Abstract: The present invention discloses a process for forming a solution containing gold nanoclusters binding with ligands, the process comprises the following steps: provide a aqueous solution that comprises a gold precursor, a base and ligands; perform a reduction reaction by adding a reductant into the aqueous solution to form a liquid containing gold nanoclusters binding with the ligands; concentrate the liquid containing the gold nanoclusters binding with the ligands to a solid; dissolve the solid into water to form a crude solution; and perform a purification process by passing the crude solution through a membrane or a dialysis tube to obtain the solution containing the gold nanoclusters binding with the ligands.

Abstract: A method of metallization using a tungsten plug is described. A contact hole is opened to the semiconductor substrate through an insulating layer covering semiconductor structures in and on the semiconductor substrate. A glue layer is deposited conformally over the surface of the insulating layer and within the contact opening. A tungsten plug is formed within the contact opening. The glue layer is removed except for portions of the glue layer underneath the tungsten plug and on the lower sides of the tungsten plug. Ditches are left on the upper sides of the tungsten plug where the glue layer has been removed. The ditches around the tungsten plug are filled with a dielectric material. A second metallization is deposited and patterned. The patterned second metallization does not extend over one side portion of the tungsten plug; that is, there is no dog-bone formation.