Patents by Inventor Liang-Chieh Ma
Liang-Chieh Ma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20200393456Abstract: In one aspect, molecular sensors and methods of making molecular sensors are described herein. In some embodiments, such a sensor comprises a first layer having a dual nanohole structure and a second layer having at least one nanopore. In some embodiments, the first and second layer define a chip of the sensor. In another aspect, methods of sensing are described herein, which in some embodiments comprise (i) providing a test sample comprising complexed and/or non-complexed biomolecules; (ii) contacting the test sample with the first layer of the molecular sensor; (iii) irradiating the dual nanohole structure of the sensor with a beam of electromagnetic radiation; (iv) optically trapping the biomolecules in the dual nanohole structure and measuring a surface plasmon resonance; (v) applying an electric field across the nanopore of the sensor; and (vi) measuring change in current across the nanopore during one or more translocation events of the biomolecules.Type: ApplicationFiled: December 11, 2018Publication date: December 17, 2020Inventors: Georgios ALEXANDRAKIS, Samir M. IQBAL, Saiful CHOWDHURY, Jon WEIDANZ, Muhammad Usman RAZA, Liang-Chieh MA
-
Patent number: 10825920Abstract: Energy-filtered cold electron devices use electron energy littering through discrete energy levels of quantum wells or quantum dots that are formed through band bending of tunneling barrier conduction band. These devices can obtain low effective electron temperatures of less than or equal to 45K at room temperature, steep electrical current turn-on/turn-off capabilities with a steepness of less than or equal to 10 mV/decade at room temperature, subthreshold swings of less than or equal to 10 mV/decade at room temperature, and/or supply voltages of less than or equal to 0.1 V.Type: GrantFiled: November 26, 2019Date of Patent: November 3, 2020Assignee: Board of Regents, The University of Texas SystemInventors: Seong Jin Koh, Pradeep Bhadrachalam, Liang-Chieh Ma
-
Publication number: 20200098899Abstract: Energy-filtered cold electron devices use electron energy littering through discrete energy levels of quantum wells or quantum dots that are formed through band bending of tunneling barrier conduction band. These devices can obtain low effective electron temperatures of less than or equal to 45K at room temperature, steep electrical current turn-on/turn-off capabilities with a steepness of less than or equal to 10 mV/decade at room temperature, subthreshold swings of less than or equal to 10 mV/decade at room temperature, and/or supply voltages of less than or equal to 0.1 V.Type: ApplicationFiled: November 26, 2019Publication date: March 26, 2020Inventors: Seong Jin KOH, Pradeep BHADRACHALAM, Liang-Chieh MA
-
Patent number: 10529835Abstract: Energy-filtered cold electron devices use electron energy filtering through discrete energy levels of quantum wells or quantum dots that are formed through band bending of tunneling barrier conduction band. These devices can obtain low effective electron temperatures of less than or equal to 45K at room temperature, steep electrical current turn-on/turn-off capabilities with a steepness of less than or equal to 10 mV/decade at room temperature, subthreshold swings of less than or equal to 10 mV/decade at room temperature, and/or supply voltages of less than or equal to 0.1 V.Type: GrantFiled: March 15, 2019Date of Patent: January 7, 2020Inventors: Seong Jin Koh, Pradeep Bhadrachalam, Liang-Chieh Ma
-
Publication number: 20190214488Abstract: Energy-filtered cold electron devices use electron energy filtering through discrete energy levels of quantum wells or quantum dots that are formed through band bending of tunneling barrier conduction band. These devices can obtain low effective electron temperatures of less than or equal to 45K at room temperature, steep electrical current turn-on/turn-off capabilities with a steepness of less than or equal to 10 mV/decade at room temperature, subthreshold swings of less than or equal to 10 mV/decade at room temperature, and/or supply voltages of less than or equal to 0.1 V.Type: ApplicationFiled: March 15, 2019Publication date: July 11, 2019Inventors: Seong Jin KOH, Pradeep BHADRACHALAM, Liang-Chieh MA
-
Patent number: 10276699Abstract: Energy-filtered cold electron devices use electron energy filtering through discrete energy levels of quantum wells or quantum dots that are formed through band bending of tunneling barrier conduction band. These devices can obtain low effective electron temperatures of less than or equal to 45K at room temperature, steep electrical current turn-on/turn-off capabilities with a steepness of less than or equal to 10 mV/decade at room temperature, subthreshold swings of less than or equal to 10 mV/decade at room temperature, and/or supply voltages of less than or equal to 0.1 V.Type: GrantFiled: June 27, 2018Date of Patent: April 30, 2019Assignee: Board of Regents, The University of Texas SystemInventors: Seong Jin Koh, Pradeep Bhadrachalam, Liang-Chieh Ma
