Abstract: A method for manufacturing a semiconductor structure is provided. A first plate, a second plate, and a third plate are sequentially formed over a substrate. The first plate includes a first top surface, first sidewalls and first transition regions, wherein the first transition regions connect the first sidewalls to the first top surface. The second plate includes a second top surface, second sidewalls and second transition regions, wherein the second transition regions connect the second sidewalls to the second top surface, and the first transition regions are covered by the second plate. The third plate includes a third top surface, third sidewalls and third transition regions, wherein the third transition regions connect the third sidewalls to the third top surface, and the second transition regions are exposed by the third plate. A semiconductor structure thereof is also provided.

Abstract: Some embodiments relate to an integrated chip including a first metal insulator metal (MIM) capacitor disposed over a substrate. The integrated chip further includes a second MIM capacitor disposed over the substrate. The first MIM capacitor has a first outer sidewall facing a second outer sidewall of the second MIM capacitor. A dielectric structure is arranged over and laterally between the first MIM capacitor and the second MIM capacitor. A base conductive layer is arranged between the first MIM capacitor and the second MIM capacitor and has a substantially flat upper surface. A metal core arranged on the substantially flat upper surface of the base conductive layer.

Abstract: In an RF transceiver front-end device that operates in a receiving mode, a first transformer circuit generates, based on an external RF signal received by an antenna, a first induction signal that passes through a switch unit, and that is amplified by a low noise amplifier circuit and then demodulated by a demodulation circuit to thereby generate a reception signal. When the RF transceiver front-end device is in a transmitting mode, a power amplifier circuit generates, based on a modulated signal generated by a modulation circuit through modulation of an external transmission signal, an amplified output. A second transformer circuit then generates, based on the amplified output, a second induction signal that is thus radiated by the antenna.

Abstract: In an RF transceiver front-end device that operates in a receiving mode, a first transformer circuit generates, based on an external RF signal received by an antenna, a first induction signal that passes through a switch unit, and that is amplified by a low noise amplifier circuit and then demodulated by a demodulation circuit to thereby generate a reception signal. When the RF transceiver front-end device is in a transmitting mode, a power amplifier circuit generates, based on a modulated signal generated by a modulation circuit through modulation of an external transmission signal, an amplified output. A second transformer circuit then generates, based on the amplified output, a second induction signal that is thus radiated by the antenna.

Abstract: A non-invasive array-based hemodynamic monitoring system on chip is disclosed. The non-invasive array-based hemodynamic monitoring system on chip comprises a CMOS MEMS pressure sensor array, a readout circuit, and a signal control system. The CMOS MEMS pressure sensor array is configured to sense a pulse wave of a blood vessel. The readout circuit is coupled with each of the CMOS compatible MEMS pressure sensors and is configured to read the pulse wave and transformed the pulse wave into a voltage signal. The signal control system is coupled with each of the readout circuit, and is configured to estimate a wave velocity according to the voltage signal.