Abstract: A remote server, a remote control system and a remote control method are provided. The remote server includes a connector and a processor. The connector is connected to a KVM switch. The KVM switch is connected to at least two machines. The connector receives a plurality of screen images of the machines through the KVM switch, wherein the screen images are respectively captured at the machines. The processor generates a plurality of control instructions according to the screen images, respectively. The control instructions are transmitted from the connector to the machines through the KVM switch, respectively.

Abstract: A method of monitoring a processing system for processing a substrate is provided. The method includes the following steps: acquiring data from the processing system for a plurality of parameters, the data including a plurality of data values; grouping the parameters into a plurality of sub-groups, each of the sub-groups including a plurality of correlated parameters; constructing a principle components analysis (PCA) model from the data values for the correlated parameters in a first one of the sub-groups, including normalizing the data values in the first one of the sub-groups with a first weighting factor and a second weighting factor, wherein the first weighting factor is different from the second weighting factor; and determining a statistical quantity using the PCA model.

Abstract: A method of monitoring a processing system for processing a substrate is provided. The method includes the following steps: acquiring data from the processing system for a plurality of parameters, the data including a plurality of data values; grouping the parameters into a plurality of sub-groups, each of the sub-groups including a plurality of correlated parameters; constructing a principle components analysis (PCA) model from the data values for the correlated parameters in a first one of the sub-groups, including normalizing the data values in the first one of the sub-groups with a first weighting factor and a second weighting factor, wherein the first weighting factor is different from the second weighting factor; and determining a statistical quantity using the PCA model.

Abstract: A method of virtual metrology is disclosed. Process data and measurement values corresponding to a workpiece are collected. The process data and the measurement values are used to establish a conjecture model. A theoretical model corresponding to the workpiece and the conjecture model is used to establish another conjecture model. The another conjecture model is used to establish a virtual metrology value. The virtual metrology value is used to predict properties of a subsequently manufactured workpiece.

Abstract: A method for fabricating a metal-insulator-metal (MIM) capacitor includes providing a substrate comprising a bottom electrode, forming a dielectric layer positioned on the bottom electrode, and forming a top electrode positioned on the dielectric layer. The dielectric layer includes a silicon nitride film, the silicon nitride film has a plurality of Si—H bonds and a plurality of N—H bonds, and a ratio of Si—H bonds to N—H bonds being equal to or smaller than 0.5.

Abstract: A method for fabricating a metal-insulator-metal (MIM) capacitor includes providing a substrate comprising a bottom electrode, forming a dielectric layer positioned on the bottom electrode, and forming a top electrode positioned on the dielectric layer. The dielectric layer includes a silicon nitride film, the silicon nitride film has a plurality of Si—H bonds and a plurality of N—H bonds, and a ratio of Si—H bonds to N—H bonds being equal to or smaller than 0.5.

Abstract: A metal-insulator-metal (MIM) capacitor that includes a silicon nitride (SiN) dielectric film is disclosed. The MIM capacitor includes a bottom electrode, a top electrode and a dielectric layer positioned between the bottom electrode and the top electrode. The dielectric layer includes a silicon nitride film that has a plurality of silicon-hydrogen bonds and a plurality of nitride-hydrogen bonds. A ratio of silicon-hydrogen bonds to nitride-hydrogen bonds is equal to or smaller than 0.5. Accordingly, the nitrogen-rich and compressive silicon nitride film can improve the breakdown voltage of the MIM capacitor.

Abstract: A metal-insulator-metal (MIM) capacitor that includes a silicon nitride (SiN) dielectric film is disclosed. The MIM capacitor includes a bottom electrode, a top electrode and a dielectric layer positioned between the bottom electrode and the top electrode. The dielectric layer includes a silicon nitride film that has a plurality of silicon-hydrogen bonds and a plurality of nitride-hydrogen bonds. A ratio of silicon-hydrogen bonds to nitride-hydrogen bonds is equal to or smaller than 0.5. Accordingly, the nitrogen-rich and compressive silicon nitride film can improve the breakdown voltage of the MIM capacitor.