Patents by Inventor Liang-Chen Chi
Liang-Chen Chi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9876083Abstract: Semiconductor devices, FinFET devices and methods of forming the same are disclosed. One of the semiconductor devices includes a substrate, a gate over the substrate and a gate dielectric layer between the gate and the substrate. The gate dielectric layer includes an oxide-inhibiting layer having a dielectric constant greater than about 8 and being in an amorphous state.Type: GrantFiled: January 29, 2016Date of Patent: January 23, 2018Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Liang-Chen Chi, Chia-Ming Tsai, Chin-Kun Wang, Wei-Cheng Wang, Miin-Jang Chen
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Publication number: 20170222000Abstract: Semiconductor devices, FinFET devices and methods of forming the same are disclosed. One of the semiconductor devices includes a substrate, a gate over the substrate and a gate dielectric layer between the gate and the substrate. The gate dielectric layer includes an oxide-inhibiting layer having a dielectric constant greater than about 8 and being in an amorphous state.Type: ApplicationFiled: January 29, 2016Publication date: August 3, 2017Inventors: Liang-Chen Chi, Chia-Ming Tsai, Chin-Kun Wang, Wei-Cheng Wang, Miin-Jang Chen
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Patent number: 9312138Abstract: A method for forming a semiconductor device is provided. The method includes providing a semiconductor substrate. The method includes forming a buffer layer over the semiconductor substrate. The buffer layer is in an amorphous state. The method includes nitriding the buffer layer into a nitride buffer layer. The method includes forming a gate dielectric layer over the nitride buffer layer. The method includes performing a thermal annealing process to convert the gate dielectric layer into a crystalline gate dielectric layer. The method includes forming a gate electrode over the crystalline gate dielectric layer.Type: GrantFiled: June 18, 2015Date of Patent: April 12, 2016Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Liang-Chen Chi, Chia-Ming Tsai, Chin-Kun Wang, Jhih-Jie Huang, Miin-Jang Chen
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Patent number: 9306024Abstract: A semiconductor device and methods of formation are provided. A semiconductor device includes a dielectric film over a dielectric layer. The dielectric film includes a crystalline structure having a substantially uniform composition of zirconium, nitrogen and oxygen. The dielectric film is formed through in situ nitrogen plasma doping of a zirconium layer. The dielectric film functions as a gate dielectric. The dielectric film has a high dielectric constant between about 28-29 and has a low leakage current density of about 4.79×10?5 A/cm2. The substantially uniform distribution of nitrogen throughout the zirconium oxide of the dielectric film increases the k value of the dielectric film by between about 15% to about 17% as compared to a dielectric film that has a non-uniform distribution of nitrogen through a zirconium oxide layer.Type: GrantFiled: January 29, 2014Date of Patent: April 5, 2016Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITEDInventors: Liang-Chen Chi, Chia-Ming Tsai, Chin-Kun Wang, Jhih-Jie Huang, Miin-Jang Chen
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Patent number: 9196718Abstract: A semiconductor substructure with improved performance and a method of forming the same is described. The semiconductor substructure includes a dielectric film over a substrate, the dielectric film including at least one metal dielectric layer, at least one oxygen-donor layer, and at least one nitride-incorporation layer.Type: GrantFiled: February 20, 2013Date of Patent: November 24, 2015Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Liang-Chen Chi, Chia-Ming Tsai, Yu-Min Chang, Chin-Kun Wang, Miin-Jang Chen, Li-Tien Huang
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Publication number: 20150287605Abstract: A method for forming a semiconductor device is provided. The method includes providing a semiconductor substrate. The method includes forming a buffer layer over the semiconductor substrate. The buffer layer is in an amorphous state. The method includes nitriding the buffer layer into a nitride buffer layer. The method includes forming a gate dielectric layer over the nitride buffer layer. The method includes performing a thermal annealing process to convert the gate dielectric layer into a crystalline gate dielectric layer. The method includes forming a gate electrode over the crystalline gate dielectric layer.Type: ApplicationFiled: June 18, 2015Publication date: October 8, 2015Applicant: Taiwan Semiconductor Manufacturing Co., LtdInventors: Liang-Chen CHI, Chia-Ming TSAI, Chin-Kun WANG, Jhih-Jie HUANG, Miin-Jang CHEN
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Publication number: 20150214321Abstract: A semiconductor device and methods of formation are provided. A semiconductor device includes a dielectric film over a dielectric layer. The dielectric film includes a crystalline structure having a substantially uniform composition of zirconium, nitrogen and oxygen. The dielectric film is formed through in situ nitrogen plasma doping of a zirconium layer. The dielectric film functions as a gate dielectric. The dielectric film has a high dielectric constant between about 28-29 and has a low leakage current density of about 4.79×10?5 A/cm2. The substantially uniform distribution of nitrogen throughout the zirconium oxide of the dielectric film increases the k value of the dielectric film by between about 15% to about 17% as compared to a dielectric film that has a non-uniform distribution of nitrogen through a zirconium oxide layer.Type: ApplicationFiled: January 29, 2014Publication date: July 30, 2015Inventors: Liang-Chen Chi, Chia-Ming Tsai, Chin-Kun Wang, Jhih-Jie Huang, Miin-Jang Chen
