Abstract: A button module is provided. The button module comprises a base, a pressing part, and an elastic part. The pressing part includes a fixed end and a free end. The fixed end is pivotally connected to the base in a first axial direction. The elastic part is disposed on a side of the pressing part facing the base. The elastic part includes a first damping portion and a second damping portion selectively pressing against the base, where a hardness of the first damping portion is different from a hardness of the second damping portion.

Abstract: A common mode filter includes at least two inductance unit sets. Each inductance unit set includes a coil leading layer, an insulating substrate, at least two electrically conductive columns, and a coil main body layer. The coil leading layer is disposed on a first surface of the substrate, and includes at least two leading wires, at least four leading terminals, and at least two contacts. Each leading wire respectively connects one leading terminal and one contact. The coil main body layer is disposed on a second surface of the substrate, and includes a coil lead and two end portions thereof. Each electrically conductive column extends through the substrate, connecting one contact and one end portion. The two substrates and two coil main body layers of the at least two inductance unit sets are bonded by an electrically insulating layer. The two coil main body layers are electrically isolated from each other by the electrically insulating layer.

Abstract: A manufacturing method of a single chip semiconductor coating structure includes following steps. Step 1 is providing a single chip semiconductor which has a plurality of surfaces, and two opposite surfaces selected from the plurality of surfaces are manufacturing surfaces and have a conductive area with a pad thereon, respectively. Step 2 is providing a tool to cover one of the conductive areas with the pad. Step 3 is providing a coating step to form an insulating layer on the single chip semiconductor. Step 4 is providing a removing step to remove the insulating layer for exposing the covered conductive area and the pad. Step 5 is forming two electrodes and each of the two electrodes covers the conductive area with the pad.

Abstract: A common mode filter includes at least two inductance unit sets. Each inductance unit set includes a coil leading layer, an insulating substrate, at least two electrically conductive columns, and a coil main body layer. The coil leading layer is disposed on a first surface of the substrate, and includes at least two leading wires, at least four leading terminals, and at least two contacts. Each leading wire respectively connects one leading terminal and one contact. The coil main body layer is disposed on a second surface of the substrate, and includes a coil lead and two end portions thereof. Each electrically conductive column extends through the substrate, connecting one contact and one end portion. The two substrates and two coil main body layers of the at least two inductance unit sets are bonded by an electrically insulating layer. The two coil main body layers are electrically isolated from each other by the electrically insulating layer.

Abstract: A manufacturing method of a single chip semiconductor coating structure includes following steps. Step 1 is providing a single chip semiconductor which has a plurality of surfaces, and two opposite surfaces selected from the plurality of surfaces are manufacturing surfaces and have a conductive area with a pad thereon, respectively. Step 2 is providing a tool to cover one of the conductive areas with the pad. Step 3 is providing a coating step to form an insulating layer on the single chip semiconductor. Step 4 is providing a removing step to remove the insulating layer for exposing the covered conductive area and the pad. Step 5 is forming two electrodes and each of the two electrodes covers the conductive area with the pad.

Abstract: A manufacturing method of a single chip semiconductor coating structure includes following steps. Step 1 is providing a single chip semiconductor which has a plurality of surfaces, and two opposite surfaces selected from the plurality of surfaces are manufacturing surfaces and have a conductive area with a pad thereon, respectively. Step 2 is providing a tool to cover one of the conductive areas with the pad. Step 3 is providing a coating step to form an insulating layer on the single chip semiconductor. Step 4 is providing a removing step to remove the insulating layer for exposing the covered conductive area and the pad. Step 5 is forming two electrodes and each of the two electrodes covers the conductive area with the pad.

Abstract: A chip-scale semiconductor device package includes a die, an insulating substrate having a through hole, a first metal layer, a second metal layer, and an insulating layer. The first metal layer is on a first surface of the insulating substrate and a first side of the through hole. The insulating layer is overlaid on a second surface of the insulating substrate and surrounds a second side of the through hole. The second metal is on the insulating layer and the second side of the through hole. The die is in the through hole and includes a first electrode and a second electrode. The first electrode is electrically connected to the first metal layer, and the second electrode is electrically connected to the second metal layer.

Abstract: An insulation covering structure for a semiconductor element with a single die dimension includes: a semiconductor element with a single die dimension and an insulation covering layer. The semiconductor element has a front side surface, a rear side surface, a left side surface, a right side surface, a bottom surface, and a top surface. The top surface of the semiconductor element has two metal pads. The insulation covering layer covers the front side surface, the rear side surface, the left side surface, the right side surface, and the bottom surface of the semiconductor element. A manufacturing process for covering the semiconductor element with a single die dimension is also disclosed.

Abstract: A common mode filter comprises an insulating substrate, a lower coil leading layer, a coil main body multilayer, and an upper coil leading layer. The upper coil leading layer comprises at least one upper lead, at least one upper terminal, and at least one upper contact, and the lower coil leading layer comprises at least one lower lead, at least one lower terminal, and at least one lower contact. The two ends of the upper lead are respectively connected to the upper terminal and the upper contact, and the upper lead surrounds the upper contact. The two ends of the lower lead are respectively connected to the lower terminal and the lower contact, and the lower lead surrounds the lower contact. The upper coil leading layer and the lower coil leading layer sandwich the coil main body multi-layer, and the lower coil leading layer is disposed on the insulating substrate.

Abstract: An insulation covering structure for a semiconductor element with a single die dimension includes: a semiconductor element with a single die dimension and an insulation covering layer. The semiconductor element has a front side surface, a rear side surface, a left side surface, a right side surface, a bottom surface, and a top surface. The top surface of the semiconductor element has two metal pads. The insulation covering layer covers the front side surface, the rear side surface, the left side surface, the right side surface, and the bottom surface of the semiconductor element. A manufacturing process for covering the semiconductor element with a single die dimension is also disclosed.