Abstract: A semiconductor device includes: M*1st conductors in a first layer of metallization (M*1st layer) and being aligned correspondingly along different corresponding ones of alpha tracks and representing corresponding inputs of a cell region in the semiconductor device; and M*2nd conductors in a second layer of metallization (M*2nd layer) aligned correspondingly along beta tracks, and the M*2nd conductors including at least one power grid (PG) segment and one or more of an output pin or a routing segment; and each of first and second ones of the input pins having a length sufficient to accommodate at most two access points; each of the access points of the first and second input pins being aligned to a corresponding different one of first to fourth beta tracks; and the PG segment being aligned with one of the first to fourth beta tracks.

Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure on the fin structure, forming first and second S/D regions within the superlattice structure, forming a gate structure between the first and second S/D regions, forming first and second contact structures on first surfaces of the first and second S/D regions, and forming a third contact structure, on a second surface of the first S/D region, with a work function metal (WFM) silicide layer and a dual metal liner. The second surface is opposite to the first surface of the first S/D region and the WFM silicide layer has a work function value closer to a conduction band energy than a valence band energy of a material of the first S/D region.

Abstract: A substrate bonding method comprises the following steps. Firstly, a first substrate and a second substrate are provided, wherein a surface of the first substrate is covered by a first Ag layer and a surface of the second substrate is covered by a second Ag layer and a metallic layer from bottom to top, wherein the metallic layer comprises a first Sn layer. Secondly, a bonding process is performed by aligning the first and second substrates followed by bringing the metallic layer into contact with the first Ag layer followed by applying a load while heating to a predetermined temperature in order to form Ag3Sn intermetallic compounds. Finally, cool down and remove the load to complete the bonding process.

Abstract: A substrate bonding method comprises the following steps. Firstly, a first substrate and a second substrate are provided, wherein a surface of the first substrate is covered by a first Ag layer and a surface of the second substrate is covered by a second Ag layer and a metallic layer from bottom to top, wherein the metallic layer comprises a first Sn layer. Secondly, a bonding process is performed by aligning the first and second substrates followed by bringing the metallic layer into contact with the first Ag layer followed by applying a load while heating to a predetermined temperature in order to form Ag3Sn intermetallic compounds. Finally, cool down and remove the load to complete the bonding process.

Abstract: A joining device is provided for rails of a baby bed, in which the joining connects two adjacent rail tubes of the rail, where an end of each of the rail tubes is pivotally connected to the joining device. The joining device is formed as a saddle part in a shape having two upstanding side walls and an arched portion connected between top edges of the two side walls. The joining device further has a smooth contact face formed on each of the two sides of the arched portion and a smoothly trimmed face connected to the smooth contact face, so that the tube walls of the rail tubes are contacted with the smooth contact faces when the rail tubes are pivotally rotated close to the two sides of the arched portion.

Abstract: Disclosed is a joining device for the rails of a baby bed, in which the joining device is adapted for connecting two adjacent rail tubes of the rail and an end of each of the rail tubes is pivotally connected to said joining device, said joining device is formed as a saddle part in a shape, the joining device of a baby bed is characterized in that two outer edges of an iron plate at two ends of two shorter sides of an arched portion of said joining device are processed such that they are bent downwardly so as to be formed as smooth contact faces, and each of the backsides of said contact faces is further subject to a trimming process so as to be formed as a smoothly trimmed face in order to prevent a possibility that a fabric covering is directly cut off or broken when the fabric covering covered on a bed frame is gripped between the rail tubes and the arched portion of said joining device, and a possibility of generating an indent due to friction or pressing since the tube walls of said rail tubes are ramme