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Patent number: 9064865Abstract: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a nitride buffer layer over the semiconductor substrate, and the nitride buffer layer is in an amorphous state. The semiconductor device also includes a crystalline gate dielectric layer over the nitride buffer layer and a gate electrode over the crystalline gate dielectric layer.Type: GrantFiled: October 11, 2013Date of Patent: June 23, 2015Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Liang-Chen Chi, Chia-Ming Tsai, Chin-Kun Wang, Jhih-Jie Huang, Miin-Jang Chen
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Publication number: 20150102431Abstract: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a nitride buffer layer over the semiconductor substrate, and the nitride buffer layer is in an amorphous state. The semiconductor device also includes a crystalline gate dielectric layer over the nitride buffer layer and a gate electrode over the crystalline gate dielectric layer.Type: ApplicationFiled: October 11, 2013Publication date: April 16, 2015Applicant: Taiwan Seminconductor Manufacturing Co., Ltd.Inventors: Liang-Chen CHI, Chia-Ming TSAI, Chin-Kun WANG, Jhih-Jie HUANG, Miin-Jang CHEN
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Patent number: 8946036Abstract: A method for forming a dielectric film is disclosed. The method includes (a) exposing a substrate to a first gas pulse having a first oxygen-containing gas in a chamber; (b) exposing the substrate to multiple consecutive second gas pulses having a second oxygen-containing gas in the chamber, wherein the first oxygen-containing gas is different from the second oxygen-containing gas; and (c) sequentially after (a) and (b), exposing the substrate to a third gas pulse having a metal-containing gas in the chamber. Steps (a), (b), and (c) may be repeated any number of times to form the dielectric film with a predetermined thickness.Type: GrantFiled: December 7, 2012Date of Patent: February 3, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Liang-Chen Chi, Chia-Ming Tsai, Yu-Min Chang, Chin-Kun Wang, Miin-Jang Cheng, Keng-Ham Lin
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Publication number: 20140162425Abstract: A method for forming a dielectric film is disclosed. The method includes (a) exposing a substrate to a first gas pulse having a first oxygen-containing gas in a chamber; (b) exposing the substrate to multiple consecutive second gas pulses having a second oxygen-containing gas in the chamber, wherein the first oxygen-containing gas is different from the second oxygen-containing gas; and (c) sequentially after (a) and (b), exposing the substrate to a third gas pulse having a metal-containing gas in the chamber. Steps (a), (b), and (c) may be repeated any number of times to form the dielectric film with a predetermined thickness.Type: ApplicationFiled: December 7, 2012Publication date: June 12, 2014Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Liang-Chen Chi, Chia-Ming Tsai, Yu-Min Chang, Chin-Kun Wang, Miin-Jang Cheng, Keng-Ham Lin
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Patent number: 8729645Abstract: Structures and methods for reducing backside polysilicon peeling are disclosed. A structure includes a substrate having a first side and a second opposite side, a first dielectric layer on the second side of the substrate extending in a direction from an edge of the substrate towards a center of the substrate, a high-k layer on the first dielectric layer, and a polysilicon layer on the high-k layer. The first dielectric layer has a first innermost sidewall relative to the center of the substrate, and the high-k layer has a second innermost sidewall relative to the center of the substrate. The second innermost sidewall is within 2 millimeters from the first innermost sidewall in a direction parallel to the second side. The polysilicon layer extends towards the center of the substrate further than the first innermost sidewall.Type: GrantFiled: December 20, 2012Date of Patent: May 20, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Liang-Chen Chi, Wei-Lun Jian, Chia-Ming Tsai, Yu-Min Chang, Chin-Kun Wang
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Publication number: 20130064973Abstract: A system and method for conditioning a chamber is disclosed. An embodiment comprises utilizing the deposition chamber to deposit a first layer and conditioning the deposition chamber. The conditioning the deposition chamber can be performed by depositing a heterogeneous material over the first layer. The heterogeneous material can cover and encapsulate the first layer, thereby preventing particles of the first layer from breaking off and potentially landing on a substrate during a subsequent processing run.Type: ApplicationFiled: September 9, 2011Publication date: March 14, 2013Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yen-Yu Chen, Chia-Ming Tsai, Liang-Chen Chi, Jian-Yuan Chen, Ke-Chih Liu