Abstract: A method includes forming bottom conductive lines extending along a first direction; forming a first memory cell over one of the bottom conductive lines and a second memory cell over another one of the bottom conductive lines; forming a third memory cell over the one of the bottom conductive lines and a fourth memory cell over the another one of the bottom conductive lines, wherein the third memory cell and the fourth memory cell are at a higher level than the first memory cell and the second memory cell; and forming top conductive lines above the bottom conductive lines, wherein one of the top conductive line vertically overlaps the first and third memory cells, and another one of the top conductive line vertically overlaps the second and fourth memory cells.

Abstract: Test pad structures and methods of forming a test pad are described herein. A method for forming a test pad includes forming a device element over a substrate, depositing a dielectric layer over the device element and the substrate, and etching openings in the dielectric layer to a first depth. Once the openings have been formed, a conductive material is deposited in the openings and followed by a chemical mechanical planarization to form a first grid feature and a panel region of the test pad, the first grid feature extending lengthwise from the panel region to a perimeter of the test pad. Once formed, a probe may be used to contact the panel region of the test pad during a wafer acceptance test (WAT) and/or a process control monitoring (PCM) test of the device element.

Abstract: A method includes forming bottom conductive lines over a wafer. A first magnetic tunnel junction (MTJ) stack is formed over the bottom conductive lines. Middle conductive lines are formed over the first MTJ stack. A second MTJ stack is formed over the middle conductive lines. Top conductive lines are formed over the second MTJ stack.

Abstract: Test pad structures and methods of forming a test pad are described herein. A method for forming a test pad includes forming a device element over a substrate, depositing a dielectric layer over the device element and the substrate, and etching openings in the dielectric layer to a first depth. Once the openings have been formed, a conductive material is deposited in the openings and followed by a chemical mechanical planarization to form a first grid feature and a panel region of the test pad, the first grid feature extending lengthwise from the panel region to a perimeter of the test pad. Once formed, a probe may be used to contact the panel region of the test pad during a wafer acceptance test (WAT) and/or a process control monitoring (PCM) test of the device element.

Abstract: The present disclosure describes an interconnect structure and a method forming the same. The interconnect structure can include a substrate, a layer of conductive material over the substrate, a metallic capping layer over the layer of conductive material, a layer of insulating material over top and side surfaces of the metallic capping layer, and a layer of trench conductor formed in the layer of insulating material and the metallic capping layer.

Abstract: The present disclosure describes an interconnect structure and a method forming the same. The interconnect structure can include a substrate, a layer of conductive material over the substrate, a metallic capping layer over the layer of conductive material, a layer of insulating material over top and side surfaces of the metallic capping layer, and a layer of trench conductor formed in the layer of insulating material and the metallic capping layer.

Abstract: A method includes forming a memory stack over a substrate. A dielectric layer is deposited to cover the memory stack. An opening is formed in the dielectric layer. The opening does not expose the memory stack. A spin-orbit-torque (SOT) layer is formed in the opening. A free layer is formed over the dielectric layer to interconnect the memory stack and the SOT layer.

Abstract: A method includes forming a memory stack over a substrate. A dielectric layer is deposited to cover the memory stack. An opening is formed in the dielectric layer. The opening does not expose the memory stack. A spin-orbit-torque (SOT) layer is formed in the opening. A free layer is formed over the dielectric layer to interconnect the memory stack and the SOT layer.

Abstract: A method includes forming bottom conductive lines over a wafer. A first magnetic tunnel junction (MTJ) stack is formed over the bottom conductive lines. Middle conductive lines are formed over the first MTJ stack. A second MTJ stack is formed over the middle conductive lines. Top conductive lines are formed over the second MTJ stack.

Abstract: A magnetoresistive memory device includes a memory stack, a spin-orbit-torque (SOT) layer, and a free layer. The memory stack includes a pinned layer, a spacer layer over the pinned layer, a reference layer over the spacer layer, and a tunnel barrier layer over the reference layer. The SOT layer has a top surface substantially coplanar with a top surface of the tunnel barrier layer of the memory stack. The free layer interconnects the SOT layer and the tunnel barrier layer.

