Abstract: Provided is a thin film semiconductor device that exploits excitonic characteristics of various organic semiconductor materials. The device may include an anode (120), a cathode (170), and a donor-acceptor heterojunction (150) disposed between the anode and the cathode. The donor-acceptor heterojunction may further include an acceptor material (404) having a highest occupied molecular orbital (HOMO) and a lowest unoccupied molecular orbital (LUMO), and a donor material (402) comprising a hybrid organic-inorganic metal halide perovskite semiconductor. Other embodiments are disclosed and additional embodiments are also possible.

Abstract: An apparatus is provided that includes a plurality of pan-tilt-zoom (PTZ) cameras, each of the plurality of PTZ cameras having a respective field of view that covers a respective portion of a secured geographic area, a memory that saves a plurality of surveillance scenarios, each of the plurality of surveillance scenarios including a respective pan, tilt, and a zoom position for each of the plurality of PTZ cameras, and a user interface that receives a selection of one of the plurality of surveillance scenarios from a human user and, in response, simultaneously displays respective real time video images from each of the plurality of PTZ cameras using the respective pan, tilt, and zoom positions of the one of the plurality of surveillance scenarios.

Abstract: A method and device for allocating radio resource are provided. The method includes: a radio resource request message from a terminal is received via a Physical Random Access Channel (PRACH) or a Physical Uplink Control Channel (PUCCH), wherein location information of the terminal and/or a movement speed of the terminal is carried in the request message; a radio resource allocated to the terminal is determined according to the location information and/or the movement speed; and instruction information is sent to the terminal, wherein the indication information indicates the terminal to access the determined radio resource allocated to the terminal.

Abstract: An apparatus including a plurality of pan-tilt-zoom (PTZ) cameras each with a field of view that covers a portion of a secured geographic area, a memory that saves a plurality of surveillance scenarios, each of the plurality of surveillance scenarios including a respective pan, tilt and a zoom position for each of the plurality of PTZ cameras and a user interface that receives a selection of one of the plurality of surveillance scenarios from a human user and, in response, simultaneously displays real time video images from each of the plurality of PTZ cameras using the saved pan, tilt and zoom positions of the selected surveillance scenario.

Abstract: A method for forming a polycrystalline film, a polycrystalline film formed by the method and a thin film transistor fabricated from the polycrystalline film are provided. The method comprises the steps of: providing a substrate; forming a thermal conductor layer on the substrate; etching the thermal conductor layer until the substrate is exposed to form a thermal conductor pattern; forming a seed layer on the thermal conductor layer and the substrate; etching the seed layer to form seed crystals on both sidewalls of the thermal conductor; forming an amorphous layer on the substrate, the thermal conductor layer and the seed crystals; etching the amorphous layer; and recrystallizing the amorphous layer to form a polycrystalline layer.

Abstract: A method for forming a polycrystalline film, a polycrystalline film formed by the method and a thin film transistor fabricated from the polycrystalline film are provided. The method comprises the steps of: providing a substrate; forming a thermal conductor layer on the substrate; etching the thermal conductor layer until the substrate is exposed to form a thermal conductor pattern; forming a seed layer on the thermal conductor layer and the substrate; etching the seed layer to form seed crystals on both sidewalls of the thermal conductor; forming an amorphous layer on the substrate, the thermal conductor layer and the seed crystals; etching the amorphous layer; and recrystallizing the amorphous layer to form a polycrystalline layer.