Patents by Inventor Liang-Gi Yo

Liang-Gi Yo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • System and method for integration of HfOand RTCVD poly-silicon
    Patent number: 7037816
    Abstract: A method for fabricating a portion of an integrated circuit on a semiconductor substrate. The method includes cleaning the surface of the substrate, and forming a thin insulate over the substrate. The method also includes depositing a high dielectric constant (high-k) material over the thin insulate, and then performing a hydrogen-based anneal on the high-k material. The method further includes performing an oxygen-based anneal on the high-k material, wherein the hydrogen-based and oxygen-based anneals occur sequentially.
    Type: Grant
    Filed: January 23, 2004
    Date of Patent: May 2, 2006
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu Min Lin, Ming-Fang Wang, Kun-Chih Lee, Ming-Ho Yang, Liang-Gi Yo, Shih-Chang Chen, Karen L. Mai
  • System and method for integration of HfO2 and RTCVD poly-silicon
    Publication number: 20050164445
    Abstract: A method for fabricating a portion of an integrated circuit on a semiconductor substrate. The method includes cleaning the surface of the substrate, and forming a thin insulate over the substrate. The method also includes depositing a high dielectric constant (high-k) material over the thin insulate, and then performing a hydrogen-based anneal on the high-k material. The method further includes performing an oxygen-based anneal on the high-k material, wherein the hydrogen-based and oxygen-based anneals occur sequentially.
    Type: Application
    Filed: January 23, 2004
    Publication date: July 28, 2005
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu Lin, Ming-Fang Wang, Kun-Chih Lee, Ming-Ho Yang, Liang-Gi Yo, Shih-Chang Chen, Karen Mai