022
    Applicants: Global Unichip Corporation, Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ting-Hao Wang, Ting-Chin Cho, Igor Elkanovich, Amnon Parnass, Chia-Hsiang Chang, Tsai-Ming Yang, Yen-Chung T. Chen, Ting-Hsu Chien, Yuan-Hung Lin, Chao-Ching Huang, Li-Ya Tseng, Pei Yu, Jia-Liang Chen, Yen-Wei Chen, Chung-Kai Wang, Chun-Hsu Chen, Yu-Ju Chang, Li-Hua Lin, Zanyu Yang
  • Patent number: 11374093
    Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a substrate, a source/drain contact disposed over the substrate, a first dielectric layer disposed on the source drain contact, an etch stop layer disposed on the first dielectric layer, and a source/drain conductive layer disposed in the etch stop layer and the first dielectric layer. The structure further includes a spacer structure disposed in the etch stop layer and the first dielectric layer. The spacer structure surrounds a sidewall of the source/drain conductive layer and includes a first spacer layer having a first portion and a second spacer layer adjacent the first portion of the first spacer layer. The first portion of the first spacer layer and the second spacer layer are separated by an air gap. The structure further includes a seal layer.
    Type: Grant
    Filed: November 25, 2020
    Date of Patent: June 28, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Lin-Yu Huang, Li-Zhen Yu, Cheng-Chi Chuang, Kuan-Lun Cheng, Chih-Hao Wang
  • Patent number: D299380
    Type: Grant
    Filed: January 14, 1986
    Date of Patent: January 17, 1989
    Inventor: Li-Yu Wang