Patents by Inventor Liang-An HUANG

Liang-An HUANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240234572
    Abstract: An extended drain metal oxide semiconductor transistor includes a substrate. A gate is disposed on the substrate. A source doped region is disposed in the substrate at one side of the gate. A drain doped region is disposed in the substrate at another side of the gate. A thin gate dielectric layer is disposed under the gate. A thick gate dielectric layer is disposed under the gate. The thick gate dielectric layer extends from the bottom of the gate to contact the drain doped region. A second conductive type first well is disposed in the substrate and surrounds the source doped region and the drain doped region. A deep well is disposed within the substrate and surrounds the second conductive type first well.
    Type: Application
    Filed: February 10, 2023
    Publication date: July 11, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Liang-An Huang, Ming-Hua Tsai, Wen-Fang Lee, Chin-Chia Kuo, Jung Han, Chun-Lin Chen, Ching-Chung Yang, Nien-Chung Li
  • Patent number: 11195905
    Abstract: A metal-oxide-semiconductor (MOS) transistor includes a substrate. The substrate has a plurality of trenches extending along a first direction and located on a top portion of the substrate. A gate structure line is located on the substrate and extends along a second direction intersecting with the first direction and crossing over the trenches. A first doped line is located in the substrate, located at a first side of the gate structure line, and crosses over the trenches. A second doped line is located in the substrate, located at a second side of the gate structure line, and crosses over the trenches.
    Type: Grant
    Filed: March 19, 2019
    Date of Patent: December 7, 2021
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hsiang-Hua Hsu, Liang-An Huang, Sheng-Chen Chung, Chen-An Kuo, Chiu-Te Lee, Chih-Chung Wang, Kuang-Hsiu Chen, Ke-Feng Lin, Yan-Huei Li, Kai-Ting Hu
  • Publication number: 20200266267
    Abstract: A metal-oxide-semiconductor (MOS) transistor includes a substrate. The substrate has a plurality of trenches extending along a first direction and located on a top portion of the substrate. A gate structure line is located on the substrate and extends along a second direction intersecting with the first direction and crossing over the trenches. A first doped line is located in the substrate, located at a first side of the gate structure line, and crosses over the trenches. A second doped line is located in the substrate, located at a second side of the gate structure line, and crosses over the trenches.
    Type: Application
    Filed: March 19, 2019
    Publication date: August 20, 2020
    Applicant: United Microelectronics Corp.
    Inventors: HSIANG-HUA HSU, Liang-An Huang, Sheng-Chen Chung, Chen-An Kuo, Chiu-Te Lee, Chih-Chung Wang, Kuang-Hsiu Chen, Ke-Feng Lin, Yan-Huei Li, Kai-Ting Hu
  • Patent number: 9437471
    Abstract: A method of manufacturing shallow trench isolations is provided in the present invention, which includes the steps of providing a substrate, performing a zero etch to form preliminary trenches in the substrate, performing a STI etch to the preliminary trenches to form final trenches, where the final trenches are deeper and steeper than the preliminary trenches, and filling up the final trenches with insulating material to form shallow trench isolations.
    Type: Grant
    Filed: December 17, 2014
    Date of Patent: September 6, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventor: Liang-An Huang
  • Publication number: 20160181146
    Abstract: A method of manufacturing shallow trench isolations is provided in the present invention, which includes the steps of providing a substrate, performing a zero etch to form preliminary trenches in the substrate, performing a STI etch to the preliminary trenches to form final trenches, where the final trenches are deeper and steeper than the preliminary trenches, and filling up the final trenches with insulating material to form shallow trench isolations.
    Type: Application
    Filed: December 17, 2014
    Publication date: June 23, 2016
    Inventor: Liang-An Huang
  • Patent number: 8815703
    Abstract: A fabricating method of a shallow trench isolation structure includes the following steps. Firstly, a substrate is provided, wherein a high voltage device area is defined in the substrate. Then, a first etching process is performed to partially remove the substrate, thereby forming a preliminary shallow trench in the high voltage device area. Then, a second etching process is performed to further remove the substrate corresponding to the preliminary shallow trench, thereby forming a first shallow trench in the high voltage device area. Afterwards, a dielectric material is filled in the first shallow trench, thereby forming a first shallow trench isolation structure.
    Type: Grant
    Filed: November 5, 2013
    Date of Patent: August 26, 2014
    Assignee: United Microelectronics Corporation
    Inventors: Liang-An Huang, Yu-Chun Huang, Chin-Fu Lin, Yu-Ciao Lin, Yu-Chieh Lin, Hsin-Liang Liu, Chun-Hung Cheng, Yuan-Cheng Yang, Yau-Kae Sheu
  • Publication number: 20140073109
    Abstract: A fabricating method of a shallow trench isolation structure includes the following steps. Firstly, a substrate is provided, wherein a high voltage device area is defined in the substrate. Then, a first etching process is performed to partially remove the substrate, thereby forming a preliminary shallow trench in the high voltage device area. Then, a second etching process is performed to further remove the substrate corresponding to the preliminary shallow trench, thereby forming a first shallow trench in the high voltage device area. Afterwards, a dielectric material is filled in the first shallow trench, thereby forming a first shallow trench isolation structure.
    Type: Application
    Filed: November 5, 2013
    Publication date: March 13, 2014
    Applicant: UNITED MICROELECTRONICS CORPORATION
    Inventors: Liang-An Huang, Yu-Chun Huang, Chin-Fu Lin, Yu-Ciao Lin, Yu-Chieh Lin, Hsin-Liang Liu, Chun-Hung Cheng, Yuan-Cheng Yang, Yau-Kae Sheu
  • Publication number: 20130043513
    Abstract: A fabricating method of a shallow trench isolation structure includes the following steps. Firstly, a substrate is provided, wherein a high voltage device area is defined in the substrate. Then, a first etching process is performed to partially remove the substrate, thereby forming a preliminary shallow trench in the high voltage device area. Then, a second etching process is performed to further remove the substrate corresponding to the preliminary shallow trench, thereby forming a first shallow trench in the high voltage device area. Afterwards, a dielectric material is filled in the first shallow trench, thereby forming a first shallow trench isolation structure.
    Type: Application
    Filed: August 19, 2011
    Publication date: February 21, 2013
    Applicant: UNITED MICROELECTRONICS CORPORATION
    Inventors: Liang-An HUANG, Yu-Chun Huang, Chin-Fu Lin, Yu-Ciao Lin, Yu-Chieh Lin, Hsin-Liang Liu, Chun-Hung Cheng, Yuan-Cheng Yang, Yau-Kae Sheu