Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is ?13.

Abstract: A matrix computing device and an operation method for the matrix computing device are provided. The matrix computing device includes a storage unit, a control circuit, and a computing circuit. The storage unit includes a weight matrix. The control circuit re-orders an arrangement order of weights in the weight matrix according to a shape of an output matrix to determine a weight readout order of the weights. The computing circuit receives the weights based on the weight readout order, and performs a matrix computation on the weights and an input matrix to generate a computing matrix. The control circuit performs a reshape transformation on the computing matrix to generate the output matrix, and writes the output matrix to the storage unit.

Abstract: In a method for obtaining the equivalent oxide thickness of a dielectric layer, a first semiconductor capacitor including a first silicon dioxide layer and a second semiconductor capacitor including a second silicon dioxide layer are provided and a modulation voltage is applied to the semiconductor capacitors to measure a first scanning capacitance microscopic signal and a second scanning capacitance microscopic signal. According to the equivalent oxide thicknesses of the silicon dioxide layers and the scanning capacitance microscopic signals, an impedance ratio is calculated. The modulation voltage is applied to a third semiconductor capacitor including a dielectric layer to measure a third scanning capacitance microscopic signal. Finally, the equivalent oxide thickness of the dielectric layer is obtained according to the equivalent oxide thickness of the first silicon dioxide layer, the first scanning capacitance microscopic signal, third scanning capacitance microscopic signal, and the impedance ratio.

Abstract: An integrated circuit includes a first-voltage power rail and a second-voltage power rail in a first connection layer, and includes a first-voltage underlayer power rail and a second-voltage underlayer power rail below the first connection layer. Each of the first-voltage and second-voltage power rails extends in a second direction that is perpendicular to a first direction. Each of the first-voltage and second-voltage underlayer power rails extends in the first direction. The integrated circuit includes a first via-connector connecting the first-voltage power rail with the first-voltage underlayer power rail, and a second via-connector connecting the second-voltage power rail with the second-voltage underlayer power rail.

Abstract: The present disclosure provides a method for preparing a composition including mesenchymal stem cells, extracellular vesicles produced by the mesenchymal stem cells, and growth factors, the composition prepared by the method, and use of the composition for treating arthritis. The composition of the present disclosure achieves the effect of treating arthritis through various efficacy experiments.

Abstract: A defect detection and removal apparatus including a removing unit, an image capturing unit, and a determining unit is provided. The removing unit is configured to remove at least one defective micro-element on a substrate. The image capturing unit is configured to capture a detection image of at least one defective micro-element correspondingly on the substrate. The determining unit is coupled to the image capturing unit and the removing unit. The image capturing unit executes capturing a first detection image before the removing unit executes removing a defective micro-element, and executes capturing a second detection image after the removing unit executes removing the defective micro-element. The determining unit confirms whether the defective micro-element has been removed according to the first and second detection image obtained from the image capturing unit. A defect detection and removal method is also provided.

Abstract: The present disclosure provides a method for treating liver cirrhosis by using a composition including mesenchymal stem cells, extracellular vesicles produced by the mesenchymal stem cells, and growth factors. The composition of the present disclosure achieves the effect of treating liver cirrhosis through various efficacy experiments.

Abstract: A method for forming a photomask includes the following steps. A first target pattern is provided, wherein the first target pattern includes a first pattern area and a second pattern area. The first pattern area includes a block pattern. The second pattern area includes multiple stripe patterns. A first sidewall reset area is defined in the second pattern area. A retarget procedure is executed on the first target pattern to obtain a second target pattern. The photomask is formed based on the second target pattern.

Abstract: A method includes etching a gate stack in a wafer to form a trench, depositing a silicon nitride liner extending into the trench, and depositing a silicon oxide layer. The process of depositing the silicon oxide layer includes performing a treatment process on the wafer using a process gas including nitrogen and hydrogen, and performing a soaking process on the wafer using a silicon precursor.

Abstract: A method includes providing a substrate having a surface such that a first hard mask layer is formed over the surface and a second hard mask layer is formed over the first hard mask layer, forming a first pattern in the second hard mask layer, where the first pattern includes a first mandrel oriented lengthwise in a first direction and a second mandrel oriented lengthwise in a second direction different from the first direction, and where the first mandrel has a top surface, a first sidewall, and a second sidewall opposite to the first sidewall, and depositing a material towards the first mandrel and the second mandrel such that a layer of the material is formed on the top surface and the first sidewall but not the second sidewall of the first mandrel.

Abstract: Provided are a fibroblast activation protein inhibitor (FAPI) dimer compound, an FAPI dimer-based positron emission tomography (PET) imaging agent for tumor diagnosis, and a preparation method and use thereof. An amphiphilic polyethylene glycol (PEG) chain and a dimerized structure of FAPI in the FAPI dimer compound with a structure shown in formula I can improve the in vivo kinetic properties of the compound and prolong a residence time of the compound in a tumor, thereby improving the uptake and imaging effects in the tumor. The accurate tumor diagnosis can be achieved by labeling the FAPI dimer compound with a diagnostic nuclide (68Ga), which has promising application prospects in PET imaging for diagnosis and in the preparation of a therapeutic nuclide (such as 177Lu or 90Y)-labeled drug for treating a FAP-?-expressing tumor.

