Abstract: A pulmonary function identifying and treating method includes: obtaining a first image, having first image elements, and a second image, having second image elements, respectively corresponding to a first state and a second state of a lung; extracting first feature points of the first image and second feature points of the second image; registering the first image with the second image using a boundary point set registration method and an inner tissue registration method according to the first feature points and the second feature points, so that the first image elements correspond to the second image elements and tissue units of the lung; determining functional index values representative of the tissue units of the lung using a ventilation function quantification method according to the first image elements and the second image elements corresponding to the first image elements; and treating the lung according to the functional index values.

Abstract: A semiconductor process system etches gate metals on semiconductor wafers. The semiconductor process system includes a machine learning based analysis model. The analysis model dynamically selects process conditions for an etching process. The process system then uses the selected process conditions data for the next etching process.

Abstract: A fibroblast activation protein (FAP) compound or salt is provided with albumin dual-binding function. It is a new target FAP molecule, comprising a payload group, a linker group and a FAP binding group. The linker group has an architecture selected from four architectures to connect to the payload group and the FAP binding group to form the FAP compound. The target FAP molecule has the biological activity of binding to albumin in blood and that of binding to FAP protein. The present invention is combined with radioactive nuclide Lu-177, Ac-225, Ga-67 or In-111 for long-circulation FAP targeting in the body. Higher accumulation in expressing FAP tumors is achieved, and the accumulation time of inhibitors in tumors is prolonged. The present invention allows radioactivity to act in the tumor for a long time, thereby reducing the radioactivity concentration or reducing the frequency of radioactive inhibitor administration to inhibit tumor growth.

Abstract: A magnetic traction device for impacted tooth, comprising a first magnetic component fixed to a normal tooth and a second magnetic component fixed to an impacted tooth. There is an attractive magnetic force between the first and second magnetic components, thereby pulling the impacted tooth toward the direction of the normal tooth where the first magnetic component is located.

Abstract: A gas dispenser utilized in a deposition apparatus is provided. The gas dispenser includes a showerhead comprising a plurality of holes, and a mask layer formed on a surface of the showerhead, wherein the holes penetrate through the mask layer. A deposition apparatus using the gas dispenser is also disclosed.

Abstract: A complementary metal oxide semiconductor (CMOS) device includes a transistor of a first type formed over a first substrate, and a transistor of a second type formed over a second substrate. The CMOS device is formed when the transistor of the first type formed on the first substrate is bonded to the transistor of the second type formed over the second substrate.

Abstract: A method of manufacturing a semiconductor device is provided. A substrate is provided. The substrate has a first region and a second region. An n-type work function layer is formed over the substrate in the first region but not in the second region. A p-type work function layer is formed over the n-type work function layer in the first region, and over the substrate in the second region. The p-type work function layer directly contacts the substrate in the second region. And the p-type work function layer includes a metal oxide.

Abstract: A deep trench resistor structure and methods of forming the same are described. The structure includes a first trench located in a first dielectric material, a first layer disposed over the first dielectric material, a second layer disposed on the first layer, a second dielectric material disposed over the second layer, and a tunable device in contact with the first layer. The tunable device includes a semiconductor-containing layer in contact with the first layer, a dielectric layer disposed on the semiconductor-containing layer, and a metal-containing layer disposed on the dielectric layer.

Abstract: A semiconductor process system etches gate metals on semiconductor wafers. The semiconductor process system includes a machine learning based analysis model. The analysis model dynamically selects process conditions for an atomic layer etching process. The process system then uses the selected process conditions data for the next etching process.

Abstract: The present application discloses a method for detecting cigarette appearance defects based on variational Bayesian inference. In a cigarette appearance defect detection scenario, in order to solve the problem that a current point estimation-based machine learning algorithm leads to an overconfidence decision in a data scarcity area, the present application proposes a variational inference-based Bayesian method to improve a SSD backbone network, preferably including calculating a real posterior probability by the variational inference method, replacing a point estimation mechanism of a convolution layer weight in the original backbone network by using a form of probability distribution, then detecting the improved extracted features by an SSD target detection algorithm, and furthermore, accurately determining whether the appearance of the cigarette is defective and the type and location of the defect.

Abstract: The present disclosure describes a resistor structure with a dielectric layer, trenches, a metal layer, a semiconductor layer, and an insulating layer. The dielectric layer is disposed above electrical components formed on a substrate. The trenches are disposed in the dielectric layer and separated from each other by a dielectric region of the dielectric layer. The metal layer is disposed on a bottom surface and side surfaces of each of the trenches and on a top surface of the dielectric region. The semiconductor layer is disposed on a bottom surface, side surfaces, and a top surface of the metal layer. The insulating layer is disposed in the trenches and in contact with side surfaces of the semiconductor layer and on a top surface of the semiconductor layer.

