Abstract: A variable bi-phase modulator circuit for microwave signals includes a quadrature power divider (1) having signal input and output ports (2 and 3) and two control ports (4 and 5), and two variable resistors each having an input port (11). Each of the two variable resistors includes first and second microwave field-effect transistors (F1 and F2), the drains of which are coupled together via an intermediate resistor (R). These resistors can be formed using microwave monolithic integrated circuit technology and can have very good impedance characteristics. The input port (11) of the variable resistor has a connection to the intermediate resistor (R) and to the drain of the first transistor (F2). Each transistor is connected with zero dc bias between its source and drain and has a channel resistance which changes with change in gate voltage (VG1, VG2).