Abstract: A method includes forming bottom conductive lines over a wafer. A first magnetic tunnel junction (MTJ) stack is formed over the bottom conductive lines. Middle conductive lines are formed over the first MTJ stack. A second MTJ stack is formed over the middle conductive lines. Top conductive lines are formed over the second MTJ stack.

Abstract: The present disclosure describes an interconnect structure and a method forming the same. The interconnect structure can include a substrate, a layer of conductive material over the substrate, a metallic capping layer over the layer of conductive material, a layer of insulating material over top and side surfaces of the metallic capping layer, and a layer of trench conductor formed in the layer of insulating material and the metallic capping layer.

Abstract: A method includes forming bottom conductive lines over a wafer. A first magnetic tunnel junction (MTJ) stack is formed over the bottom conductive lines. Middle conductive lines are formed over the first MTJ stack. A second MTJ stack is formed over the middle conductive lines. Top conductive lines are formed over the second MTJ stack.

Abstract: Test pad structures and methods of forming a test pad are described herein. A method for forming a test pad includes forming a device element over a substrate, depositing a dielectric layer over the device element and the substrate, and etching openings in the dielectric layer to a first depth. Once the openings have been formed, a conductive material is deposited in the openings and followed by a chemical mechanical planarization to form a first grid feature and a panel region of the test pad, the first grid feature extending lengthwise from the panel region to a perimeter of the test pad. Once formed, a probe may be used to contact the panel region of the test pad during a wafer acceptance test (WAT) and/or a process control monitoring (PCM) test of the device element.

Abstract: The present disclosure describes an interconnect structure and a method forming the same. The interconnect structure can include a substrate, a layer of conductive material over the substrate, a metallic capping layer over the layer of conductive material, a layer of insulating material over top and side surfaces of the metallic capping layer, and a layer of trench conductor formed in the layer of insulating material and the metallic capping layer.

Abstract: Test pad structures and methods of forming a test pad are described herein. A method for forming a test pad includes forming a device element over a substrate, depositing a dielectric layer over the device element and the substrate, and etching openings in the dielectric layer to a first depth. Once the openings have been formed, a conductive material is deposited in the openings and followed by a chemical mechanical planarization to form a first grid feature and a panel region of the test pad, the first grid feature extending lengthwise from the panel region to a perimeter of the test pad. Once formed, a probe may be used to contact the panel region of the test pad during a wafer acceptance test (WAT) and/or a process control monitoring (PCM) test of the device element.

Abstract: A magnetoresistive memory device includes a plurality of bottom conductive lines, a plurality of top conductive lines, a first memory cell, and a second memory cell. The top conductive lines are over the bottom conductive lines. The first memory cell is between the bottom conductive lines and the top conductive lines and includes a first magnetic tunnel junction (MTJ) stack. The second memory cell is adjacent the first memory cell and between the bottom conductive lines and the top conductive lines. The second memory cell includes a second MTJ stack, and a top surface of the second MTJ stack is higher than a top surface of the first MTJ stack.

Abstract: A magnetoresistive memory device includes a memory stack, a spin-orbit-torque (SOT) layer, and a free layer. The memory stack includes a pinned layer, a spacer layer over the pinned layer, a reference layer over the spacer layer, and a tunnel barrier layer over the reference layer. The SOT layer has a top surface substantially coplanar with a top surface of the tunnel barrier layer of the memory stack. The free layer interconnects the SOT layer and the tunnel barrier layer.

Abstract: Test pad structures and methods of forming a test pad are described herein. A method for forming a test pad includes forming a device element over a substrate, depositing a dielectric layer over the device element and the substrate, and etching openings in the dielectric layer to a first depth. Once the openings have been formed, a conductive material is deposited in the openings and followed by a chemical mechanical planarization to form a first grid feature and a panel region of the test pad, the first grid feature extending lengthwise from the panel region to a perimeter of the test pad. Once formed, a probe may be used to contact the panel region of the test pad during a wafer acceptance test (WAT) and/or a process control monitoring (PCM) test of the device element.

Abstract: A magnetoresistive memory device includes a memory stack, a spin-orbit-torque (SOT) layer, and a free layer. The memory stack includes a pinned layer and a reference layer over the pinned layer. The SOT layer is spaced apart from the memory stack. The free layer is over the memory stack and the SOT layer.