Abstract: Various embodiments of the present disclosure are directed to a vertical gate-all-around (GAA) memory cell. A middle conductor overlies a lower conductor and decreases in width towards the lower conductor to culminate in a point spaced from the lower conductor. An insulator structure is between the lower conductor and the middle conductor. A semiconductor channel overlies the middle conductor, and a gate electrode laterally surrounds the semiconductor channel on a sidewall of the semiconductor channel. A gate dielectric layer separates the gate electrode from the semiconductor channel, and an upper conductor overlies the semiconductor channel. The lower and middle conductors and the insulator structure correspond to a resistor, whereas the middle conductor, the upper conductor, the gate electrode, the gate dielectric layer, and the semiconductor channel correspond to a transistor atop the resistor.

Abstract: A ferroelectric memory cell (FeRAM) is disclosed that includes an active device (e.g., a transistor) and a passive device (e.g., a ferroelectric capacitor) integrated in a substrate. The transistor and its gate contacts are formed on a front side of the substrate. A carrier wafer can be bonded to the active device to allow the active device to be inverted so that the passive device and associated contacts can be electrically coupled from a back side of the substrate.

Abstract: An electronic device is provided. The electronic device is adapted to be disposed on a mounting surface. The electronic device includes a device body, a connection base and a bracket. The connection base is connected to the device body. The connection base is adapted to be rotated between a first orientation and a second orientation relative to the device body. When the connection base is in the first orientation, the connection base is connected to the device body. When the connection base is in the second orientation, the connection base is separated from the device body. The bracket is wedged against the connection base, wherein the bracket is adapted to be affixed to the mounting surface.

Abstract: A bone fixation assembly includes a bone plate, a first bone screw and a second bone screw. The first and second bone screws penetrate through two holes respectively. The first bone screw has a left-handed thread while the second bone screw has a right-handed thread. With different thread directions of the bone screws, the bone screws are hard to be loosened so that broken bones are fixed firmly. Accordingly, size of the bone plate is able to be reduced for miniaturization.

Abstract: A maxilla holder includes a base plate and a connecting member. One end of the connecting member is connected with the base plate which extends along a pre-designed occlusal plane while the other end of the connecting member includes at least two supporting portions. With the supporting portions abutting against the cranium, the base plate is positioned so that the maxilla is located in a pre-planned position once it is moved onto the base plate.

Abstract: An electrode controls transmittance of a blocking layer over a photodiode of a pixel sensor (e.g., a photodiode of a small pixel detector) by changing oxidation of a metal material included in the blocking layer. By using the electrode to adjust transmittance of the blocking layer, pixel sensors for different uses and/or products may be produced using a single manufacturing process. As a result, power and processing resources are conserved that otherwise would have been expended in switching manufacturing processes. Additionally, production time is decreased (e.g., by eliminating downtime that would otherwise have been used to reconfigure fabrication machines.

Abstract: A dental instrument includes a handle and an extension portion, the extension portion has a frontal protrusion that is used to hang an elastic traction ligature. An impacted tooth traction device includes a first bracket for being fastened to an impacted tooth, and a second bracket for being fastened to an anchor body, and the aforementioned elastic traction ligature that is used to connect the first bracket with the second bracket. A method for installing the impacted tooth traction device includes: fastening the first bracket to the impacted tooth, fastening the second bracket to the anchor body, and to connect the elastic traction ligature to the first and the second brackets after the elastic traction ligature is pulled to a certain length.

Abstract: A client determines that a user is attempting to access media program recommendations. In response to the determination, the client attempts to collect media program recommendations to be presented to the user. Media program recommendations may be derived locally by the client, by the client and a multimedia device locally connected with the client, by the client and one or more additional devices, etc. In some embodiments, in response to receiving a query from the client, one or more recipient devices or servers identify media program recommendations in a plurality of trending categories. The media program recommendations may be selected based at least in part on EPG data and audience research and measurement data. The media program recommendations collected by the client are presented to the user for further exploration. The client may be one of mobile phones, tablet computers, etc.

Abstract: A semiconductor device includes a first transistor formed on a first side of a substrate. The semiconductor device includes a first power rail structure vertically disposed over the first transistor, a second power rail structure vertically disposed over the first power rail structure, and a memory portion vertically disposed over the second power rail structure. The first power rail structure, and a second power rail structure, and the memory portion are all disposed on a second side of the substrate opposite to the first side.