Abstract: The present invention provides a supporting hook structure, comprising a sleeve, a fixing rod, a first limit unit, a hook and a fixing device. The fixing rod is connected to the side surface of the sleeve. The hook body is connected to one end of the sleeve. The first limit unit is arranged on the side surface of the sleeve and adjacent to the hook body. The first limit unit makes the hook body rotates with the axis direction of the sleeve as a rotation axis. The fixing device is connected to the other end of the sleeve to fix the rotating position of the hook body. Through the above, the hook part enters the proximal thigh from a surgical entrance and the hook part rotates to make the hook part abut against the proximal femur to complete the positioning and fixation of the femur hook structure to the femur.

Abstract: An inspection system includes an excitation light source, a voltage-sensing film, an illumination light source, an image capture device. The excitation light source provides an excitation beam to light-emitting diodes to generate open-circuit voltages. The voltage-sensing film is at a top side of the light-emitting diodes and includes a voltage-sensing medium layer and a first electrode layer. The first electrode layer is in the voltage-sensing medium layer to provide a gain effect of the open-circuit voltages, so that the voltage-sensing medium layer senses the open-circuit voltages, and a display of the voltage-sensing medium layer is changed with a portion or all of the open-circuit voltages. The illumination light source provides an illumination beam to the voltage-sensing film to generate a sensing image according to a display change. The image capture device is on a transmission path of the sensing image and receives the sensing image to generate an inspection result.

Abstract: In an aspect of the disclosure, a method, a computer-readable medium, and an apparatus are provided. The apparatus may be a UE. The UE sends a request message to a core network. The request message requests joining one or more requested multicast broadcast service (MBS) sessions. The UE receives a response message from the core network. The response message contains received MBS information indicating one or more admitted MBS sessions. The received MBS information includes a respective IP address type (IPAT) field. The IPAT field indicates a type of an IP address corresponding to each of the one or more admitted MBS sessions. The UE decodes the IP address corresponding to each of the one or more admitted MBS sessions according to the type indicated by the respective IPAT field.

Abstract: A method for fabricating semiconductor devices includes forming channel regions over a substrate. The channel regions, in parallel with one another, extend along a first lateral direction. Each channel region includes at least a respective pair of epitaxial structures. The method includes forming a gate structure over the channel regions, wherein the gate structure extends along a second lateral direction. The method includes removing, through a first etching process, a portion of the gate structure that was disposed over a first one of the channel regions. The method includes removing, through a second etching process, a portion of the first channel region. The second etching process includes one silicon etching process and one silicon oxide deposition process. The method includes removing, through a third etching process controlled based on a pulse signal, a portion of the substrate that was disposed below the removed portion of the first channel region.

Abstract: A backlight module including a light guide plate, a light source, a diffuse reflector and a light-splitting film is provided. The light guide plate has a light incident surface, and a light-emitting surface and a bottom surface which are respectively connected to the light incident surface and opposite to each other. The light source is disposed on one side of the light incident surface of the light guide plate. The diffuse reflector is disposed on one side of the bottom surface of the light guide plate. The light-splitting film is disposed between the light guide plate and the diffuse reflector. The light-splitting film has a substrate and a plurality of first optical microstructures disposed on one side of the substrate. An extending direction of the first optical microstructures intersects with the light incident surface of the light guide plate. A display apparatus using the backlight module is also provided.

Abstract: A method for forming a package structure is provided. The method includes forming first conductive structures and a first semiconductor die on a same side of a redistribution structure. The method includes forming an interposer substrate over the redistribution structure, wherein the first semiconductor die is between the interposer substrate and the redistribution structure, and edges of the interposer substrate extend beyond edges of the first semiconductor die. The method includes forming a second semiconductor die on the redistribution structure, wherein the first semiconductor die and the second semiconductor die are disposed on opposite sides of the redistribution structure.

Abstract: An electrode controls transmittance of a blocking layer over a photodiode of a pixel sensor (e.g., a photodiode of a small pixel detector) by changing oxidation of a metal material included in the blocking layer. By using the electrode to adjust transmittance of the blocking layer, pixel sensors for different uses and/or products may be produced using a single manufacturing process. As a result, power and processing resources are conserved that otherwise would have been expended in switching manufacturing processes. Additionally, production time is decreased (e.g., by eliminating downtime that would otherwise have been used to reconfigure fabrication machines.

Abstract: A door lock includes a latch driving device having a thumb turn that can be switched between a locking position not permitting movement of a latch to an unlatching position when an outer handle is pivoted and an unlocking position permitting movement of the latch to unlatching position when the outer handle is pivoted. The thumb turn includes an actuator controlling a switch to a conductive state or a non-conductive state. When the thumb turn is in the locking position, the switch is in the conductive state, and a lighting element controlled by the switch generates light transmitting through the first lid. When the thumb turn is in the unlocking position, the switch is in the non-conductive state, and the lighting element does not generate light. Thus, the locking or unlocking state of the door lock can be identified by sight.

Abstract: Structures and methods of forming fan-out packages are provided. The packages described herein may include a cavity substrate, one or more semiconductor devices located in a cavity of the cavity substrate, and one or more redistribution structures. Embodiments include a cavity preformed in a cavity substrate. Various devices, such as integrated circuit dies, packages, or the like, may be placed in the cavity. Redistribution structures may also be formed.