Abstract: Disclosed herein are methods for novel cleaning processes for inline quality monitoring short-loop semiconductor wafers. In one embodiment, an exemplary process may comprise immersing the short-loop wafer in an SC-2 aqueous solution comprising hydrochloric acid and hydrogen peroxide at a temperature of about 60° C., and for a time period of about 600 seconds, and then rinsing the wafer with deionized water to remove residual SC-2 solution immediately following immersing the wafer in the SC-2 solution. This exemplary method may then comprise immersing the short-loop wafer in an SC-1 aqueous solution comprising ammonia and hydrogen peroxide immediately after rinsing the wafer to remove residual SC-2 solution, and then rinsing the wafer with deionized water to remove residual SC-1 solution immediately following immersing the wafer in the SC-1 solution.