Patents by Inventor Liam Cheevers

Liam Cheevers has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9776409
    Abstract: A method for forming a fluidic ejection device is described. The method includes depositing a first layer on a silicon wafer, the first layer including a first photoresist, and exposing, at a first energy level, a portion of the first photoresist. The method also includes depositing a second layer on the first layer, the second layer including a second photoresist that is more sensitive to light than the first photoresist, and exposing, at a second energy level, a portion of the second photoresist. The second energy level is less than the first energy level. The method also includes developing unexposed portions of the first photoresist and the second photoresist to form an enclosed firing chamber and a nozzle.
    Type: Grant
    Filed: April 24, 2014
    Date of Patent: October 3, 2017
    Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
    Inventors: Kevin Dooley, John Larkin, Liam Cheevers, Kenneth Hickey, Graeme Scott
  • Patent number: 9780028
    Abstract: A dielectric layer includes a reflow via. The reflow via is formed by reflow of the dielectric layer away from a raised feature. An interconnect is in contact with the raised feature through the reflow via.
    Type: Grant
    Filed: November 29, 2016
    Date of Patent: October 3, 2017
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Kevin Dooley, Roger McQuaid, Liam Cheevers, David Fitzpatrick, Lorraine Byrne
  • Publication number: 20170151781
    Abstract: A method for forming a fluidic ejection device is described. The method includes depositing a first layer on a silicon wafer, the first layer including a first photoresist, and exposing, at a first energy level, a portion of the first photoresist. The method also includes depositing a second layer on the first layer, the second layer including a second photoresist that is more sensitive to light than the first photoresist, and exposing, at a second energy level, a portion of the second photoresist. The second energy level is less than the first energy level. The method also includes developing unexposed portions of the first photoresist and the second photoresist to form an enclosed firing chamber and a nozzle.
    Type: Application
    Filed: April 24, 2014
    Publication date: June 1, 2017
    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
    Inventors: Kevin Dooley, John Larkin, Liam Cheevers, Kenneth Hickey, Graeme Scott
  • Publication number: 20170084533
    Abstract: A dielectric layer includes a reflow via. The reflow via is formed by reflow of the dielectric layer away from a raised feature. An interconnect is in contact with the raised feature through the reflow via.
    Type: Application
    Filed: November 29, 2016
    Publication date: March 23, 2017
    Inventors: Kevin Dooley, Roger McQuaid, Liam Cheevers, David Fitzpatrick, Lorraine Byrne
  • Patent number: 9583432
    Abstract: A dielectric layer includes a reflow via. The reflow via is formed by reflow of the dielectric layer. An interconnect is in contact through the reflow via.
    Type: Grant
    Filed: January 29, 2013
    Date of Patent: February 28, 2017
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Kevin Dooley, Roger McQuaid, Liam Cheevers, David Fitzpatrick, Lorraine Byrne
  • Publication number: 20160104675
    Abstract: A dielectric layer includes a reflow via. The reflow via is formed by reflow of the dielectric layer. An interconnect is in contact through the reflow via.
    Type: Application
    Filed: January 29, 2013
    Publication date: April 14, 2016
    Inventors: Kevin Dooley, Roger McQuaid, Liam Cheevers, David Fitzpatrick, Lorraine Byrne