Patents by Inventor Lian-Fa Hung

Lian-Fa Hung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for raising etching selectivity of oxide to photoresist
    Publication number: 20020102500
    Abstract: In the present invention, a method for raising etching selectivity of an insulating material to a photoresist comprises providing an insulating layer. A photoresist layer is formed on the insulating layer and the photoresist layer has a contact pattern. Next, a protecting layer is formed on surface of the photoresist layer and sidewalls of the contact pattern. Then the partial the insulating layer is removed by using the protecting layer and the photoresist layer as an etching mask. The polymer layer is deposited in gases mixture surrounding of Ar, CH3F, and C4F8. As a key structure of the present invention, the protecting layer can improve the etching selectivity of the insulating layer to photoresist.
    Type: Application
    Filed: January 31, 2001
    Publication date: August 1, 2002
    Inventors: Lian-Fa Hung, Chan-Lon Yang
  • High stress oxide to eliminate BPSG/SiN cracking
    Patent number: 6136688
    Abstract: The present invention is a method of capping with a high compressive stress oxide, a boron phospho-silicate glass (BPSG) interlayer dielectric (ILD) gapfill that has been deposited on a topographic silicon substrate, in order to eliminate the formation of cracks in subsequently deposited silicon nitride (SiN) layers, other subsequently deposited high tensile stress layers and cracks that result from other post-BPSG deposition high temperature processes.
    Type: Grant
    Filed: October 20, 1999
    Date of Patent: October 24, 2000
    Assignee: Vanguard International Semiconductor Corporation
    Inventors: Keng-Chu Lin, Kuang-Chao Chen, Rong-Wu Chien, Lian-Fa Hung, Pang-Yen Tsai, Ching-Chang Chang