Patents by Inventor Liang Ch O Hsia

Liang Ch O Hsia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Copper recess formation using chemical process for fabricating barrier cap for lines and vias
    Patent number: 6706625
    Abstract: A method of fabricating a planarized barrier cap layer over a metal structure comprising the following steps. A substrate having an opening formed therein is provided. The substrate having an upper surface. A planarized metal structure is formed within the opening. The planarized metal structure being substantially planar with the upper surface of the substrate. A portion of the planarized metal structure is removed using a reverse-electrochemical plating process to recess the metal structure from the upper surface of the substrate. A barrier cap layer is formed over the substrate and the recessed metal structure. The excess of the barrier cap layer is removed from over the substrate by a planarization process to form the planarized barrier cap layer over the metal structure.
    Type: Grant
    Filed: December 6, 2002
    Date of Patent: March 16, 2004
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: John Sudijono, Liang Ch O Hsia, Liu Wu Ping