Abstract: Disclosed is a thermal conduction-electrical conduction isolated circuit board with a ceramic substrate and a power transistor embedded, mainly comprising: a dielectric material layer, a heat-dissipating ceramic block, a securing portion, a stepped metal electrode layer, a power transistor, and a dielectric material packaging, wherein a via hole is formed in the dielectric material layer, the heat-dissipating ceramic block is correspondingly embedded in the via hole, the heat-dissipating ceramic block has a thermal conductivity higher than that of the dielectric material layer and a thickness less than that of the dielectric material layer, the stepped metal electrode layer conducts electricity and heat for the power transistor, the dielectric material packaging is configured to partially expose the source connecting pin, drain connecting pin, and gate connecting pin of the encapsulated stepped metal electrode layer.

Abstract: Provided is a peptide and method in preventing or treating infections caused by a wide spectrum of pathogens, including bacteria and fungus in hosts such as plants and animals. Methods of preventing or treating plant diseases and infection in animals are also provided.

Abstract: A method of correcting a misalignment of a wafer on a wafer holder and an apparatus for performing the same are disclosed. In an embodiment, a semiconductor alignment apparatus includes a wafer stage; a wafer holder over the wafer stage; a first position detector configured to detect an alignment of a wafer over the wafer holder in a first direction; a second position detector configured to detect an alignment of the wafer over the wafer holder in a second direction; and a rotational detector configured to detect a rotational alignment of the wafer over the wafer holder.

Abstract: A method of exposing a wafer to a high-tilt angle ion beam and an apparatus for performing the same are disclosed. In an embodiment, a method includes forming a patterned mask layer over a wafer, the patterned mask layer including a patterned mask feature; exposing the wafer to an ion beam, a surface of the wafer being tilted at a tilt angle with respect to the ion beam; and moving the wafer along a scan line with respect to the ion beam, a scan angle being defined between the scan line and an axis perpendicular to an axis of the ion beam, a difference between the tilt angle and the scan angle being less than 50°.

Abstract: A pulmonary function identifying method includes: obtaining a first image, having first image elements, and a second image, having second image elements, respectively corresponding to a first state and a second state of a lung; extracting first feature points of the first image and second feature points of the second image; registering the first image with the second image using a boundary point set registeration method and an inner tissue registeration method according to the first feature points and the second feature points, so that the first image elements correspond to the second image elements and tissue units of the lung; and determining functional index values representative of the tissue units of the lung using a ventilation function quantification method according to the first image elements and the second image elements corresponding to the first image elements.

Abstract: High-efficiency control technology for non-volatile memory. A non-volatile memory has single level cells (SLCs) and multiple level cells (e.g., MLCs or TLCs) and is controlled by a controller. According to the controller at the device end, a host allocates a system memory to provide a host memory buffer (HMB). The controller at the device end uses the HMB to buffer write data issued by the host, and then flushes the write data from the HMB to multi-level cells of the non-volatile memory without passing single level cells of the non-volatile memory to reduce write amplification problems due to the frequent use of the single-level cells.

Abstract: Multi-channel accessing of non-volatile memory. A controller uses three kinds of tables to manage cross-channel accessing areas and, accordingly, to access the non-volatile memory through multiple channels. Each cross-channel accessing area includes M storage units, where M is an integer greater than 1. For each cross-channel accessing area, the first table marks whether there is a need for storage unit substitution and points to substitution information. The substitution information is stored in the second table and the third table. For each cross-channel accessing area marked in the first table, the second table stores M bits corresponding to M storage units of the marked cross-channel accessing area for substitution indication, and related substitute storage unit indication is stored in the third table.

Abstract: High-efficiency control technology for non-volatile memory. A non-volatile memory has single level cells (SLCs) and multiple level cells (e.g., MLCs or TLCs) and is controlled by a controller. According to the controller at the device end, a host allocates a system memory to provide a host memory buffer (HMB). The controller at the device end uses the HMB to buffer write data issued by the host, and then flushes the write data from the HMB to multi-level cells of the non-volatile memory without passing single level cells of the non-volatile memory to reduce write amplification problems due to the frequent use of the single-level cells.

Abstract: Multi-channel accessing of non-volatile memory. A controller uses three kinds of tables to manage cross-channel accessing areas and, accordingly, to access the non-volatile memory through multiple channels. Each cross-channel accessing area includes M storage units, where M is an integer greater than 1. For each cross-channel accessing area, the first table marks whether there is a need for storage unit substitution and points to substitution information. The substitution information is stored in the second table and the third table. For each cross-channel accessing area marked in the first table, the second table stores M bits corresponding to M storage units of the marked cross-channel accessing area for substitution indication, and related substitute storage unit indication is stored in the third table.

Abstract: The present invention relates to a method for preparing 186/188Re-labeled human serum albumin (HSA) microspheres by 186/188Re(I)-tricarbonyl ion. This radioactive particle can be subjected to radioembolization for liver tumor. In this method, 186/188Re(I)-tricarbonyl ion (186/188Re(OH2)3(CO)3)+) are employed as a precursor for directly labeling HSA microspheres with 186/188Re at appropriate temperature.

Abstract: The present invention relates to a method for preparing 186/188Re-labeled human serum albumin (HSA) microspheres by 186/188Re(I)-tricarbonyl ion. This radioactive particle can be subjected to radioembolization for liver tumor. In this method, 186/188Re(I)-tricarbonyl ion (186/188Re(OH2)3(CO)3)+) are employed as a precursor for directly labeling HSA microspheres with 186/188Re at appropriate temperature.

Abstract: This invention is to manufacture a kit for preparation of nano-targeted liposome drugs in combined chemotherapy and radionuclide therapy. It is a kit consisting of three components: (1) A 10 ml vial A which contains BMEDA, gluconate acetate, SnCl2. (2) A 10 ml vial B which contains DSPC, cholesterol, DSPE-PEG, and Doxorubicin(DXR) (or Daunorubicin, Vinolbine). (3) A 10 ml vial C which contains 188ReO4? (or 186ReO4?) solution. The procedure of using the kit is as follows: (1) Remove the contents of the 188ReO4? (or 186ReO4?) solution from vial C. (2) Inject the 188ReO4? (or 186ReO4?) solution into the vial A, and the mixtures react in appropriate temperature. (3) Remove the contents of the 188Re-BMEDA (or 186Re-BMEDA) solution from vial A. (4) Inject the 188Re-BMEDA (or 186Re-BMEDA) solution into the vial B, and the mixtures react in appropriate temperature. The reconstituted solution in the vial B is applied to combine bimodality radiochemotherapy for treatment of tumor and ascites.