-
Publication number: 20180323290Abstract: Energy-filtered cold electron devices use electron energy filtering through discrete energy levels of quantum wells or quantum dots that are formed through band bending of tunneling barrier conduction band. These devices can obtain low effective electron temperatures of less than or equal to 45K at room temperature, steep electrical current turn-on/turn-off capabilities with a steepness of less than or equal to 10 mV/decade at room temperature, subthreshold swings of less than or equal to 10 mV/decade at room temperature, and/or supply voltages of less than or equal to 0.1 V.Type: ApplicationFiled: June 27, 2018Publication date: November 8, 2018Inventors: Seong Jin KOH, Pradeep BHADRACHALAM, Liang-Chieh MA
-
Patent number: 10038084Abstract: Energy-filtered cold electron devices use electron energy filtering through discrete energy levels of quantum wells or quantum dots that are formed through band bending of tunneling barrier conduction band. These devices can obtain low effective electron temperatures of less than or equal to 45K at room temperature, steep electrical current turn-on/turn-off capabilities with a steepness of less than or equal to 10 mV/decade at room temperature, subthreshold swings of less than or equal to 10 mV/decade at room temperature, and/or supply voltages of less than or equal to 0.1 V.Type: GrantFiled: June 7, 2017Date of Patent: July 31, 2018Assignee: Board of Regents, The University of Texas SystemInventors: Seong Jin Koh, Pradeep Bhadrachalam, Liang-Chieh Ma
-
Publication number: 20170338331Abstract: Energy-filtered cold electron devices use electron energy filtering through discrete energy levels of quantum wells or quantum dots that are formed through band bending of tunneling barrier conduction band. These devices can obtain low effective electron temperatures of less than or equal to 45K at room temperature, steep electrical current turn-on/turn-off capabilities with a steepness of less than or equal to 10 mV/decade at room temperature, subthreshold swings of less than or equal to 10 mV/decade at room temperature, and/or supply voltages of less than or equal to 0.1 V.Type: ApplicationFiled: June 7, 2017Publication date: November 23, 2017Inventors: Seong Jin KOH, Pradeep BHADRACHALAM, Liang-Chieh MA
-
Patent number: 9704977Abstract: Energy-filtered cold electron devices use electron energy filtering through discrete energy levels of quantum wells or quantum dots that are formed through band bending of tunneling barrier conduction band. These devices can obtain low effective electron temperatures of less than or equal to 45K at room temperature, steep electrical current turn-on/turn-off capabilities with a steepness of less than or equal to 10 mV/decade at room temperature, subthreshold swings of less than or equal to 10 mV/decade at room temperature, and/or supply voltages of less than or equal to 0.1 V.Type: GrantFiled: February 3, 2015Date of Patent: July 11, 2017Assignee: BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEMInventors: Seong Jin Koh, Pradeep Bhadrachalam, Liang-Chieh Ma
-
Publication number: 20170012115Abstract: Energy-filtered cold electron devices use electron energy filtering through discrete energy levels of quantum wells or quantum dots that are formed through band bending of tunneling barrier conduction band. These devices can obtain low effective electron temperatures of less than or equal to 45K at room temperature, steep electrical current turn-on/turn-off capabilities with a steepness of less than or equal to 10 mV/decade at room temperature, subthreshold swings of less than or equal to 10 mV/decade at room temperature, and/or supply voltages of less than or equal to 0.1 V.Type: ApplicationFiled: February 3, 2015Publication date: January 12, 2017Inventors: Seong Jin KOH, Pradeep BHADRACHALAM, Liang-Chieh MA
-
Patent number: 7465953Abstract: The present invention includes single electron structures and devices comprising a substrate having an upper surface, one or more dielectric layers formed on the upper surface of the substrate and having at least one exposed portion, at least one monolayer of self-assembling molecules attracted to and in contact with the at least one exposed portion of only one of the one or more dielectric layers, one or more nanoparticles attracted to and in contact with the at least one monolayer, and at least one tunneling barrier in contact with the one or more nanoparticles. Typically, the single electron structure or device formed therefrom further comprise a drain, a gate and a source to provide single electron behavior, wherein there is a defined gap between source and drain and the one or more nanoparticles is positioned between the source and drain.Type: GrantFiled: April 27, 2006Date of Patent: December 16, 2008Assignee: Board of Regents, The University of Texas SystemInventors: Seong Jin Koh, Choong-Un Kim, Liang-Chieh Ma, Ramkumar Subramanian